2SB1184 / 2SB1243TransistorsPower Transistor (-60V, -3A)2SB1184 / 2SB1243 Features External dimensions (Units : mm)1) Low VCE(sat).2SB1184 2SB1243 VCE(sat) = -0.5V (Typ.)2.50.26.80.22.3 +0.26.50.2 -0.1 (IC/IB = -2A / -0.2A)C0.55.1 +0.2 -0.1 0.50.12) Complements the 2SD1760 / 2SD1864.0.65Max.0.650.10.750.90.550.10.50.1 Structure2.3

Power Transistor (-60V, -3A) 2SB1184 / 2SB1243 Features Dimensions (Unit : mm) 1) Low VCE(sat). 2SB1184 2SB1243VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) 2.50.26.80.22.3 +0.26.50.2 -0.1C0.52) Complements the 2SD1760 / 2SD1864. 5.1 +0.2 -0.1 0.50.1Structure 0.65Max.0.650.10.75Epitaxial planar type 0.9PNP silicon transistor 0.550

TransistorsPower Transistor (*60V, *3A)2SB1184 / 2SB1243 / 2SB1185FFeatures FExternal dimensions (Units: mm)1) Low VCE(sat).VCE(sat) = *0.5V (Typ.)(IC / IB = *2A / *0.2A)2) Complements the 2SD1760 /2SD1864 / 2SD1762.FStructureEpitaxial planar typePNP silicon transistor(96-128-B57)223Transistors 2SB1184 / 2SB1243 / 2SB1185FAbsolute maximum ratings (Ta = 25_C)FEle

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors TO-252-2L2SB1184 TRANSISTOR (PNP) FEATURES Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) 1. BASE Complements the 2SD1760 / 2SD1864. 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value UnitVCBO Collector Base Voltage -

2SB1184(PNP)TO-251/TO-252-2L Transistor TO-2511. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) Complements the 2SD1760 / 2SD1864. MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2LSymbol Parameter Value UnitsVCBO Collector Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Ba

2SB1184PNP PLASTIC ENCAPSULATE TRANSISTORSP bP b Lead(Pb)-FreeFeatures:1.BASE1.BASE2.COLLECTOR2.COLLECTOR* Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A)).3.EMITTER3.EMITTERTO-251MAXIMUM RATINGS (TA=25C unless otherwise noted) TO-251Symbol ValueParameter UnitCollector-Base VoltageV -60VCBOV-50 VCollector-Emitter Voltage CEOVEmitte

SMD Type TransistorsPNP Transistors2SB1184TO-252Unit: mm+0.156.50-0.15 Features +0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Low VCE(sat).VCE(sat) = -0.5V Complementary to 2SD17600.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

2SB1184(3CA1184) PNP /SILICON PNP TRANSISTOR : Purpose: Power amplifier applications :, 2SD1760(3DA1760) Features: Low V complements the 2SD1760(3DA1760). CE(sat),/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -60 V CBO V -50 V CEO

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB1184DESCRIPTIONLow VCE(sat)Small and slim packageComplements the 2SD1760/2SD1864100% testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower dissipationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -60 VCB

SMD Type TransistorsPower transistor2SB1184TO-252Unit: mmFeatures+0.15 +0.16.50-0.15 2.30-0.1+0.2 +0.85.30-0.2 0.50-0.7Low VCE(sat).PNP silicon transistor.Epitaxial planar type0.127+0.1 max0.80-0.1+0.12.3 0.60-0.11 Base+0.154.60-0.152 Collector3 EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -60 V

2SB1189 / 2SB1238 / 2SB899FTransistorsTransistors2SD1767 / 2SD1859 / 2SD1200F(96-618-B13)(96-750-D13)278

