2SB1184 - описание и поиск аналогов

Power Transistor (-60V, -3A) 2SB1184 / 2SB1243 Features Dimensions (Unit mm) 1) Low VCE(sat). 2SB1184 2SB1243 VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) 2.5 0.2 6.8 0.2 2.3 +0.2 6.5 0.2 -0.1 C0.5 2) Complements the 2SD1760 / 2SD1864. 5.1 +0.2 -0.1 0.5 0.1 Structure 0.65Max. 0.65 0.1 0.75 Epitaxial planar type 0.9 PNP silicon transistor 0.55 0

Transistors Power Transistor (*60V, *3A) 2SB1184 / 2SB1243 / 2SB1185 FFeatures FExternal dimensions (Units mm) 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1760 / 2SD1864 / 2SD1762. FStructure Epitaxial planar type PNP silicon transistor (96-128-B57) 223 Transistors 2SB1184 / 2SB1243 / 2SB1185 FAbsolute maximum ratings (Ta = 25_C) FEle

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors TO-252-2L 2SB1184 TRANSISTOR (PNP) FEATURES Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) 1. BASE Complements the 2SD1760 / 2SD1864. 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value Unit VCBO Collector Base Voltage -

2SB1184(PNP) TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) Complements the 2SD1760 / 2SD1864. MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO Collector Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Ba

2SB1184 PNP PLASTIC ENCAPSULATE TRANSISTORS P b P b Lead(Pb)-Free Features 1.BASE 1.BASE 2.COLLECTOR 2.COLLECTOR * Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) ). 3.EMITTER 3.EMITTER TO-251 MAXIMUM RATINGS (TA=25 C unless otherwise noted) TO-251 Symbol Value Parameter Unit Collector-Base Voltage V -60 V CBO V -50 V Collector-Emitter Voltage CEO V Emitte

SMD Type Transistors PNP Transistors 2SB1184 TO-252 Unit mm +0.15 6.50-0.15 Features +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Low VCE(sat).VCE(sat) = -0.5V Complementary to 2SD1760 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector

2SB1184(3CA1184) PNP /SILICON PNP TRANSISTOR Purpose Power amplifier applications , 2SD1760(3DA1760) Features Low V complements the 2SD1760(3DA1760). CE(sat), /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -60 V CBO V -50 V CEO

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1184 DESCRIPTION Low V CE(sat) Small and slim package Complements the 2SD1760/2SD1864 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power dissipation ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -60 V CB

SMD Type Transistors Power transistor 2SB1184 TO-252 Unit mm Features +0.15 +0.1 6.50-0.15 2.30-0.1 +0.2 +0.8 5.30-0.2 0.50-0.7 Low VCE(sat). PNP silicon transistor. Epitaxial planar type 0.127 +0.1 max 0.80-0.1 +0.1 2.3 0.60-0.1 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V

2SB1189 / 2SB1238 / 2SB899F Transistors Transistors 2SD1767 / 2SD1859 / 2SD1200F (96-618-B13) (96-750-D13) 278

Power Transistor ( 80V, 1A) 2SB1260 / 2SB1181 / 2SB1241 Features Dimensions (Unit mm) 1) Hight breakdown voltage and high current. 2SB1260 2SB1181 BVCEO= 80V, IC = 1A 2.3+0.2 6.5 0.2 2) Good hFE linearty. C0.5 5.1+0.2 3) Low VCE(sat). 0.5 0.1 4.5+0.2 1.5 Complements the 2SD1898 / 2SD1863 / 2SD1733. 1.6 0.1 0.65 0.1 0.75 (1) (2) (3) 0.9 0

Medium power transistor ( 32V, 2A) 2SB1188 / 2SB1182 / 2SB1240 Features Dimensions (Unit mm) 1) Low VCE(sat). 2SB1188 2SB1182 VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2.3+0.2 6.5 0.2 -0.1 4.5+0.2 -0.1 C0.5 2) Complements the 2SD1766 / 2SD1758 / 2SD1862. +0.2 5.1+0.2 1.5-0.1 -0.1 0.5 0.1 1.6 0.1 0.65 0.1 0.75 (1) (2) (3) +0.1 Structure 0.4-

Medium power transistor( 80V, 0.7A) 2SB1189 / 2SB1238 Features Dimensions (Unit mm) 1) High breakdown voltage, BVCEO= 80V, and 2SB1189 high current, IC= 0.7A. 4.0 2) Complements the 2SD1767 / 2SD1859. 1.0 2.5 0.5 (1) (2) Absolute maximum ratings (Ta=25 C) (3) Parameter Symbol Limits Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCE

