Биполярный транзистор 2SB1219 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SB1219
Маркировка: C
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 195 °C
Граничная частота коэффициента передачи тока (ft): 100 MHz
Статический коэффициент передачи тока (hfe): 120
Корпус транзистора: TO236
2SB1219 Datasheet (PDF)
2sb1219.pdf
Transistors2SB1219, 2SB1219ASilicon PNP epitaxial planer typeUnit: mmFor general amplification0.3+0.1 0.15+0.100.050.0Complementary to 2SD1820 and 2SD1820A3 Features Large collector current IC1 2 S-mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine (0.65) (0.65)1.30.1packing.2.0
2sb1219 e.pdf
Transistor2SB1219, 2SB1219ASilicon PNP epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SD1820 and 2SD1820AFeatures 2.1 0.10.425 1.25 0.1 0.425Large collector current IC.S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine1packing.3Absolute Maximum Ratings (Ta=25C)2
2sb1219.pdf
SMD Type TransistorsPNP Transistors2SB1219 Features Large collector current IC Complementary to 2SD18201 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -25 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -0.5A Collector Cur
2sb1219a.pdf
SMD Type TransistorsPNP Transistors2SB1219A Features Large collector current IC Complementary to 2SD1820A1 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -0.5A Collector C
2sb1215 2sd1815.pdf
Ordering number:ENN2539BPNP/NPN Epitaxial Planar Silicon Transistors2SB1215/2SD1815High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2045B[2SB1215/2SD1815]6.5Features2.35.00.54 Low collector-to-emitter saturation voltage. Exclle
2sb1214.pdf
Ordering number:ENN2086BPNP/NPN Epitaxial Planar Silicon Transistors2SB1204/2SD1804High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2045B[2SB1204/2SD1804]6.5Features2.35.00.54 Low collector-to-emitter saturation voltage. High c
2sb1216 2sd1816.pdf
Ordering number:ENN2540APNP/NPN Epitaxial Planar Silicon Transistors2SB1216/2SD1816High-Current Switching ApplicationsApplications Package Dimensions Suitable for relay drivers, high-speed inverters,unit:mmconverters, and other general high-current switching2045Bapplications.[2SB1216/2SD1816]6.52.35.00.54Features Low collector-to-emitter saturation voltag
2sb1215 2sd1815.pdf
Ordering number : EN2539C2SB1215/2SD1815Bipolar Transistorhttp://onsemi.com() () ( ) ( )100V, 3A, Low VCE sat PNP NPN Single TP/TP-FAApplications Relay drivers, high-speed inverters, converters, and other general high-current switching applicationsFeatures Low collector to emitter saturation voltage Excllent linearity of hFE Small-sized package permittin
2sb1216s-e 2sb1216s-h 2sb1216s 2sb1216s 2sb1216t-e 2sb1216t-h 2sb1216t 2sb1216t.pdf
Ordering number : EN2540B2SB1216/2SD1816Bipolar Transistorhttp://onsemi.com() () ( ) ( )100V, 4A, Low VCE sat , PNP NPN Single TP/TP-FAApplications Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching applicationsFeatures Low collector-to-emitter saturation voltage Good linearity of hFE Small and slim pac
2sb1216 2sd1816.pdf
2SB1216, 2SD1816 Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single www.onsemi.com Features Low Collector to Emitter Saturation Voltage Small and Slim Package Facilitating Compactness of Sets ELECTRICAL CONNECTION High fT Good Linearity of hFE 2,4 2,4 Fast Switching Time 1 11: BaseTypical Applications 2 : Collector3: Emitter
2sb1218a e.pdf
Transistor2SB1218ASilicon PNP epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SD1819A2.1 0.10.425 1.25 0.1 0.425FeaturesHigh foward current transfer ratio hFE. 1S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine3packing.2Absolute Maximum Ratings (Ta=25C)Paramet
2sb1218a.pdf
Transistor2SB1218ASilicon PNP epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SD1819A2.1 0.10.425 1.25 0.1 0.425FeaturesHigh foward current transfer ratio hFE. 1S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine3packing.2Absolute Maximum Ratings (Ta=25C)Paramet
2sb1218a.pdf
2SB1218A -0.1A , -60V PNP Silicon Epitaxial Paner Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free APPLICATIONS SOT-323 General Purpose Amplification AL3FEATURES 3Top View C B High DC Current Gain 1 Complementary to 2SD1819A 1 22K ECLASSIFICATION OF hFE DProduct-Rank 2SB1218A-Q
2sb1218a.pdf
2SB1 21 8 ATRANSISTOR(PNP)FEATURES SOT323 High DC Current Gain Complementary to 2SD1819A APPLICATIONS General Purpose Amplification MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -45 V CBO3. COLLECTOR VCEO Collector-Emitter Voltage -45 V V Emitter-Base Voltage -7 V EBOI
2sb1215.pdf
SMD Type TransistorsPNP Transistors2SB1215TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low collector-to-emitter saturation voltage. High current and high fT Fast switching time. 0.127+0.10.80-0.1max Complementary to 2SD1815+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolut
2sb1216.pdf
SMD Type TransistorsPNP Transistors2SB1216TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low collector-to-emitter saturation voltage. High current and high fT0.127 Fast switching time.+0.10.80-0.1max Complementary to 2SD1816+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absol
2sb1218a.pdf
SMD Type TransistorsPNP Transistors2SB1218A Features High DC Current Gain Complementary to 2SD1819A1 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -45 Collector - Emitter Voltage VCEO -45 V Emitter - Base Voltage VEBO -7 Collector Current - Continuous IC -100 mA Collector Power D
2sb1217 3ca1217.pdf
2SB1217(3CA1217) PNP /SILICON PNP TRANSISTOR : DC-DC Purpose:It is suitable for DC-DC converter,or driver of solenoid or motor. : ,,, 2SD1818(3DA1818) Features: Low V ,large current, high P ,complementary to 2SD1818(3DA1818). CE(sat) C
2sb1215.pdf
isc Silicon PNP Power Transistor 2SB1215DESCRIPTIONExcellent linearity of hFESmall and slim package making it easy to make 2SB1215/2SD1815-used set smallerLow collector-to-emitter saturation voltageFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers,High speed inve
2sb1216.pdf
isc Silicon PNP Power Transistor 2SB1216DESCRIPTIONExcellent linearity of hFESmall and slim package facilitating compactness of setsLow collector-to-emitter saturation voltageFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers,High speed inverters,converters and ot
2sb1214.pdf
isc PNP Epitaxial Planar Silicon Transistor 2SB1214DESCRIPTIONHigh DC current gainCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -1.5V(Max) @I = -2.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers,High speed inverters,converters and othergene
2sb1217.pdf
isc Silicon PNP Power Transistor 2SB1217DESCRIPTIONHigh Collector Current -I = -3ACCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageComplement to Type 2SD1818Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converter, driver, solenid
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050