2SB1260 - описание и поиск аналогов

Power Transistor ( 80V, 1A) 2SB1260 / 2SB1181 / 2SB1241 Features Dimensions (Unit mm) 1) Hight breakdown voltage and high current. 2SB1260 2SB1181 BVCEO= 80V, IC = 1A 2.3+0.2 6.5 0.2 2) Good hFE linearty. C0.5 5.1+0.2 3) Low VCE(sat). 0.5 0.1 4.5+0.2 1.5 Complements the 2SD1898 / 2SD1863 / 2SD1733. 1.6 0.1 0.65 0.1 0.75 (1) (2) (3) 0.9 0

Power Transistor (-80V, -1A) 2SB1260 / 2SB1181 Features Dimensions (Unit mm) 1) Hight breakdown voltage and high current. 2SB1260 2SB1181 BVCEO= -80V, IC = -1A 2.3+0.2 6.5 0.2 2) Good hFE linearty. C0.5 5.1+0.2 0.5 0.1 3) Low VCE(sat). 4.5+0.2 1.5 4) Complements the 2SD1898 / 2SD1733. 1.6 0.1 0.65 0.1 0.75 (1) (2) (3) 0.9 0.4+0.1 0.55 0.1 0.4 0.1 0.5

2SB1260 / 2SB1181 Datasheet PNP -1.0A -80V Middle Power Transistor lOutline Collector MPT3 CPT3 Parameter Value VCEO -80V Base Collector IC -1.0A Emitter Base Emitter 2SB1260 2SB1181 lFeatures (SC-62) (SC-63) 1) Suitable for Middle Power Driver 2) Complementary NPN Types 2SD1898 / 2SD1733 3) Low VCE(sat) VCE(sat)= -0.4V Max. (IC/IB= -500mA/

UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. * BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3 2SB1260G-x-A

2SB1260 -1 A, -80 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES 4 High breakdown voltage and high current BVCEO=-80V, IC=-1A 1 Good hFE linearity 2 3 B C A Complements to 2SD1898 E E C PACKAGE INFORMATION B D Weight 0.05 g (approximately) F G

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1260 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR Power Transistor High Voltage and Current 3. EMITTER Low Collector-emitter saturation voltage Complements the 2SD1898 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Coll

2SB1 260 TRANSISTOR(PNP) SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Power Transistor High Voltage and Current 3. EMITTER Low Collector-emitter saturation voltage Complements the 2SD1898 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V

2SB1260 PNP Plastic-Encapsulate Transistor SOT-89 1 2 1. BASE 3 2. COLLECTOR 3. EMITTER ABSOLUTE MAXIMUM RATINGS(Ta=25%C) Rating Unit Symbol Value -80 Vdc Collector-Emitter Voltage VCEO Vdc Collector-Base Voltage -80 VCBO Emitter-Base Voltage VEBO -5.0 Vdc I Adc(DC) C 1.0 Collector Current I 2.0 Adc (Pulse) CP PC Collector Power Dissipation 0.5 W Tj , Tstg %C Jun

FM120-M WILLAS 2SB1260 THRU SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers TRANSISTOR (PNP) better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted applicati

SMD Type Transistors PNP Transistors 2SB1260 1.70 0.1 Features Hight breakdown voltage and high current. Low collector-emitter saturation voltage VCE(sat) Good hFE linearty. 0.42 0.1 0.46 0.1 Complementary to 2SD1898 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Colle

Plastic-Encapsulate Transistors FEATURES 2SB1260(PNP) High breakdown voltage and high current. BVCEO=-80V,IC=-1A Good hFEVLinearity. Low VCE(sat). Complements the 2SD1898. Marking ZL Maximum Ratings (Ta=25 unless otherwise noted) 1. BASE Parameter Symbol Value Unit 2. COLLECTO SOT-89 Collector-Base Voltage VCBO -80 V 3. EMITTER Collector-Emitter Voltage VCEO -80 V

SMD Type Transistors Power Transistor 2SB1260 Features High breakdown voltage and high current.BVCEO=-80V, IC=-1A Good hFE linearity. Low VCE(sat). Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -5 V Collector current IC -1 A

SMD Type Transistors Power Transistor 2SB1260 Features High breakdown voltage and high current.BVCEO=-80V, IC=-1A Good hFE linearity. Low VCE(sat). Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -5 V Collector current IC -1 A

SMD Type Transistors Power Transistor 2SB1260 Features High breakdown voltage and high current.BVCEO=-80V, IC=-1A Good hFE linearity. Low VCE(sat). Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -5 V Collector current IC -1 A