2SB1140T - описание и поиск аналогов

Ordering number 2069A PNP Epitaxial Planar Silicon Transistor 2SB1140 20V/5A Switching Applications Applications Package Dimensions Strobes, power supplies, relay drivers, lamp drivers. unit mm 2042A Features [2SB1140] Adoption of FBET, MBIT processes. Low saturation voltage. Large current cpacity. Short switching time. B Base C Collector E Emitter SANYO

Ordering number ENN2063A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1143/2SD1683 50V/4A Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit mm electrical equipment. 2042B [2SB1143/2SD1683] Features 8.0 4.0 3.3 Adoption of FBET, MBIT processes. 1.0 1.0 Low saturation voltage. Large current capacity and

Power Transistors 2SB1148, 2SB1148A Silicon PNP epitaxial planar type Unit mm For low-voltage switching 7.0 0.3 3.5 0.2 3.0 0.2 Complementary to 2SD1752 and 2SD1752A Features Low collector to emitter saturation voltage VCE(sat) 1.1 0.1 0.85 0.1 0.75 0.1 0.4 0.1 High-speed switching I type package enabling direct soldering of the radiating fin to the printed circuit bo

JMnic Product Specification Silicon PNP Power Transistors 2SB1145 DESCRIPTION With TO-220F package High DC current gain. DARLINGTON Low collector saturation voltage APPLICATIONS For high current driver and power driver applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta

JMnic Product Specification Silicon PNP Power Transistors 2SB1149 DESCRIPTION With TO-126 package DARLINGTON High DC current gain Low collector saturation voltage APPLICATIONS For use in operating from IC without predriver ,such as hammer driver PINNING(See Fig.2) PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum r

isc Silicon PNP Power Transistor 2SB1144 DESCRIPTION Collector Saturation Voltage Low V = -0.3V(Max)@I = -0.5A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1684 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for 100V/1.5A Switching Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME

isc Silicon PNP Darlingtion Power Transistor 2SB1145 DESCRIPTION High DC Current Gain- h = 2000(Min.)@I = -1.5A FE C Low Collector Saturation Voltage- V = -1.5V(Max)@I = -1.5A CE(sat) C Good Linearity of h FE With TO-220F package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current driver applications. Powe

isc Silicon PNP Darlingtion Power Transistor 2SB1149 DESCRIPTION High DC Current Gain- h = 2000(Min.)@I = -1.5A FE C Low Collector Saturation Voltage- V = -1.2V(Max)@I = -1.5A CE(sat) C Good Linearity of h FE With TO-126 package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Operate from Ic without predriver applicat