Справочник транзисторов. 2SB1255

 

Биполярный транзистор 2SB1255 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SB1255
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 100 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 160 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 160 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 8 A
   Предельная температура PN-перехода (Tj): 175 °C
   Статический коэффициент передачи тока (hfe): 15000
   Корпус транзистора: TO126

 Аналоги (замена) для 2SB1255

 

 

2SB1255 Datasheet (PDF)

 ..1. Size:74K  panasonic
2sb1255.pdf

2SB1255
2SB1255

Power Transistors2SB1255Silicon PNP epitaxial planar type DarlingtonFor power amplificationUnit: mmComplementary to 2SD189515.0 0.3 5.0 0.211.0 0.2 3.2FeaturesOptimum for 90W HiFi output 3.2 0.1High foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):

 ..2. Size:162K  jmnic
2sb1255.pdf

2SB1255
2SB1255

JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1255 DESCRIPTION With TO-3PFa package Optimum for 90W Hi-Fi output High foward current transfer ratio hFE Low collector-emitter saturation voltage Complement to type 2SD1895 APPLICATIONS Power amplification PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(T

 ..3. Size:217K  inchange semiconductor
2sb1255.pdf

2SB1255
2SB1255

isc Silicon PNP Darlington Power Transistor 2SB1255DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@I = -6AFE CLow-Collector Saturation Voltage-: V = -2.5V(Max.)@I = -7ACE(sat) CComplement to Type 2SD1895Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLUTE MAXIMUM RATINGS

 8.1. Size:75K  panasonic
2sb1252.pdf

2SB1255
2SB1255

Power Transistors2SB1252Silicon PNP epitaxial planar type DarlingtonFor power amplificationUnit: mm10.0 0.2 4.2 0.2Complementary to 2SD18925.5 0.2 2.7 0.2Features 3.1 0.1Optimum for 35W HiFi outputHigh foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):

 8.2. Size:74K  panasonic
2sb1253.pdf

2SB1255
2SB1255

Power Transistors2SB1253Silicon PNP epitaxial planar type DarlingtonFor power amplificationUnit: mmComplementary to 2SD189315.0 0.3 5.0 0.211.0 0.2 3.2FeaturesOptimum for 40W HiFi output 3.2 0.1High foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):

 8.3. Size:74K  panasonic
2sb1254.pdf

2SB1255
2SB1255

Power Transistors2SB1254Silicon PNP epitaxial planar type DarlingtonFor power amplificationUnit: mmComplementary to 2SD189415.0 0.3 5.0 0.211.0 0.2 3.2FeaturesOptimum for 60W HiFi output 3.2 0.1High foward current transfer ratio hFELow collector to emitter saturation voltage VCE(sat):

 8.4. Size:147K  jmnic
2sb1258.pdf

2SB1255
2SB1255

JMnic Product Specification Silicon PNP Power Transistors 2SB1258 DESCRIPTION With TO-220F package Complement to type 2SD1785 High DC current gain DARLINGTON APPLICATIONS Driver for solenoid ,relay and motor and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25

 8.5. Size:154K  jmnic
2sb1254.pdf

2SB1255
2SB1255

JMnic Product Specification Silicon PNP Power Transistors 2SB1254 DESCRIPTION With TO-3PFa package Optimum for 60W HiFi output High foward current transfer ratio Low collector saturation voltage Complement to type 2SD1894 APPLICATIONS Power amplification PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARA

 8.6. Size:147K  jmnic
2sb1257.pdf

2SB1255
2SB1255

JMnic Product Specification Silicon PNP Power Transistors 2SB1257 DESCRIPTION With TO-220F package Complement to type 2SD2014 High DC current gain DARLINGTON APPLICATIONS Driver for solenoid ,relay and motor and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25

 8.7. Size:29K  sanken-ele
2sb1258.pdf

2SB1255

E(3k)(100)BDarlington 2SB1258Equivalent circuitCSilicon PNP Epitaxial Planar Transistor (Complement to type 2SD1785)Application : Driver for Solenoid, Relay and Motor and General PurposeExternal Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Symbol Conditions Ratings UnitUnit0.24.20.210.1c

 8.8. Size:30K  sanken-ele
2sb1259.pdf

2SB1255

E(3k)(100)BDarlington 2SB1259Equivalent circuitCSilicon PNP Epitaxial Planar Transistor (Complement to type 2SD2081)Application : Driver for Solenoid, Relay and Motor and General PurposeExternal Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Unit Symbol Conditions Ratings Unit 0.24.20.210.1c0.

 8.9. Size:30K  sanken-ele
2sb1257.pdf

2SB1255

E(2k)(650)BDarlington 2SB1257Equivalent circuitCSilicon PNP Epitaxial Planar Transistor (Complement to type 2SD2014)Application : Driver for Solenoid, Relay and Motor and General PurposeExternal Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Symbol Conditions Ratings 0.2Unit Unit 5.50.215.60

 8.10. Size:208K  inchange semiconductor
2sb1258.pdf

2SB1255
2SB1255

isc Silicon PNP Darlington Power Transistor 2SB1258DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@I = -3AFE CComplement to Type 2SD1785Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDriver for solenoid, relay and motor and general purposeapplications.AB

 8.11. Size:223K  inchange semiconductor
2sb1259.pdf

2SB1255
2SB1255

isc Silicon PNP Darlington Power Transistor 2SB1259DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@I = -5AFE CLow-Collector Saturation Voltage-: V = -1.5V(Max.)@I = -5ACE(sat) CComplement to Type 2SD2081Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio, series regulator and general purposeapplicati

 8.12. Size:191K  inchange semiconductor
2sb1253.pdf

2SB1255
2SB1255

INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistor 2SB1253DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@I = -5AFE CLow-Collector Saturation Voltage-: V = -2.5V(Max.)@I = -5ACE(sat) CComplement to Type 2SD1893Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for power amplifier applications

 8.13. Size:223K  inchange semiconductor
2sb1254.pdf

2SB1255
2SB1255

isc Silicon PNP Darlington Power Transistor 2SB1254DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@I = -6AFE CLow-Collector Saturation Voltage-: V = -2.5V(Max.)@I = -6ACE(sat) CComplement to Type 2SD1894Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLUTE MAXIMUM RATINGS

 8.14. Size:114K  inchange semiconductor
2sb1257.pdf

2SB1255
2SB1255

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1257 DESCRIPTION With TO-220F package Complement to type 2SD2014 High DC current gain DARLINGTON APPLICATIONS Driver for solenoid ,relay and motor and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maxim

Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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