Power Transistor (80V, 1A) 2SB1260 / 2SB1181 / 2SB1241 Features Dimensions (Unit : mm) 1) Hight breakdown voltage and high current. 2SB1260 2SB1181BVCEO=80V, IC = 1A 2.3+0.26.50.22) Good hFE linearty. C0.55.1+0.23) Low VCE(sat). 0.50.14.5+0.21.5Complements the 2SD1898 / 2SD1863 / 2SD1733. 1.60.10.650.1 0.75(1) (2) (3)0.90

Medium power transistor (32V, 2A) 2SB1188 / 2SB1182 / 2SB1240 Features Dimensions (Unit : mm) 1) Low VCE(sat). 2SB1188 2SB1182VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2.3+0.26.50.2-0.14.5+0.2-0.1 C0.52) Complements the 2SD1766 / 2SD1758 / 2SD1862. +0.2 5.1+0.21.5-0.1 -0.1 0.50.11.60.10.650.10.75(1) (2) (3)+0.1Structure 0.4-

Medium power transistor(80V, 0.7A) 2SB1189 / 2SB1238 Features Dimensions (Unit : mm) 1) High breakdown voltage, BVCEO=80V, and 2SB1189high current, IC=0.7A. 4.02) Complements the 2SD1767 / 2SD1859. 1.0 2.5 0.5 (1)(2)Absolute maximum ratings (Ta=25C) (3)Parameter Symbol Limits UnitCollector-base voltage VCBO -80 VCollector-emitter voltage VCE

2SB1183 / 2SB1239TransistorsPower transistor (-40V, -2A)2SB1183 / 2SB1239 External dimensions (Units : mm) Features1) Darlington connection for high DC current gain.2SB11832) Built-in 4k resistor between base and emitter.5.5 1.53) Complements the 2SD1759 / 2SD1861.0.9C0.5 Equivalent circuit0.8Min.1.5C2.59.5BROHM : CPT3 (1) Base(Gate)RBE 4k(2) Co

2SB1183 / 2SB1239 / 2SB786FTransistorsTransistors2SD1759 / 2SD1861 / 2SD947F(96-126-B23)(94S-321-D23)283

2SB1260 / 2SB1181Datasheet PNP -1.0A -80V Middle Power TransistorlOutlineCollector MPT3 CPT3Parameter ValueVCEO-80VBase Collector IC-1.0AEmitter Base Emitter 2SB1260 2SB1181 lFeatures(SC-62) (SC-63) 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD1898 / 2SD17333) Low VCE(sat)VCE(sat)= -0.4V Max. (IC/IB= -500mA/

TransistorsMedium power Transistor(*32V,*2A)2SB1188 / 2SB1182 / 2SB1240 /2SB822 / 2SB1277 / 2SB911MFFeatures FExternal dimensions (Unit: mm)1) Low VCE(sat).VCE(sat) = *0.5V (Typ.)(IC / IB = *2A / *0.2A)2) Complements the 2SD1766 /2SD1758 / 2SD1862 / 2SD1189F /2SD1055 / 2SD1919 / SD1227M.FStructureEpitaxial planar typePNP silicon transistor(96-131-B24)2152SB1188

2SB1275 / 2SB1236A / 2SB1569A / 2SB1186ATransistorsTransistors2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A(96-612-A58)(96-744-C58)277

Medium power transistor (32V, 2A) 2SB1182 / 2SB1240 Features Dimensions (Unit : mm) 1) Low VCE(sat). 2SB1182 2SB1240VCE(sat) = 0.5V (Typ.) 2.50.26.80.2(IC/IB = 2A / 0.2A) 2.3+0.26.50.2-0.1C0.52) Complements 2SD1758 / 2SD1862. 5.1+0.2-0.1 0.50.10.65Max.0.650.1Structure 0.750.90.50.1Epitaxial planar type 0.550.1PN

Power Transistors2SB1180, 2SB1180ASilicon PNP epitaxial planar type darlingtonUnit: mmFor medium-speed voltage switching7.00.33.50.2Complementary to 2SD1750, 2SD1750A 3.00.2 0 to 0.152.00.2 Features High forward current transfer ratio hFE I type package enabling direct soldering of the radiating fin to theprinted circuit board, etc. of small electron

