isc Silicon PNP Power Transistor 2SB1144DESCRIPTION Collector Saturation VoltageLow: V = -0.3V(Max)@I = -0.5ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1684Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for 100V/1.5A Switching ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

Ordering number:ENN2063APNP/NPN Epitaxial Planar Silicon Transistors2SB1143/2SD168350V/4A Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2042B[2SB1143/2SD1683]Features8.04.03.3 Adoption of FBET, MBIT processes. 1.0 1.0 Low saturation voltage. Large current capacity and

Ordering number:2069APNP Epitaxial Planar Silicon Transistor2SB114020V/5A Switching ApplicationsApplications Package Dimensions Strobes, power supplies, relay drivers, lamp drivers. unit:mm2042AFeatures [2SB1140] Adoption of FBET, MBIT processes. Low saturation voltage. Large current cpacity. Short switching time.B : BaseC : CollectorE : EmitterSANYO

Power Transistors2SB1148, 2SB1148ASilicon PNP epitaxial planar typeUnit: mmFor low-voltage switching 7.0 0.3 3.5 0.23.0 0.2Complementary to 2SD1752 and 2SD1752AFeaturesLow collector to emitter saturation voltage VCE(sat) 1.1 0.1 0.85 0.10.75 0.1 0.4 0.1High-speed switchingI type package enabling direct soldering of the radiating fin tothe printed circuit bo

JMnic Product Specification Silicon PNP Power Transistors 2SB1145 DESCRIPTION With TO-220F package High DC current gain. DARLINGTON Low collector saturation voltage APPLICATIONS For high current driver and power driver applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta

JMnic Product Specification Silicon PNP Power Transistors 2SB1149 DESCRIPTION With TO-126 package DARLINGTON High DC current gain Low collector saturation voltage APPLICATIONS For use in operating from IC without predriver ,such as hammer driver PINNING(See Fig.2) PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum r

isc Silicon PNP Darlingtion Power Transistor 2SB1145DESCRIPTIONHigh DC Current Gain-: h = 2000(Min.)@I = -1.5AFE CLow Collector Saturation Voltage-: V = -1.5V(Max)@I = -1.5ACE(sat) CGood Linearity of hFEWith TO-220F packageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current driver applications.Powe

isc Silicon PNP Darlingtion Power Transistor 2SB1149DESCRIPTIONHigh DC Current Gain-: h = 2000(Min.)@I = -1.5AFE CLow Collector Saturation Voltage-: V = -1.2V(Max)@I = -1.5ACE(sat) CGood Linearity of hFEWith TO-126 packageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSOperate from Ic without predriver applicat