2SB1183 / 2SB1239 Transistors Power transistor (-40V, -2A) 2SB1183 / 2SB1239 External dimensions (Units mm) Features 1) Darlington connection for high DC current gain. 2SB1183 2) Built-in 4k resistor between base and emitter. 5.5 1.5 3) Complements the 2SD1759 / 2SD1861. 0.9 C0.5 Equivalent circuit 0.8Min. 1.5 C 2.5 9.5 B ROHM CPT3 (1) Base(Gate) RBE 4k (2) Co

2SB1183 / 2SB1239 / 2SB786F Transistors Transistors 2SD1759 / 2SD1861 / 2SD947F (96-126-B23) (94S-321-D23) 283

2SB1260 / 2SB1181 Datasheet PNP -1.0A -80V Middle Power Transistor lOutline Collector MPT3 CPT3 Parameter Value VCEO -80V Base Collector IC -1.0A Emitter Base Emitter 2SB1260 2SB1181 lFeatures (SC-62) (SC-63) 1) Suitable for Middle Power Driver 2) Complementary NPN Types 2SD1898 / 2SD1733 3) Low VCE(sat) VCE(sat)= -0.4V Max. (IC/IB= -500mA/

Transistors Medium power Transistor(*32V,*2A) 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FFeatures FExternal dimensions (Unit mm) 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M. FStructure Epitaxial planar type PNP silicon transistor (96-131-B24) 215 2SB1188

2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A Transistors Transistors 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A (96-612-A58) (96-744-C58) 277

Medium power transistor ( 32V, 2A) 2SB1182 / 2SB1240 Features Dimensions (Unit mm) 1) Low VCE(sat). 2SB1182 2SB1240 VCE(sat) = 0.5V (Typ.) 2.5 0.2 6.8 0.2 (IC/IB = 2A / 0.2A) 2.3+0.2 6.5 0.2 -0.1 C0.5 2) Complements 2SD1758 / 2SD1862. 5.1+0.2 -0.1 0.5 0.1 0.65Max. 0.65 0.1 Structure 0.75 0.9 0.5 0.1 Epitaxial planar type 0.55 0.1 PN

Power Transistors 2SB1180, 2SB1180A Silicon PNP epitaxial planar type darlington Unit mm For medium-speed voltage switching 7.0 0.3 3.5 0.2 Complementary to 2SD1750, 2SD1750A 3.0 0.2 0 to 0.15 2.0 0.2 Features High forward current transfer ratio hFE I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electron

UNISONIC TECHNOLOGIES CO., LTD 2SB1188 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB1188 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 FEATURES SOT-89 *High current output up to 3A *Low saturation voltage ORDERING INFORMATION Pin Assignment Orderi

UNISONIC TECHNOLOGIES CO., LTD 2SB1182 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR 1 TO-252 DESCRIPTION The UTC 2SB1182 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage ORDERING INFORMATION Ordering Number Pin Assignm

2SB1188 -2A, -40V PNP Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 DESCRIPTION The 2SB1188 is designed for medium poweramplifier applications. 4 1 2 3 A FEATURES E C Low collector saturation voltage VCE(sat)=-0.5V(Typ.) RoHS Compliant Product B D F G CLASSIFICATION

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1189 TRANSISTOR (PNP) 1. BASE FEATURES High breakdown voltage 2. COLLECTOR 1 Complements to 2SD1767 2 3. EMITTER 3 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO -80 V Collector-Base Voltage VCEO Collector-Emitter Volta

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors TO-220-3L 2SB1185 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR Low Collector Saturation Voltage Complement to Type 2SD1762 3. EMITTER APPLICATIONS For Use in Low Frequency Power Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter V

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1188 TRANSISTOR (PNP) SOT-89-3L 1. BASE FEATURES Low VCE(sat). 2. COLLECTOR 1 Complements the 2SD1766 2 3. EMITTER 3 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO -40 V Collector-Base Voltage VCEO -32 V Collector-Emitter Voltage V

JMnic Product Specification Silicon PNP Power Transistors 2SB1187 DESCRIPTION With TO-220Fa package Low saturation voltage Complement to type 2SD1761 Excellent DC current gain characteristics Wide safe operating area APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings

