Power Transistors2SB1180, 2SB1180ASilicon PNP epitaxial planar type darlingtonUnit: mmFor medium-speed voltage switching7.00.33.50.2Complementary to 2SD1750, 2SD1750A 3.00.2 0 to 0.152.00.2 Features High forward current transfer ratio hFE I type package enabling direct soldering of the radiating fin to theprinted circuit board, etc. of small electron

2SB1189 / 2SB1238 / 2SB899FTransistorsTransistors2SD1767 / 2SD1859 / 2SD1200F(96-618-B13)(96-750-D13)278

Power Transistor (80V, 1A) 2SB1260 / 2SB1181 / 2SB1241 Features Dimensions (Unit : mm) 1) Hight breakdown voltage and high current. 2SB1260 2SB1181BVCEO=80V, IC = 1A 2.3+0.26.50.22) Good hFE linearty. C0.55.1+0.23) Low VCE(sat). 0.50.14.5+0.21.5Complements the 2SD1898 / 2SD1863 / 2SD1733. 1.60.10.650.1 0.75(1) (2) (3)0.90

Medium power transistor (32V, 2A) 2SB1188 / 2SB1182 / 2SB1240 Features Dimensions (Unit : mm) 1) Low VCE(sat). 2SB1188 2SB1182VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2.3+0.26.50.2-0.14.5+0.2-0.1 C0.52) Complements the 2SD1766 / 2SD1758 / 2SD1862. +0.2 5.1+0.21.5-0.1 -0.1 0.50.11.60.10.650.10.75(1) (2) (3)+0.1Structure 0.4-

2SB1184 / 2SB1243TransistorsPower Transistor (-60V, -3A)2SB1184 / 2SB1243 Features External dimensions (Units : mm)1) Low VCE(sat).2SB1184 2SB1243 VCE(sat) = -0.5V (Typ.)2.50.26.80.22.3 +0.26.50.2 -0.1 (IC/IB = -2A / -0.2A)C0.55.1 +0.2 -0.1 0.50.12) Complements the 2SD1760 / 2SD1864.0.65Max.0.650.10.750.90.550.10.50.1 Structure2.3

Medium power transistor(80V, 0.7A) 2SB1189 / 2SB1238 Features Dimensions (Unit : mm) 1) High breakdown voltage, BVCEO=80V, and 2SB1189high current, IC=0.7A. 4.02) Complements the 2SD1767 / 2SD1859. 1.0 2.5 0.5 (1)(2)Absolute maximum ratings (Ta=25C) (3)Parameter Symbol Limits UnitCollector-base voltage VCBO -80 VCollector-emitter voltage VCE

2SB1183 / 2SB1239TransistorsPower transistor (-40V, -2A)2SB1183 / 2SB1239 External dimensions (Units : mm) Features1) Darlington connection for high DC current gain.2SB11832) Built-in 4k resistor between base and emitter.5.5 1.53) Complements the 2SD1759 / 2SD1861.0.9C0.5 Equivalent circuit0.8Min.1.5C2.59.5BROHM : CPT3 (1) Base(Gate)RBE 4k(2) Co

2SB1183 / 2SB1239 / 2SB786FTransistorsTransistors2SD1759 / 2SD1861 / 2SD947F(96-126-B23)(94S-321-D23)283

2SB1260 / 2SB1181Datasheet PNP -1.0A -80V Middle Power TransistorlOutlineCollector MPT3 CPT3Parameter ValueVCEO-80VBase Collector IC-1.0AEmitter Base Emitter 2SB1260 2SB1181 lFeatures(SC-62) (SC-63) 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD1898 / 2SD17333) Low VCE(sat)VCE(sat)= -0.4V Max. (IC/IB= -500mA/