UNISONIC TECHNOLOGIES CO., LTD 2SB1188 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB1188 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 FEATURES SOT-89*High current output up to 3A *Low saturation voltage ORDERING INFORMATION Pin Assignment Orderi

UNISONIC TECHNOLOGIES CO., LTD 2SB1182 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR 1TO-252 DESCRIPTION The UTC 2SB1182 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage ORDERING INFORMATION Ordering Number Pin Assignm

2SB1188 -2A, -40V PNP Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 DESCRIPTION The 2SB1188 is designed for medium poweramplifier applications. 4123AFEATURES EC Low collector saturation voltage : VCE(sat)=-0.5V(Typ.) RoHS Compliant Product B DF GCLASSIFICATION

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1189 TRANSISTOR (PNP) 1. BASE FEATURES High breakdown voltage 2. COLLECTOR 1 Complements to 2SD1767 2 3. EMITTER 3 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO -80 VCollector-Base Voltage VCEO Collector-Emitter Volta

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors TO-220-3L 2SB1185 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR Low Collector Saturation Voltage Complement to Type 2SD1762 3. EMITTER APPLICATIONS For Use in Low Frequency Power Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter V

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1188 TRANSISTOR (PNP) SOT-89-3L 1. BASE FEATURES Low VCE(sat). 2. COLLECTOR 1 Complements the 2SD1766 2 3. EMITTER 3 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO -40 VCollector-Base Voltage VCEO -32 VCollector-Emitter Voltage V

JMnic Product Specification Silicon PNP Power Transistors 2SB1187 DESCRIPTION With TO-220Fa package Low saturation voltage Complement to type 2SD1761 Excellent DC current gain characteristics Wide safe operating area APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings

JMnic Product Specification Silicon PNP Power Transistors 2SB1186A DESCRIPTION With TO-220Fa package Low collector saturation votlage Complement to type 2SD1763A High breakdown voltage APPLICATIONS For use in low frequency power amplifer applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER

JMnic Product Specification Silicon PNP Power Transistors 2SB1185 DESCRIPTION With TO-220Fa package Low collector saturation votlage Complement to type 2SD1762 APPLICATIONS For use in low frequency power amplifer applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO C

JMnic Product Specification Silicon PNP Power Transistors 2SB1186 DESCRIPTION With TO-220Fa package Low collector saturation votlage Complement to type 2SD1763 High breakdown voltage APPLICATIONS For use in low frequency power amplifer applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CO

2SB1 1 8 9TRANSISTOR(PNP)FEATURES High breakdown voltage Complements to 2SD1767 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO -80 VCollector-Base Voltage VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.7 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150

2SB1 1 8 8 TRANSISTOR(PNP) SOT-89 1. BASE FEATURES 1 Low VCE(sat). 2. COLLECTOR Complements the 2SD1766 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO -40 VCollector-Base Voltage VCEO -32 VCollector-Emitter Voltage VEBO -5 VEmitter-Base Voltage Collector Current -Continuous IC -2 ACollector Power Dissip

2SB1188 SOT-89 Transistor(PNP)1. BASE SOT-892. COLLECTOR 1 4.6B4.41.62 1.83. EMITTER 1.41.43 2.64.252.43.75Features 0.8MIN0.53 Low VCE(sat).0.400.480.442x)0.13 B0.35 0.37 Complements the 2SD1766 1.53.0Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCB

2SB1189 SOT-89 Transistor(PNP)1. BASE SOT-892. COLLECTOR 1 4.6B4.41.61.82 1.41.43. EMITTER 3 2.64.252.43.75Features 0.8MIN High breakdown voltage 0.530.400.480.442x)0.13 B0.35 Complements to 2SD1767 0.371.53.0Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value

