2SB1166T - описание и поиск аналогов

Power Transistors 2SB1169, 2SB1169A Silicon PNP epitaxial planar type For power amplification Unit mm Features 7.0 0.3 3.5 0.2 3.0 0.2 0 to 0.15 High forward current transfer ratio hFE which has satisfactory linearity 2.0 0.2 Low collector-emitter saturation voltage VCE(sat) I type package enabling direct soldering of the radiating fin to the printed circu

JMnic Product Specification Silicon PNP Power Transistors 2SB1161 DESCRIPTION With TO-3PFa package Complement to type 2SD1716 High fT Wide area of safe operation APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-ba

JMnic Product Specification Silicon PNP Power Transistors 2SB1162 DESCRIPTION With TO-3PL package Complement to type 2SD1717 Excellent linearity of hFE Wide area of safe operation (ASO) High transition frequency fT APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified o

JMnic Product Specification Silicon PNP Power Transistors 2SB1163 DESCRIPTION With TO-3PL package Complement to type 2SD1718 Excellent linearity of hFE Wide area of safe operation (ASO) High transition frequency fT APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified o

JMnic Product Specification Silicon PNP Power Transistors 2SB1165 DESCRIPTION With TO-126 package Complement to type 2SD1722 Low collector saturation voltage Fast switching time APPLICATIONS For use in relay drivers,high-speed inverters,converters. PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings

JMnic Product Specification Silicon PNP Power Transistors 2SB1160 DESCRIPTION With TO-3PFa package Complement to type 2SD1715 High fT Satisfactory linearity of hFE Wide area of safe operation APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDIT

SMD Type Transistors PNP Transistors 2SB1169 TO-252 Unit mm 6.50+0.15 -0.15 +0.1 2.30 -0.1 5.30+0.2 0.50 -0.7 -0.2 +0.8 Features High forward current transfer ratio hFE which has satisfactory linearity Low collector-emitter saturation voltage VCE(sat) 0.127 0.80+0.1 max -0.1 2.3 0.60+ 0.1 1 Base - 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Max

SMD Type Transistors PNP Transistors 2SB1169A TO-252 Unit mm 6.50+0.15 -0.15 +0.1 2.30 -0.1 5.30+0.2 0.50 -0.7 -0.2 +0.8 Features High forward current transfer ratio hFE which has satisfactory linearity Low collector-emitter saturation voltage VCE(sat) 0.127 0.80+0.1 max -0.1 2.3 0.60+ 0.1 1 Base - 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Ma

isc Silicon PNP Power Transistor 2SB1161 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SD1716 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 )

isc Silicon PNP Power Transistor 2SB1168 DESCRIPTION Low Collector Saturation Voltage- V = -0.5V(Max)@I = -2A CE(sat) C High f T Good Linearity of h FE Fast switching time Complement to Type 2SD1725 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers,high-speed inverters and converters applicat

isc Silicon PNP Power Transistor 2SB1162 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SD1717 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 )

isc Silicon PNP Power Transistor 2SB1163 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -180V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SD1718 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 )

isc Silicon PNP Power Transistor 2SB1165 DESCRIPTION Low Collector Saturation Voltage- V = -0.55V(Max)@I = -3A CE(sat) C High f T Good Linearity of h FE Fast switching time Complement to Type 2SD1722 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers,high-speed inverters and converters applica

isc Silicon PNP Power Transistor 2SB1160 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SD1715 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 )