TransistorsMedium power Transistor(*32V,*2A)2SB1188 / 2SB1182 / 2SB1240 /2SB822 / 2SB1277 / 2SB911MFFeatures FExternal dimensions (Unit: mm)1) Low VCE(sat).VCE(sat) = *0.5V (Typ.)(IC / IB = *2A / *0.2A)2) Complements the 2SD1766 /2SD1758 / 2SD1862 / 2SD1189F /2SD1055 / 2SD1919 / SD1227M.FStructureEpitaxial planar typePNP silicon transistor(96-131-B24)2152SB1188

2SB1275 / 2SB1236A / 2SB1569A / 2SB1186ATransistorsTransistors2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A(96-612-A58)(96-744-C58)277

Power Transistor (-60V, -3A) 2SB1184 / 2SB1243 Features Dimensions (Unit : mm) 1) Low VCE(sat). 2SB1184 2SB1243VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) 2.50.26.80.22.3 +0.26.50.2 -0.1C0.52) Complements the 2SD1760 / 2SD1864. 5.1 +0.2 -0.1 0.50.1Structure 0.65Max.0.650.10.75Epitaxial planar type 0.9PNP silicon transistor 0.550

TransistorsPower Transistor (*60V, *3A)2SB1184 / 2SB1243 / 2SB1185FFeatures FExternal dimensions (Units: mm)1) Low VCE(sat).VCE(sat) = *0.5V (Typ.)(IC / IB = *2A / *0.2A)2) Complements the 2SD1760 /2SD1864 / 2SD1762.FStructureEpitaxial planar typePNP silicon transistor(96-128-B57)223Transistors 2SB1184 / 2SB1243 / 2SB1185FAbsolute maximum ratings (Ta = 25_C)FEle

Medium power transistor (32V, 2A) 2SB1182 / 2SB1240 Features Dimensions (Unit : mm) 1) Low VCE(sat). 2SB1182 2SB1240VCE(sat) = 0.5V (Typ.) 2.50.26.80.2(IC/IB = 2A / 0.2A) 2.3+0.26.50.2-0.1C0.52) Complements 2SD1758 / 2SD1862. 5.1+0.2-0.1 0.50.10.65Max.0.650.1Structure 0.750.90.50.1Epitaxial planar type 0.550.1PN

UNISONIC TECHNOLOGIES CO., LTD 2SB1188 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB1188 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 FEATURES SOT-89*High current output up to 3A *Low saturation voltage ORDERING INFORMATION Pin Assignment Orderi

UNISONIC TECHNOLOGIES CO., LTD 2SB1182 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR 1TO-252 DESCRIPTION The UTC 2SB1182 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage ORDERING INFORMATION Ordering Number Pin Assignm

2SB1188 -2A, -40V PNP Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 DESCRIPTION The 2SB1188 is designed for medium poweramplifier applications. 4123AFEATURES EC Low collector saturation voltage : VCE(sat)=-0.5V(Typ.) RoHS Compliant Product B DF GCLASSIFICATION

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1189 TRANSISTOR (PNP) 1. BASE FEATURES High breakdown voltage 2. COLLECTOR 1 Complements to 2SD1767 2 3. EMITTER 3 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO -80 VCollector-Base Voltage VCEO Collector-Emitter Volta

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors TO-252-2L2SB1184 TRANSISTOR (PNP) FEATURES Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) 1. BASE Complements the 2SD1760 / 2SD1864. 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value UnitVCBO Collector Base Voltage -

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors TO-220-3L 2SB1185 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR Low Collector Saturation Voltage Complement to Type 2SD1762 3. EMITTER APPLICATIONS For Use in Low Frequency Power Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter V

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1188 TRANSISTOR (PNP) SOT-89-3L 1. BASE FEATURES Low VCE(sat). 2. COLLECTOR 1 Complements the 2SD1766 2 3. EMITTER 3 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO -40 VCollector-Base Voltage VCEO -32 VCollector-Emitter Voltage V