2SB1182(PNP)TO-251/TO-252-2L TransistorTO-2511.BASE 2.COLLECTOR 3EMITTER 1 2 3 Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2LSymbol Parameter Value UnitsVCBO Collector- Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -2 A PC Collector Power Dissipat

2SB1188KPNP Silicon Medium Power TransistorsSOT-89P b Lead(Pb)-Free121. BASE32. COLLECTOR3. EMITTERABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise specified)Unit Parameter Symbol Ratings Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -2 A Collector Power Dissipation PD

2SB1188Epitaxial Planar PNP TransistorsSOT-89121. BASE32. COLLECTOR3. EMITTER%CABSOLUTE MAXIMUM RATINGS (Ta=25 )Rating SymbolLimits UnitCollector-Base VoltageVdcVCBO -40Collector-Emitter VoltageVdcVCEO -32Emitter-Base VoltageVdcVEBO -5ICA(DC)-2Collector CurrentICP-3 A (Pulse)*PC WCollector Power Dissipation 0.5%T ,Tstg CJunctio

2SB1182PNP PLASTIC ENCAPSULATE TRANSISTORSP b Lead(Pb)-Free1.BASE32.COLLECTOR23.EMITTER 1D-PAK(TO-252)ABSOLUTE MAXIMUM RATINGS (TA=25C)Rating Symbol Limits UnitVCBO VCollector-Base Voltage-40VCEOVCollector-Emitter Voltage -32VEBOVEmitter-Base Voltage -5.0Collector CurrentIC A-2.0Collector Power Dissipation PD 1.5 WJunction TemperatureTj+150

2SB1188SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES Low VCE(sat).VCE(sat) = -0.5V (Typ.)(IC/IB = -2A / -0.2A) SOT-89 Complements the 2SD1766 Weight: 0.05 gRoHS product for packing code suffix "G" 1. BASE Halogen free product for packing code suffix "H"MAXIMUM RATINGS (TA=25 unless otherwise noted) 1 2. COLLECTOR Symbol Parameter Value U

2SB1185 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-220F PNP Silicon PNP transistor in a TO-220F Plastic Package. / Features V 2SD1762 CE(sat)Low VCE(sat),complementary pair with 2SD1762. / Applications Power amplifier applications. / Equivalent Circu

2SB1182 Rev.E May.-2016 DATA SHEET / Descriptions TO-252 PNP Silicon PNP transistor in a TO-252 Plastic Package. / Features , 2SD1758 Low VCE(sat),complements the 2SD1758. / Applications Medium power amplifier applications. / Equivalent Circuit

ST 2SB1188U PNP Silicon Epitaxial Planar Transistor Medium power transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 32 VEmitter Base Voltage -VEBO 5 VCollector Current - DC -IC 2 A Collector Current - Pulse 1) -ICP 3 1) A 0.5 PC W Collector Power Dissipation2 2) Junction Temper

SMD Type TransistorsPNP Transistors2SB11891.70 0.1 Features High breakdown voltage, BVCEO=-80V,and High Current, IC=-0.7A Complementary to 2SD17670.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage VCEO -80 V Emitter - Base Voltage

SMD Type TransistorsPNP Transistors2SB1181TO-252Unit: mm+0.156.50-0.15+0.1 Features2.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Hight breakdown voltage and high current. Low collector-emitter saturation voltage VCE(sat) Good hFE linearty.0.127 Complementary to 2SD1733+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector

SMD Type TransistorsMedium Power Transistor2SB1182TO-252Unit: mmFeatures+0.15 +0.16.50-0.15 2.30-0.1+0.2 +0.85.30-0.2 0.50-0.7Low VCE(sat).Epitaxial planar typePNP silicon transistor0.127+0.1 max0.80-0.1+0.12.3 0.60-0.11 Base+0.154.60-0.152 Collector3 EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO

