Справочник транзисторов. 2SB1153

 

Биполярный транзистор 2SB1153 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SB1153
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 150 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 170 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 150 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 15 A
   Предельная температура PN-перехода (Tj): 175 °C
   Статический коэффициент передачи тока (hfe): 90
   Корпус транзистора: TO126

 Аналоги (замена) для 2SB1153

 

 

2SB1153 Datasheet (PDF)

 ..1. Size:219K  inchange semiconductor
2sb1153.pdf

2SB1153
2SB1153

isc Silicon PNP Power Transistor 2SB1153DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -170V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collec

 8.1. Size:146K  nec
2sb1150.pdf

2SB1153
2SB1153

 8.2. Size:150K  nec
2sb1151.pdf

2SB1153
2SB1153

 8.3. Size:61K  panasonic
2sb1154.pdf

2SB1153
2SB1153

Power Transistors2SB1154Silicon PNP epitaxial planar typeFor power switchingComplementary to 2SD1705 Unit: mmFeatures15.0 0.3 5.0 0.2Low collector to emitter saturation voltage VCE(sat)11.0 0.2 3.2Satisfactory linearity of foward current transfer ratio hFELarge collector current IC 3.2 0.1Full-pack package which can be installed to the heat sink withone screw

 8.4. Size:61K  panasonic
2sb1156.pdf

2SB1153
2SB1153

Power Transistors2SB1156Silicon PNP epitaxial planar typeFor power switchingComplementary to 2SD1707Unit: mmFeatures Low collector to emitter saturation voltage VCE(sat)15.0 0.3 5.0 0.211.0 0.2 3.2 Satisfactory linearity of foward current transfer ratio hFE Large collector current IC 3.2 0.1 Full-pack package which can be installed to the heat sink withone

 8.5. Size:61K  panasonic
2sb1155.pdf

2SB1153
2SB1153

Power Transistors2SB1155Silicon PNP epitaxial planar typeFor power switchingComplementary to 2SD1706 Unit: mmFeatures15.0 0.3 5.0 0.2Low collector to emitter saturation voltage VCE(sat)11.0 0.2 3.2Satisfactory linearity of foward current transfer ratio hFELarge collector current IC 3.2 0.1Full-pack package which can be installed to the heat sink withone screw

 8.6. Size:967K  utc
2sb1151.pdf

2SB1153
2SB1153

UNISONIC TECHNOLOGIES CO., LTD 2SB1151 PNP SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation *Complementary to 2SD1691 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SB1151L-x-AA3-R 2SB1151G-x-AA3-R SOT-223 E C B Tape Reel 2SB1151L-x-TA3-T 2SB1151G-x-TA3-T TO-220

 8.7. Size:165K  jmnic
2sb1157.pdf

2SB1153
2SB1153

JMnic Product Specification Silicon PNP Power Transistors 2SB1157 DESCRIPTION With TO-3PFa package Complement to type 2SD1712 High fT Wide area of safe operation APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-ba

 8.8. Size:159K  jmnic
2sb1159.pdf

2SB1153
2SB1153

JMnic Product Specification Silicon PNP Power Transistors 2SB1159 DESCRIPTION With TO-3PFa package Complement to type 2SD1714 High fT Wide area of safe operation APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-ba

 8.9. Size:206K  jmnic
2sb1154.pdf

2SB1153
2SB1153

JMnic Product Specification Silicon PNP Power Transistors 2SB1154 DESCRIPTION With TO-3PFa package Complement to type 2SD1705 Low collector saturation voltage Satisfactory linearity of hFE APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE U

 8.10. Size:162K  jmnic
2sb1158.pdf

2SB1153
2SB1153

JMnic Product Specification Silicon PNP Power Transistors 2SB1158 DESCRIPTION With TO-3PFa package Complement to type 2SD1713 High fT Wide area of safe operation APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-ba

 8.11. Size:218K  jmnic
2sb1151.pdf

2SB1153
2SB1153

JMnic Product Specification Silicon PNP Power Transistors 2SB1151 DESCRIPTION With TO-126 package Complement to type 2SD1691 Low saturation voltage Large current High total power dissipation:PT=1.3W Large current capability and wide SOA APPLICATIONS DC-DC converter Driver of solenoid or motor PINNING PIN DESCRIPTION1 Emitter Collector;connected to

 8.12. Size:162K  jmnic
2sb1156.pdf

2SB1153
2SB1153

JMnic Product Specification Silicon PNP Power Transistors 2SB1156 DESCRIPTION With TO-3PFa package Complement to type 2SD1707 Low collector saturation voltage Large collector current APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITV

 8.13. Size:197K  jmnic
2sb1155.pdf

2SB1153
2SB1153

JMnic Product Specification Silicon PNP Power Transistors 2SB1155 DESCRIPTION With TO-3PFa package Complement to type 2SD1706 Low collector saturation voltage Satisfactory linearity of hFE APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE U

 8.14. Size:349K  semtech
st2sb1151t.pdf

2SB1153

ST 2SB1151T PNP Epitaxial Silicon Power Transistor ECBTO-126 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 60 VCollector Emitter Voltage -VCEO 60 VEmitter Base Voltage -VEBO 7 VCollector Current (DC) -IC 5 ACollector Current (PW = 10 ms) -ICP 8 ABase Current -IB 1 A OCollector Power Dissipation (a

 8.15. Size:218K  inchange semiconductor
2sb1152.pdf

2SB1153
2SB1153

isc Silicon PNP Power Transistor 2SB1152DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -160V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collec

 8.16. Size:128K  inchange semiconductor
2sb1157.pdf

2SB1153
2SB1153

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1157 DESCRIPTION With TO-3PFa package Complement to type 2SD1712 High fT Wide area of safe operation APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT

 8.17. Size:221K  inchange semiconductor
2sb1159.pdf

2SB1153
2SB1153

isc Silicon PNP Power Transistor 2SB1159DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SD1714Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)

 8.18. Size:222K  inchange semiconductor
2sb1154.pdf

2SB1153
2SB1153

isc Silicon PNP Power Transistor 2SB1154DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage-: V = -0.5V(Max.)@ I = -6ACE(sat) CComplement to Type 2SD1705Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching application

 8.19. Size:221K  inchange semiconductor
2sb1158.pdf

2SB1153
2SB1153

isc Silicon PNP Power Transistor 2SB1158DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SD1713Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)

 8.20. Size:221K  inchange semiconductor
2sb1151.pdf

2SB1153
2SB1153

isc Silicon PNP Power Transistor 2SB1151DESCRIPTIONLarge Collector CurrentLow Collector Saturation VoltageHigh Power DissipationComplement to 2SD1691Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converter, or driver of solenoidor motor.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

 8.21. Size:128K  inchange semiconductor
2sb1156.pdf

2SB1153
2SB1153

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1156 DESCRIPTION With TO-3PFa package Complement to type 2SD1707 Low collector saturation voltage Large collector current APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITI

 8.22. Size:153K  inchange semiconductor
2sb1155.pdf

2SB1153
2SB1153

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1155 DESCRIPTION With TO-3PFa package Complement to type 2SD1706 Low collector saturation voltage Satisfactory linearity of hFE APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER C

Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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