JMnic Product Specification Silicon PNP Power Transistors 2SB1187 DESCRIPTION With TO-220Fa package Low saturation voltage Complement to type 2SD1761 Excellent DC current gain characteristics Wide safe operating area APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings

JMnic Product Specification Silicon PNP Power Transistors 2SB1186A DESCRIPTION With TO-220Fa package Low collector saturation votlage Complement to type 2SD1763A High breakdown voltage APPLICATIONS For use in low frequency power amplifer applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER

JMnic Product Specification Silicon PNP Power Transistors 2SB1185 DESCRIPTION With TO-220Fa package Low collector saturation votlage Complement to type 2SD1762 APPLICATIONS For use in low frequency power amplifer applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO C

JMnic Product Specification Silicon PNP Power Transistors 2SB1186 DESCRIPTION With TO-220Fa package Low collector saturation votlage Complement to type 2SD1763 High breakdown voltage APPLICATIONS For use in low frequency power amplifer applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CO

2SB1 1 8 9TRANSISTOR(PNP)FEATURES High breakdown voltage Complements to 2SD1767 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO -80 VCollector-Base Voltage VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.7 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150

2SB1 1 8 8 TRANSISTOR(PNP) SOT-89 1. BASE FEATURES 1 Low VCE(sat). 2. COLLECTOR Complements the 2SD1766 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO -40 VCollector-Base Voltage VCEO -32 VCollector-Emitter Voltage VEBO -5 VEmitter-Base Voltage Collector Current -Continuous IC -2 ACollector Power Dissip

2SB1188 SOT-89 Transistor(PNP)1. BASE SOT-892. COLLECTOR 1 4.6B4.41.62 1.83. EMITTER 1.41.43 2.64.252.43.75Features 0.8MIN0.53 Low VCE(sat).0.400.480.442x)0.13 B0.35 0.37 Complements the 2SD1766 1.53.0Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCB

2SB1184(PNP)TO-251/TO-252-2L Transistor TO-2511. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) Complements the 2SD1760 / 2SD1864. MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2LSymbol Parameter Value UnitsVCBO Collector Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Ba

2SB1189 SOT-89 Transistor(PNP)1. BASE SOT-892. COLLECTOR 1 4.6B4.41.61.82 1.41.43. EMITTER 3 2.64.252.43.75Features 0.8MIN High breakdown voltage 0.530.400.480.442x)0.13 B0.35 Complements to 2SD1767 0.371.53.0Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value

2SB1182(PNP)TO-251/TO-252-2L TransistorTO-2511.BASE 2.COLLECTOR 3EMITTER 1 2 3 Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2LSymbol Parameter Value UnitsVCBO Collector- Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -2 A PC Collector Power Dissipat

2SB1184PNP PLASTIC ENCAPSULATE TRANSISTORSP bP b Lead(Pb)-FreeFeatures:1.BASE1.BASE2.COLLECTOR2.COLLECTOR* Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A)).3.EMITTER3.EMITTERTO-251MAXIMUM RATINGS (TA=25C unless otherwise noted) TO-251Symbol ValueParameter UnitCollector-Base VoltageV -60VCBOV-50 VCollector-Emitter Voltage CEOVEmitte

2SB1188KPNP Silicon Medium Power TransistorsSOT-89P b Lead(Pb)-Free121. BASE32. COLLECTOR3. EMITTERABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise specified)Unit Parameter Symbol Ratings Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -2 A Collector Power Dissipation PD

2SB1188Epitaxial Planar PNP TransistorsSOT-89121. BASE32. COLLECTOR3. EMITTER%CABSOLUTE MAXIMUM RATINGS (Ta=25 )Rating SymbolLimits UnitCollector-Base VoltageVdcVCBO -40Collector-Emitter VoltageVdcVCEO -32Emitter-Base VoltageVdcVEBO -5ICA(DC)-2Collector CurrentICP-3 A (Pulse)*PC WCollector Power Dissipation 0.5%T ,Tstg CJunctio