SMD Type TransistorsSMD TypePNP Transistor2SB11881.70 0.1FeaturesLow VCE(sat).VCE(sat) = -0.5V (Typ.)(IC/IB = -2A / -0.2A)0.42 0.10.46 0.11.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base Voltage VCBO -40 VCollector-emitter Voltage VCEO -32 VEmitter-base Voltage VEBO -5 VIC -2 ACollector currentICP * -3

SMD Type TransistorsPNP Transistors2SB1182TO-252Unit: mm+0.156.50-0.15+0.1 Features2.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Low VCE(sat).VCE(sat) = -0.5V Complementary to 2SD17580.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

CHENMKO ENTERPRISE CO.,LTD2SB1182GPSMALL FLAT PNP Epitaxial Transistor VOLTAGE 32 Volts CURRENT 2 AmpereAPPLICATION* Power driver and Dc to DC convertor .FEATURE* Small flat package. (DPAK)DPAK* PC= 1.5 W (mounted on ceramic substrate).* High saturation current capability..094 (2.38)CONSTRUCTION.086 (2.19).022 (0.55)* PNP Switching Transistor.018 (0.45)(1) (3

CHENMKO ENTERPRISE CO.,LTD2SB1188GPSURFACE MOUNT PNP Medium Power TransistorVOLTAGE 32 Volts CURRENT 2 AmpereAPPLICATION* Power driver and Dc to DC convertor .FEATURESC-62/SOT-89* Small flat package. (SC-62/SOT-89)* Low saturation voltage VCE(sat)=-0.5V(typ.)(IC/IB=-2A/-0.2A) CONSTRUCTION 4.6MAX. 1.6MAX.1.7MAX. 0.4+0.05* PNP Switching TransistorMARKING* HFE(P):NO +

2SB1185(3CA1185) PNP /SILICON PNP TRANSISTOR :/Purpose: Power amplifier applications. :V 2SD1762(3DA1762) CE(sat)Features: Low V ,complementary pair with 2SD1762(3DA1762). CE(sat)/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -60 V CBO V -50 V CEO

2SB1188SMD Ty p e PNP TransistorsFeaturesLow VCE(sat).VCE(sat) = -0.5V (Typ.)(IC/IB = -2A / -0.2A)321 1.Base2.Collector3.Emitter Simplified outline(SOT-89)Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base Voltage VCBO -40 VCollector-emitter Voltage VCEO -32 VEmitter-base Voltage VEBO -5 VIC -2 ACollector currentICP * -3 AColl

2SB1188SQ PNP Transistor SOT-89Features Low collector saturation voltage Excellent h characteristicsFE 1. Base 2. Collector 3.EmitterMarking: 1188-P1188-Q 1188-RAbsolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 32 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 2 A Colle

2SB1188PNP-Silicon General use Transistors1W 1.5A25V ApplicationsCan be used for switching and amplifying in various 4 electrical and electronic circuit. 32 1 2 1 3Maximum ratings SOT-89 Parameters Symbol Rating Unit1 Base 2 Collector 3 EmitterV VCEO 25Collector-emitter voltage (IB=0) VCBO 40 VCollector-base voltageIE=0 VEBO 6 VEmitter-b

isc Silicon PNP Power Transistor 2SB1187DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min.)(BR)CEOWide Area of Safe OperationComplement to Type 2SD1761Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

isc Silicon PNP Power Transistor 2SB1186ADESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -160V(Min.)(BR)CEOGood Linearity of hFEComplement to Type 2SD1763AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon PNP Power Transistor 2SB1185DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min.)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage-: V = -1.0V(Max.)@ I = -2ACE(sat) CComplement to Type 2SD1762Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB1186DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOGood Linearity of hFEComplement to Type 2SD1763Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplifier applications.ABSOLUTE MAXIM

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB1182DESCRIPTIONSmall and slim package100% testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower dissipationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -40 VCBOV Collector-Emitter Voltage -32 VCEOV Emitter-