Справочник транзисторов. 2SB1264

 

Биполярный транзистор 2SB1264 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SB1264
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.6 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 250 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 200 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.07 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 50 MHz
   Ёмкость коллекторного перехода (Cc): 10(max) pf
   Статический коэффициент передачи тока (hfe): 30
   Корпус транзистора: SC71

 Аналоги (замена) для 2SB1264

 

 

2SB1264 Datasheet (PDF)

 ..1. Size:273K  1
2sb1264.pdf

2SB1264
2SB1264

/ecdcle stage.neaunniettnnioacmaintenance typesplaned maintenance typeMidiscontinued typeplaned discontinued typedDMaintenance/Discontinued includes following four Product lifecyhttp://www.semicon.panasonic.co.jp/en/Please visit following URL about latest information./ecdcle stage.neaunniettnnio

 8.1. Size:113K  sanyo
2sb1267.pdf

2SB1264
2SB1264

 8.2. Size:106K  sanyo
2sb1266.pdf

2SB1264
2SB1264

 8.3. Size:119K  sanyo
2sb1268.pdf

2SB1264
2SB1264

 8.4. Size:99K  sanyo
2sb1269.pdf

2SB1264
2SB1264

 8.5. Size:295K  nec
2sb1261-z.pdf

2SB1264
2SB1264

 8.6. Size:268K  nec
2sb1261-k.pdf

2SB1264
2SB1264

 8.7. Size:140K  rohm
2sb1260 2sb1181 2sb1241.pdf

2SB1264
2SB1264

Power Transistor (80V, 1A) 2SB1260 / 2SB1181 / 2SB1241 Features Dimensions (Unit : mm) 1) Hight breakdown voltage and high current. 2SB1260 2SB1181BVCEO=80V, IC = 1A 2.3+0.26.50.22) Good hFE linearty. C0.55.1+0.23) Low VCE(sat). 0.50.14.5+0.21.5Complements the 2SD1898 / 2SD1863 / 2SD1733. 1.60.10.650.1 0.75(1) (2) (3)0.90

 8.8. Size:148K  rohm
2sb1260.pdf

2SB1264
2SB1264

Power Transistor (-80V, -1A) 2SB1260 / 2SB1181 Features Dimensions (Unit : mm) 1) Hight breakdown voltage and high current. 2SB1260 2SB1181BVCEO= -80V, IC = -1A 2.3+0.26.50.22) Good hFE linearty. C0.55.1+0.20.50.13) Low VCE(sat). 4.5+0.21.54) Complements the 2SD1898 / 2SD1733. 1.60.10.650.10.75(1) (2) (3)0.90.4+0.10.550.10.40.1 0.5

 8.9. Size:955K  rohm
2sb1260 2sb1181.pdf

2SB1264
2SB1264

2SB1260 / 2SB1181Datasheet PNP -1.0A -80V Middle Power TransistorlOutlineCollector MPT3 CPT3Parameter ValueVCEO-80VBase Collector IC-1.0AEmitter Base Emitter 2SB1260 2SB1181 lFeatures(SC-62) (SC-63) 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD1898 / 2SD17333) Low VCE(sat)VCE(sat)= -0.4V Max. (IC/IB= -500mA/

 8.10. Size:297K  utc
2sb1260.pdf

2SB1264
2SB1264

UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. * BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 32SB1260G-x-A

 8.11. Size:187K  secos
2sb1260.pdf

2SB1264
2SB1264

2SB1260 -1 A, -80 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES 4 High breakdown voltage and high current BVCEO=-80V, IC=-1A 1 Good hFE linearity 23B C A Complements to 2SD1898 E ECPACKAGE INFORMATION B DWeight: 0.05 g (approximately) F G

 8.12. Size:1639K  jiangsu
2sb1261.pdf

2SB1264
2SB1264

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors2SB1261 TRANSISTOR (PNP)TO-252-2L FEATURES 1. BASE Low VCE(sat) High DC Current Gain 2. COLLECTOR2133. EMITTER Equivalent Circuit B1261=Device code B 1 2 6 1Solid dot=Green moldinn compound device, XXXXif none,the normal deviceXXXX=CodeMAXIMUM RATINGS (Ta=

 8.13. Size:137K  jiangsu
2sb1260.pdf

2SB1264

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1260 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR Power Transistor High Voltage and Current 3. EMITTER Low Collector-emitter saturation voltage Complements the 2SD1898 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Coll

