Биполярный транзистор 2SB1172 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SB1172
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 175 °C
Статический коэффициент передачи тока (hfe): 90
Корпус транзистора: TO218
2SB1172 Datasheet (PDF)
2sb1172.pdf
Power Transistors2SB1172, 2SB1172ASilicon PNP epitaxial planar typeFor low-frequency power amplificationUnit: mmComplementary to 2SD1742, 2SD742A7.00.33.50.23.00.2 0 to 0.15 Features2.00.2 High forward current transfer ratio hFE which has satisfactory linearity Low collector-emitter saturation voltage VCE(sat) I type package enabling direct sold
2sb1172.pdf
SMD Type TransistorsPNP Transistors2SB1172TO-252 Unit: mm Features6.50+0.15-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 High forward current transfer ratio hFE which has satisfactory linearity Low collector-emitter saturation voltage VCE(sat)0.127 Complementary to 2SD17420.80+0.1 max-0.12.3 0.60+ 0.1 1 Base- 0.1+0.154.60 -0.152 Collec
2sb1172a.pdf
SMD Type TransistorsPNP Transistors2SB1172ATO-252 Unit: mm Features6.50+0.15-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 High forward current transfer ratio hFE which has satisfactory linearity Low collector-emitter saturation voltage VCE(sat)0.127 Complementary to 2SD1742A0.80+0.1 max-0.12.3 0.60+ 0.1 1 Base- 0.1+0.154.60 -0.152 Coll
2sb1176.pdf
Power Transistors2SB1176Silicon PNP epitaxial planar typeFor voltage switchingUnit: mmComplementary to 2SD17467.00.33.50.23.00.2 0 to 0.152.00.2 Features Low collector-emitter saturation voltage VCE(sat) Satisfactory linearity of forward current transfer ratio hFE Large collector current IC I type package enabling direct soldering of the ra
2sb1174.pdf
Power Transistors2SB1174Silicon PNP epitaxial planar typeFor voltage switchingUnit: mm7.00.33.50.23.00.2 0 to 0.15 Features2.00.2 Low collector-emitter saturation voltage VCE(sat) Satisfactory linearity of forward current transfer ratio hFE Large collector current IC I type package enabling direct soldering of the radiating fin to theprinte
2sb1175.pdf
Power Transistors2SB1175Silicon PNP epitaxial planar typeFor voltage switchingUnit: mmComplementary to 2SD17457.00.33.50.23.00.2 0 to 0.152.00.2 Features Low collector-emitter saturation voltage VCE(sat) Satisfactory linearity of forward current transfer ratio hFE Large collector current IC I type package enabling direct soldering of the ra
2sb1176.pdf
SMD Type TransistorsPNP Transistors2SB1176TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.2 Features 5.30-0.2 +0.80.50 -0.7 Satisfactory linearity of forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat) Large collector current IC0.127+0.10.80-0.1max Complementary to 2SD1746+ 0.11 Base2.3 0.60- 0.1+0.15
2sb1174.pdf
SMD Type TransistorsPNP Transistors2SB1174TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Satisfactory linearity of forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat) Large collector current IC 0.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emi
2sb1175.pdf
SMD Type TransistorsPNP Transistors2SB1175TO-252Unit: mm+0.156.50-0.15+0.1 Features 2.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Satisfactory linearity of forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat) Large collector current IC0.127 Complementary to 2SD1745+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.15
Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP31C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