JMnic Product Specification Silicon PNP Power Transistors 2SB1186A DESCRIPTION With TO-220Fa package Low collector saturation votlage Complement to type 2SD1763A High breakdown voltage APPLICATIONS For use in low frequency power amplifer applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER

JMnic Product Specification Silicon PNP Power Transistors 2SB1185 DESCRIPTION With TO-220Fa package Low collector saturation votlage Complement to type 2SD1762 APPLICATIONS For use in low frequency power amplifer applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO C

JMnic Product Specification Silicon PNP Power Transistors 2SB1186 DESCRIPTION With TO-220Fa package Low collector saturation votlage Complement to type 2SD1763 High breakdown voltage APPLICATIONS For use in low frequency power amplifer applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CO

2SB1 1 8 9 TRANSISTOR(PNP) FEATURES High breakdown voltage Complements to 2SD1767 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO -80 V Collector-Base Voltage VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.7 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150

2SB1 1 8 8 TRANSISTOR(PNP) SOT-89 1. BASE FEATURES 1 Low VCE(sat). 2. COLLECTOR Complements the 2SD1766 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -32 V Collector-Emitter Voltage VEBO -5 V Emitter-Base Voltage Collector Current -Continuous IC -2 A Collector Power Dissip

2SB1188 SOT-89 Transistor(PNP) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 1.6 2 1.8 3. EMITTER 1.4 1.4 3 2.6 4.25 2.4 3.75 Features 0.8 MIN 0.53 Low VCE(sat). 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 Complements the 2SD1766 1.5 3.0 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCB

2SB1189 SOT-89 Transistor(PNP) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 1.6 1.8 2 1.4 1.4 3. EMITTER 3 2.6 4.25 2.4 3.75 Features 0.8 MIN High breakdown voltage 0.53 0.40 0.48 0.44 2x) 0.13 B 0.35 Complements to 2SD1767 0.37 1.5 3.0 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value

2SB1182(PNP) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3EMITTER 1 2 3 Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO Collector- Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -2 A PC Collector Power Dissipat

2SB1188K PNP Silicon Medium Power Transistors SOT-89 P b Lead(Pb)-Free 1 2 1. BASE 3 2. COLLECTOR 3. EMITTER ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise specified) Unit Parameter Symbol Ratings Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -2 A Collector Power Dissipation PD

2SB1188 Epitaxial Planar PNP Transistors SOT-89 1 2 1. BASE 3 2. COLLECTOR 3. EMITTER % C ABSOLUTE MAXIMUM RATINGS (Ta=25 ) Rating Symbol Limits Unit Collector-Base Voltage Vdc VCBO -40 Collector-Emitter Voltage Vdc VCEO -32 Emitter-Base Voltage Vdc VEBO -5 IC A(DC) -2 Collector Current ICP -3 A (Pulse)* PC W Collector Power Dissipation 0.5 % T , Tstg C Junctio

2SB1182 PNP PLASTIC ENCAPSULATE TRANSISTORS P b Lead(Pb)-Free 1.BASE 3 2.COLLECTOR 2 3.EMITTER 1 D-PAK(TO-252) ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Symbol Limits Unit VCBO V Collector-Base Voltage -40 VCEO V Collector-Emitter Voltage -32 VEBO V Emitter-Base Voltage -5.0 Collector Current IC A -2.0 Collector Power Dissipation PD 1.5 W Junction Temperature Tj +150

2SB1188 SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES Low VCE(sat).VCE(sat) = -0.5V (Typ.)(IC/IB = -2A / -0.2A) SOT-89 Complements the 2SD1766 Weight 0.05 g RoHS product for packing code suffix "G" 1. BASE Halogen free product for packing code suffix "H" MAXIMUM RATINGS (TA=25 unless otherwise noted) 1 2. COLLECTOR Symbol Parameter Value U

2SB1185 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-220F PNP Silicon PNP transistor in a TO-220F Plastic Package. / Features V 2SD1762 CE(sat) Low VCE(sat),complementary pair with 2SD1762. / Applications Power amplifier applications. / Equivalent Circu

2SB1182 Rev.E May.-2016 DATA SHEET / Descriptions TO-252 PNP Silicon PNP transistor in a TO-252 Plastic Package. / Features , 2SD1758 Low VCE(sat),complements the 2SD1758. / Applications Medium power amplifier applications. / Equivalent Circuit

