2SB1217 - описание и поиск аналогов

isc Silicon PNP Power Transistor 2SB1217 DESCRIPTION High Collector Current -I = -3A C Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Complement to Type 2SD1818 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter, driver, solenid

Ordering number ENN2539B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1215/2SD1815 High-Current Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit mm other general high-current switching applications. 2045B [2SB1215/2SD1815] 6.5 Features 2.3 5.0 0.5 4 Low collector-to-emitter saturation voltage. Exclle

Ordering number ENN2086B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1204/2SD1804 High-Current Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit mm other general high-current switching applications. 2045B [2SB1204/2SD1804] 6.5 Features 2.3 5.0 0.5 4 Low collector-to-emitter saturation voltage. High c

Ordering number ENN2540A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1216/2SD1816 High-Current Switching Applications Applications Package Dimensions Suitable for relay drivers, high-speed inverters, unit mm converters, and other general high-current switching 2045B applications. [2SB1216/2SD1816] 6.5 2.3 5.0 0.5 4 Features Low collector-to-emitter saturation voltag

Ordering number EN2539C 2SB1215/2SD1815 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 100V, 3A, Low VCE sat PNP NPN Single TP/TP-FA Applications Relay drivers, high-speed inverters, converters, and other general high-current switching applications Features Low collector to emitter saturation voltage Excllent linearity of hFE Small-sized package permittin

Ordering number EN2540B 2SB1216/2SD1816 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 100V, 4A, Low VCE sat , PNP NPN Single TP/TP-FA Applications Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching applications Features Low collector-to-emitter saturation voltage Good linearity of hFE Small and slim pac

2SB1216, 2SD1816 Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single www.onsemi.com Features Low Collector to Emitter Saturation Voltage Small and Slim Package Facilitating Compactness of Sets ELECTRICAL CONNECTION High fT Good Linearity of hFE 2,4 2,4 Fast Switching Time 1 1 1 Base Typical Applications 2 Collector 3 Emitter

Transistors 2SB1219, 2SB1219A Silicon PNP epitaxial planer type Unit mm For general amplification 0.3+0.1 0.15+0.10 0.05 0.0 Complementary to 2SD1820 and 2SD1820A 3 Features Large collector current IC 1 2 S-mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine (0.65) (0.65) 1.3 0.1 packing. 2.0

Transistor 2SB1219, 2SB1219A Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SD1820 and 2SD1820A Features 2.1 0.1 0.425 1.25 0.1 0.425 Large collector current IC. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 1 packing. 3 Absolute Maximum Ratings (Ta=25 C) 2

Transistor 2SB1218A Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SD1819A 2.1 0.1 0.425 1.25 0.1 0.425 Features High foward current transfer ratio hFE. 1 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25 C) Paramet

Transistor 2SB1218A Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SD1819A 2.1 0.1 0.425 1.25 0.1 0.425 Features High foward current transfer ratio hFE. 1 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25 C) Paramet

2SB1218A -0.1A , -60V PNP Silicon Epitaxial Paner Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free APPLICATIONS SOT-323 General Purpose Amplification A L 3 FEATURES 3 Top View C B High DC Current Gain 1 Complementary to 2SD1819A 1 2 2 K E CLASSIFICATION OF hFE D Product-Rank 2SB1218A-Q

2SB1 21 8 A TRANSISTOR(PNP) FEATURES SOT 323 High DC Current Gain Complementary to 2SD1819A APPLICATIONS General Purpose Amplification MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -45 V CBO 3. COLLECTOR VCEO Collector-Emitter Voltage -45 V V Emitter-Base Voltage -7 V EBO I

SMD Type Transistors PNP Transistors 2SB1215 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features Low collector-to-emitter saturation voltage. High current and high fT Fast switching time. 0.127 +0.1 0.80-0.1 max Complementary to 2SD1815 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolut

SMD Type Transistors PNP Transistors 2SB1219 Features Large collector current IC Complementary to 2SD1820 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -25 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -0.5 A Collector Cur

SMD Type Transistors PNP Transistors 2SB1216 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features Low collector-to-emitter saturation voltage. High current and high fT 0.127 Fast switching time. +0.1 0.80-0.1 max Complementary to 2SD1816 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absol

SMD Type Transistors PNP Transistors 2SB1219A Features Large collector current IC Complementary to 2SD1820A 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -0.5 A Collector C

SMD Type Transistors PNP Transistors 2SB1218A Features High DC Current Gain Complementary to 2SD1819A 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -45 Collector - Emitter Voltage VCEO -45 V Emitter - Base Voltage VEBO -7 Collector Current - Continuous IC -100 mA Collector Power D

isc Silicon PNP Power Transistor 2SB1215 DESCRIPTION Excellent linearity of h FE Small and slim package making it easy to make 2SB1215/2SD1815-used set smaller Low collector-to-emitter saturation voltage Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers,High speed inve

isc Silicon PNP Power Transistor 2SB1216 DESCRIPTION Excellent linearity of h FE Small and slim package facilitating compactness of sets Low collector-to-emitter saturation voltage Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers,High speed inverters,converters and ot

isc PNP Epitaxial Planar Silicon Transistor 2SB1214 DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Low Collector Saturation Voltage- V = -1.5V(Max) @I = -2.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers,High speed inverters,converters and other gene