2SB1182PNP PLASTIC ENCAPSULATE TRANSISTORSP b Lead(Pb)-Free1.BASE32.COLLECTOR23.EMITTER 1D-PAK(TO-252)ABSOLUTE MAXIMUM RATINGS (TA=25C)Rating Symbol Limits UnitVCBO VCollector-Base Voltage-40VCEOVCollector-Emitter Voltage -32VEBOVEmitter-Base Voltage -5.0Collector CurrentIC A-2.0Collector Power Dissipation PD 1.5 WJunction TemperatureTj+150

2SB1188SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES Low VCE(sat).VCE(sat) = -0.5V (Typ.)(IC/IB = -2A / -0.2A) SOT-89 Complements the 2SD1766 Weight: 0.05 gRoHS product for packing code suffix "G" 1. BASE Halogen free product for packing code suffix "H"MAXIMUM RATINGS (TA=25 unless otherwise noted) 1 2. COLLECTOR Symbol Parameter Value U

2SB1185 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-220F PNP Silicon PNP transistor in a TO-220F Plastic Package. / Features V 2SD1762 CE(sat)Low VCE(sat),complementary pair with 2SD1762. / Applications Power amplifier applications. / Equivalent Circu

2SB1182 Rev.E May.-2016 DATA SHEET / Descriptions TO-252 PNP Silicon PNP transistor in a TO-252 Plastic Package. / Features , 2SD1758 Low VCE(sat),complements the 2SD1758. / Applications Medium power amplifier applications. / Equivalent Circuit

ST 2SB1188U PNP Silicon Epitaxial Planar Transistor Medium power transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 32 VEmitter Base Voltage -VEBO 5 VCollector Current - DC -IC 2 A Collector Current - Pulse 1) -ICP 3 1) A 0.5 PC W Collector Power Dissipation2 2) Junction Temper

SMD Type TransistorsPNP Transistors2SB11891.70 0.1 Features High breakdown voltage, BVCEO=-80V,and High Current, IC=-0.7A Complementary to 2SD17670.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage VCEO -80 V Emitter - Base Voltage

SMD Type TransistorsPower transistor2SB1184TO-252Unit: mmFeatures+0.15 +0.16.50-0.15 2.30-0.1+0.2 +0.85.30-0.2 0.50-0.7Low VCE(sat).PNP silicon transistor.Epitaxial planar type0.127+0.1 max0.80-0.1+0.12.3 0.60-0.11 Base+0.154.60-0.152 Collector3 EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -60 V

SMD Type TransistorsPNP Transistors2SB1181TO-252Unit: mm+0.156.50-0.15+0.1 Features2.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Hight breakdown voltage and high current. Low collector-emitter saturation voltage VCE(sat) Good hFE linearty.0.127 Complementary to 2SD1733+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector

SMD Type TransistorsPNP Transistors2SB1184TO-252Unit: mm+0.156.50-0.15 Features +0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Low VCE(sat).VCE(sat) = -0.5V Complementary to 2SD17600.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

SMD Type TransistorsMedium Power Transistor2SB1182TO-252Unit: mmFeatures+0.15 +0.16.50-0.15 2.30-0.1+0.2 +0.85.30-0.2 0.50-0.7Low VCE(sat).Epitaxial planar typePNP silicon transistor0.127+0.1 max0.80-0.1+0.12.3 0.60-0.11 Base+0.154.60-0.152 Collector3 EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO

SMD Type TransistorsSMD TypePNP Transistor2SB11881.70 0.1FeaturesLow VCE(sat).VCE(sat) = -0.5V (Typ.)(IC/IB = -2A / -0.2A)0.42 0.10.46 0.11.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base Voltage VCBO -40 VCollector-emitter Voltage VCEO -32 VEmitter-base Voltage VEBO -5 VIC -2 ACollector currentICP * -3

