2SB1189 / 2SB1238 / 2SB899FTransistorsTransistors2SD1767 / 2SD1859 / 2SD1200F(96-618-B13)(96-750-D13)278

Medium power transistor(80V, 0.7A) 2SB1189 / 2SB1238 Features Dimensions (Unit : mm) 1) High breakdown voltage, BVCEO=80V, and 2SB1189high current, IC=0.7A. 4.02) Complements the 2SD1767 / 2SD1859. 1.0 2.5 0.5 (1)(2)Absolute maximum ratings (Ta=25C) (3)Parameter Symbol Limits UnitCollector-base voltage VCBO -80 VCollector-emitter voltage VCE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1189 TRANSISTOR (PNP) 1. BASE FEATURES High breakdown voltage 2. COLLECTOR 1 Complements to 2SD1767 2 3. EMITTER 3 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO -80 VCollector-Base Voltage VCEO Collector-Emitter Volta

2SB1 1 8 9TRANSISTOR(PNP)FEATURES High breakdown voltage Complements to 2SD1767 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO -80 VCollector-Base Voltage VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.7 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150

2SB1189 SOT-89 Transistor(PNP)1. BASE SOT-892. COLLECTOR 1 4.6B4.41.61.82 1.41.43. EMITTER 3 2.64.252.43.75Features 0.8MIN High breakdown voltage 0.530.400.480.442x)0.13 B0.35 Complements to 2SD1767 0.371.53.0Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value

SMD Type TransistorsPNP Transistors2SB11891.70 0.1 Features High breakdown voltage, BVCEO=-80V,and High Current, IC=-0.7A Complementary to 2SD17670.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage VCEO -80 V Emitter - Base Voltage