ST 2SB1188U PNP Silicon Epitaxial Planar Transistor Medium power transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 32 V Emitter Base Voltage -VEBO 5 V Collector Current - DC -IC 2 A Collector Current - Pulse 1) -ICP 3 1) A 0.5 PC W Collector Power Dissipation 2 2) Junction Temper

SMD Type Transistors PNP Transistors 2SB1189 1.70 0.1 Features High breakdown voltage, BVCEO=-80V, and High Current, IC=-0.7A Complementary to 2SD1767 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage VCEO -80 V Emitter - Base Voltage

SMD Type Transistors PNP Transistors 2SB1181 TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Hight breakdown voltage and high current. Low collector-emitter saturation voltage VCE(sat) Good hFE linearty. 0.127 Complementary to 2SD1733 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector

SMD Type Transistors Medium Power Transistor 2SB1182 TO-252 Unit mm Features +0.15 +0.1 6.50-0.15 2.30-0.1 +0.2 +0.8 5.30-0.2 0.50-0.7 Low VCE(sat). Epitaxial planar type PNP silicon transistor 0.127 +0.1 max 0.80-0.1 +0.1 2.3 0.60-0.1 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO

SMD Type Transistors SMD Type PNP Transistor 2SB1188 1.70 0.1 Features Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base Voltage VCBO -40 V Collector-emitter Voltage VCEO -32 V Emitter-base Voltage VEBO -5 V IC -2 A Collector current ICP * -3

SMD Type Transistors PNP Transistors 2SB1182 TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Low VCE(sat).VCE(sat) = -0.5V Complementary to 2SD1758 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector

CHENMKO ENTERPRISE CO.,LTD 2SB1182GP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 32 Volts CURRENT 2 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE * Small flat package. (DPAK) DPAK * PC= 1.5 W (mounted on ceramic substrate). * High saturation current capability. .094 (2.38) CONSTRUCTION .086 (2.19) .022 (0.55) * PNP Switching Transistor .018 (0.45) (1) (3

CHENMKO ENTERPRISE CO.,LTD 2SB1188GP SURFACE MOUNT PNP Medium Power Transistor VOLTAGE 32 Volts CURRENT 2 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE SC-62/SOT-89 * Small flat package. (SC-62/SOT-89) * Low saturation voltage VCE(sat)=-0.5V(typ.)(IC/IB=-2A/-0.2A) CONSTRUCTION 4.6MAX. 1.6MAX. 1.7MAX. 0.4+0.05 * PNP Switching Transistor MARKING * HFE(P) NO +

2SB1185(3CA1185) PNP /SILICON PNP TRANSISTOR /Purpose Power amplifier applications. V 2SD1762(3DA1762) CE(sat) Features Low V ,complementary pair with 2SD1762(3DA1762). CE(sat) /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -60 V CBO V -50 V CEO

2SB1188 SMD Ty p e PNP Transistors Features Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) 3 2 1 1.Base 2.Collector 3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base Voltage VCBO -40 V Collector-emitter Voltage VCEO -32 V Emitter-base Voltage VEBO -5 V IC -2 A Collector current ICP * -3 A Coll

2SB1188SQ PNP Transistor SOT-89 Features Low collector saturation voltage Excellent h characteristics FE 1. Base 2. Collector 3.Emitter Marking 1188-P 1188-Q 1188-R Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 32 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 2 A Colle

2SB1188 PNP-Silicon General use Transistors 1W 1.5A 25V Applications Can be used for switching and amplifying in various 4 electrical and electronic circuit. 3 2 1 2 1 3 Maximum ratings SOT-89 Parameters Symbol Rating Unit 1 Base 2 Collector 3 Emitter V VCEO 25 Collector-emitter voltage (IB=0) VCBO 40 V Collector-base voltage IE=0 VEBO 6 V Emitter-b

isc Silicon PNP Power Transistor 2SB1187 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min.) (BR)CEO Wide Area of Safe Operation Complement to Type 2SD1761 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET

isc Silicon PNP Power Transistor 2SB1186A DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -160V(Min.) (BR)CEO Good Linearity of h FE Complement to Type 2SD1763A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 )

isc Silicon PNP Power Transistor 2SB1185 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V(Min.) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage- V = -1.0V(Max.)@ I = -2A CE(sat) C Complement to Type 2SD1762 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1186 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -120V(Min.) (BR)CEO Good Linearity of h FE Complement to Type 2SD1763 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver stage amplifier applications. ABSOLUTE MAXIM

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1182 DESCRIPTION Small and slim package 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power dissipation ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -32 V CEO V Emitter-