Справочник транзисторов. 2SB1172

 

Биполярный транзистор 2SB1172 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SB1172
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 15 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 3 A
   Предельная температура PN-перехода (Tj): 175 °C
   Статический коэффициент передачи тока (hfe): 90
   Корпус транзистора: TO218

 Аналоги (замена) для 2SB1172

 

 

2SB1172 Datasheet (PDF)

 ..1. Size:84K  panasonic
2sb1172.pdf

2SB1172
2SB1172

Power Transistors2SB1172, 2SB1172ASilicon PNP epitaxial planar typeFor low-frequency power amplificationUnit: mmComplementary to 2SD1742, 2SD742A7.00.33.50.23.00.2 0 to 0.15 Features2.00.2 High forward current transfer ratio hFE which has satisfactory linearity Low collector-emitter saturation voltage VCE(sat) I type package enabling direct sold

 ..2. Size:1193K  kexin
2sb1172.pdf

2SB1172
2SB1172

SMD Type TransistorsPNP Transistors2SB1172TO-252 Unit: mm Features6.50+0.15-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 High forward current transfer ratio hFE which has satisfactory linearity Low collector-emitter saturation voltage VCE(sat)0.127 Complementary to 2SD17420.80+0.1 max-0.12.3 0.60+ 0.1 1 Base- 0.1+0.154.60 -0.152 Collec

 0.1. Size:1187K  kexin
2sb1172a.pdf

2SB1172
2SB1172

SMD Type TransistorsPNP Transistors2SB1172ATO-252 Unit: mm Features6.50+0.15-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 High forward current transfer ratio hFE which has satisfactory linearity Low collector-emitter saturation voltage VCE(sat)0.127 Complementary to 2SD1742A0.80+0.1 max-0.12.3 0.60+ 0.1 1 Base- 0.1+0.154.60 -0.152 Coll

 8.1. Size:76K  panasonic
2sb1173.pdf

2SB1172

 8.2. Size:94K  panasonic
2sb1176.pdf

2SB1172
2SB1172

Power Transistors2SB1176Silicon PNP epitaxial planar typeFor voltage switchingUnit: mmComplementary to 2SD17467.00.33.50.23.00.2 0 to 0.152.00.2 Features Low collector-emitter saturation voltage VCE(sat) Satisfactory linearity of forward current transfer ratio hFE Large collector current IC I type package enabling direct soldering of the ra

 8.3. Size:94K  panasonic
2sb1174.pdf

2SB1172
2SB1172

Power Transistors2SB1174Silicon PNP epitaxial planar typeFor voltage switchingUnit: mm7.00.33.50.23.00.2 0 to 0.15 Features2.00.2 Low collector-emitter saturation voltage VCE(sat) Satisfactory linearity of forward current transfer ratio hFE Large collector current IC I type package enabling direct soldering of the radiating fin to theprinte

 8.4. Size:95K  panasonic
2sb1175.pdf

2SB1172
2SB1172

Power Transistors2SB1175Silicon PNP epitaxial planar typeFor voltage switchingUnit: mmComplementary to 2SD17457.00.33.50.23.00.2 0 to 0.152.00.2 Features Low collector-emitter saturation voltage VCE(sat) Satisfactory linearity of forward current transfer ratio hFE Large collector current IC I type package enabling direct soldering of the ra

 8.5. Size:52K  no
2sb1179.pdf

2SB1172

 8.6. Size:1224K  kexin
2sb1176.pdf

2SB1172
2SB1172

SMD Type TransistorsPNP Transistors2SB1176TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.2 Features 5.30-0.2 +0.80.50 -0.7 Satisfactory linearity of forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat) Large collector current IC0.127+0.10.80-0.1max Complementary to 2SD1746+ 0.11 Base2.3 0.60- 0.1+0.15

 8.7. Size:1207K  kexin
2sb1174.pdf

2SB1172
2SB1172

SMD Type TransistorsPNP Transistors2SB1174TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Satisfactory linearity of forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat) Large collector current IC 0.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emi

 8.8. Size:1214K  kexin
2sb1175.pdf

2SB1172
2SB1172

SMD Type TransistorsPNP Transistors2SB1175TO-252Unit: mm+0.156.50-0.15+0.1 Features 2.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Satisfactory linearity of forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat) Large collector current IC0.127 Complementary to 2SD1745+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.15

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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