SMD Type TransistorsPNP Transistors2SB1182TO-252Unit: mm+0.156.50-0.15+0.1 Features2.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Low VCE(sat).VCE(sat) = -0.5V Complementary to 2SD17580.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

CHENMKO ENTERPRISE CO.,LTD2SB1182GPSMALL FLAT PNP Epitaxial Transistor VOLTAGE 32 Volts CURRENT 2 AmpereAPPLICATION* Power driver and Dc to DC convertor .FEATURE* Small flat package. (DPAK)DPAK* PC= 1.5 W (mounted on ceramic substrate).* High saturation current capability..094 (2.38)CONSTRUCTION.086 (2.19).022 (0.55)* PNP Switching Transistor.018 (0.45)(1) (3

CHENMKO ENTERPRISE CO.,LTD2SB1188GPSURFACE MOUNT PNP Medium Power TransistorVOLTAGE 32 Volts CURRENT 2 AmpereAPPLICATION* Power driver and Dc to DC convertor .FEATURESC-62/SOT-89* Small flat package. (SC-62/SOT-89)* Low saturation voltage VCE(sat)=-0.5V(typ.)(IC/IB=-2A/-0.2A) CONSTRUCTION 4.6MAX. 1.6MAX.1.7MAX. 0.4+0.05* PNP Switching TransistorMARKING* HFE(P):NO +

2SB1184(3CA1184) PNP /SILICON PNP TRANSISTOR : Purpose: Power amplifier applications :, 2SD1760(3DA1760) Features: Low V complements the 2SD1760(3DA1760). CE(sat),/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -60 V CBO V -50 V CEO

2SB1185(3CA1185) PNP /SILICON PNP TRANSISTOR :/Purpose: Power amplifier applications. :V 2SD1762(3DA1762) CE(sat)Features: Low V ,complementary pair with 2SD1762(3DA1762). CE(sat)/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -60 V CBO V -50 V CEO

2SB1188SMD Ty p e PNP TransistorsFeaturesLow VCE(sat).VCE(sat) = -0.5V (Typ.)(IC/IB = -2A / -0.2A)321 1.Base2.Collector3.Emitter Simplified outline(SOT-89)Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base Voltage VCBO -40 VCollector-emitter Voltage VCEO -32 VEmitter-base Voltage VEBO -5 VIC -2 ACollector currentICP * -3 AColl

2SB1188SQ PNP Transistor SOT-89Features Low collector saturation voltage Excellent h characteristicsFE 1. Base 2. Collector 3.EmitterMarking: 1188-P1188-Q 1188-RAbsolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 32 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 2 A Colle

2SB1188PNP-Silicon General use Transistors1W 1.5A25V ApplicationsCan be used for switching and amplifying in various 4 electrical and electronic circuit. 32 1 2 1 3Maximum ratings SOT-89 Parameters Symbol Rating Unit1 Base 2 Collector 3 EmitterV VCEO 25Collector-emitter voltage (IB=0) VCBO 40 VCollector-base voltageIE=0 VEBO 6 VEmitter-b

isc Silicon PNP Power Transistor 2SB1187DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min.)(BR)CEOWide Area of Safe OperationComplement to Type 2SD1761Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB1184DESCRIPTIONLow VCE(sat)Small and slim packageComplements the 2SD1760/2SD1864100% testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower dissipationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -60 VCB

isc Silicon PNP Power Transistor 2SB1186ADESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -160V(Min.)(BR)CEOGood Linearity of hFEComplement to Type 2SD1763AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon PNP Power Transistor 2SB1185DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min.)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage-: V = -1.0V(Max.)@ I = -2ACE(sat) CComplement to Type 2SD1762Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB1186DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOGood Linearity of hFEComplement to Type 2SD1763Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplifier applications.ABSOLUTE MAXIM

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB1182DESCRIPTIONSmall and slim package100% testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower dissipationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -40 VCBOV Collector-Emitter Voltage -32 VCEOV Emitter-