2SB1254 - описание и поиск аналогов

Power Transistors 2SB1254 Silicon PNP epitaxial planar type Darlington For power amplification Unit mm Complementary to 2SD1894 15.0 0.3 5.0 0.2 11.0 0.2 3.2 Features Optimum for 60W HiFi output 3.2 0.1 High foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat)

JMnic Product Specification Silicon PNP Power Transistors 2SB1254 DESCRIPTION With TO-3PFa package Optimum for 60W HiFi output High foward current transfer ratio Low collector saturation voltage Complement to type 2SD1894 APPLICATIONS Power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARA

isc Silicon PNP Darlington Power Transistor 2SB1254 DESCRIPTION High DC Current Gain- h = 5000(Min)@I = -6A FE C Low-Collector Saturation Voltage- V = -2.5V(Max.)@I = -6A CE(sat) C Complement to Type 2SD1894 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS

Power Transistors 2SB1252 Silicon PNP epitaxial planar type Darlington For power amplification Unit mm 10.0 0.2 4.2 0.2 Complementary to 2SD1892 5.5 0.2 2.7 0.2 Features 3.1 0.1 Optimum for 35W HiFi output High foward current transfer ratio hFE 5000 to 30000 Low collector to emitter saturation voltage VCE(sat)

Power Transistors 2SB1253 Silicon PNP epitaxial planar type Darlington For power amplification Unit mm Complementary to 2SD1893 15.0 0.3 5.0 0.2 11.0 0.2 3.2 Features Optimum for 40W HiFi output 3.2 0.1 High foward current transfer ratio hFE 5000 to 30000 Low collector to emitter saturation voltage VCE(sat)

Power Transistors 2SB1255 Silicon PNP epitaxial planar type Darlington For power amplification Unit mm Complementary to 2SD1895 15.0 0.3 5.0 0.2 11.0 0.2 3.2 Features Optimum for 90W HiFi output 3.2 0.1 High foward current transfer ratio hFE 5000 to 30000 Low collector to emitter saturation voltage VCE(sat)

JMnic Product Specification Silicon PNP Power Transistors 2SB1258 DESCRIPTION With TO-220F package Complement to type 2SD1785 High DC current gain DARLINGTON APPLICATIONS Driver for solenoid ,relay and motor and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25

JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1255 DESCRIPTION With TO-3PFa package Optimum for 90W Hi-Fi output High foward current transfer ratio hFE Low collector-emitter saturation voltage Complement to type 2SD1895 APPLICATIONS Power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(T

JMnic Product Specification Silicon PNP Power Transistors 2SB1257 DESCRIPTION With TO-220F package Complement to type 2SD2014 High DC current gain DARLINGTON APPLICATIONS Driver for solenoid ,relay and motor and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25

E (3k )(100 ) B Darlington 2SB1258 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD1785) Application Driver for Solenoid, Relay and Motor and General Purpose External Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Symbol Conditions Ratings Unit Unit 0.2 4.2 0.2 10.1 c

E (3k )(100 ) B Darlington 2SB1259 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2081) Application Driver for Solenoid, Relay and Motor and General Purpose External Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 4.2 0.2 10.1 c0.

E (2k )(650 ) B Darlington 2SB1257 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2014) Application Driver for Solenoid, Relay and Motor and General Purpose External Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Symbol Conditions Ratings 0.2 Unit Unit 5.5 0.2 15.6 0

isc Silicon PNP Darlington Power Transistor 2SB1258 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@I = -3A FE C Complement to Type 2SD1785 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Driver for solenoid, relay and motor and general purpose applications. AB

isc Silicon PNP Darlington Power Transistor 2SB1259 DESCRIPTION High DC Current Gain- h = 2000(Min)@I = -5A FE C Low-Collector Saturation Voltage- V = -1.5V(Max.)@I = -5A CE(sat) C Complement to Type 2SD2081 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio, series regulator and general purpose applicati

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB1253 DESCRIPTION High DC Current Gain- h = 5000(Min)@I = -5A FE C Low-Collector Saturation Voltage- V = -2.5V(Max.)@I = -5A CE(sat) C Complement to Type 2SD1893 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications

isc Silicon PNP Darlington Power Transistor 2SB1255 DESCRIPTION High DC Current Gain- h = 5000(Min)@I = -6A FE C Low-Collector Saturation Voltage- V = -2.5V(Max.)@I = -7A CE(sat) C Complement to Type 2SD1895 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1257 DESCRIPTION With TO-220F package Complement to type 2SD2014 High DC current gain DARLINGTON APPLICATIONS Driver for solenoid ,relay and motor and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maxim