 8.14. Size:579K  jiangsu
2sb1261-z.pdf

2SB1264
2SB1264

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors TO-251-3L 2SB1261-Z TRANSISTOR (PNP) FEATURES 1. BASE High hFE Low VCE(sat) 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base V

 8.15. Size:215K  htsemi
2sb1260.pdf

2SB1264

2SB1 260TRANSISTOR(PNP) SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Power Transistor High Voltage and Current 3. EMITTER Low Collector-emitter saturation voltage Complements the 2SD1898 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V

 8.16. Size:300K  lge
2sb1261.pdf

2SB1264
2SB1264

2SB1261 Transistor(PNP)1. BASE TO-252-2L 1 2. COLLECTOR 3. EMITTER Features High hFE hFE=100 to 400 Low vCE(sat) vCE(sat) 0.3V Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collect

 8.17. Size:326K  lge
2sb1261-z.pdf

2SB1264
2SB1264

2SB1261-Z(PNP) TO-251/TO-252-2L TransistorTO-2511. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features High hFE hFE=100 to 400 Low vCE(sat) vCE(sat) 0.3V MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2LSymbol Parameter Value UnitsVCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current -

 8.18. Size:114K  wietron
2sb1260.pdf

2SB1264
2SB1264

2SB1260PNP Plastic-Encapsulate TransistorSOT-89121. BASE32. COLLECTOR3. EMITTERABSOLUTE MAXIMUM RATINGS(Ta=25%C)Rating UnitSymbolValue-80VdcCollector-Emitter VoltageVCEOVdcCollector-Base Voltage -80VCBOEmitter-Base Voltage VEBO -5.0 VdcIAdc(DC)C1.0Collector CurrentI2.0 Adc (Pulse)CPPCCollector Power Dissipation 0.5 WTj , Tstg %CJun

 8.19. Size:356K  willas
2sb1260.pdf

2SB1264
2SB1264

FM120-M WILLAS2SB1260 THRUSOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offersTRANSISTOR (PNP) better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted applicati

 8.20. Size:614K  jilin sino
2sb1261.pdf

2SB1264
2SB1264

PNP PNP Epitaxial Silicon Transistor R2SB1261 MAIN CHARACTERISTICS I -3A CV -60V CEOP 2W CAPPLICATIONS Designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES hFE=-100-400

 8.21. Size:861K  blue-rocket-elect
2sb1261.pdf

2SB1264
2SB1264

2SB1261 Rev.E May.-2016 DATA SHEET / Descriptions TO-252 PNP Silicon PNP transistor in a TO-252 Plastic Package. / Features hFE Excellent hFE linearity, low VCE(sat), high PC. / Applications Audio f

 8.22. Size:479K  blue-rocket-elect
2sb1261l.pdf

2SB1264
2SB1264

2SB1261L(BR3CA1261QF) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126F PNP Silicon PNP transistor in a TO-126F Plastic Package. / Features hFE Excellent hFE linearity, low VCE(sat), high PC. / Applications

 8.23. Size:984K  kexin
2sb1260.pdf

2SB1264
2SB1264

SMD Type TransistorsPNP Transistors2SB12601.70 0.1 Features Hight breakdown voltage and high current. Low collector-emitter saturation voltage VCE(sat) Good hFE linearty.0.42 0.10.46 0.1 Complementary to 2SD18981.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Colle

 8.24. Size:805K  kexin
2sb1266.pdf

2SB1264
2SB1264

SMD Type TransistorsPNP Transistors2SB1266TO-252Unit: mm+0.156.50-0.15+0.1 Features 2.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Suitable for sets whose height is restricted Complementary to 2SD19020.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Un

 8.25. Size:50K  kexin
2sb1260-r.pdf

2SB1264

SMD Type TransistorsPower Transistor2SB1260FeaturesHigh breakdown voltage and highcurrent.BVCEO=-80V, IC=-1AGood hFE linearity.Low VCE(sat).Epitaxial planar typePNP silicon transistorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -80 VCollector-emitter voltage VCEO -80 VEmitter-base voltage VEBO -5 VCollector current IC -1 A

 8.26. Size:1046K  kexin
2sb1261-z.pdf

2SB1264
2SB1264

SMD Type TransistorsPNP Transistors2SB1261-ZTO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features High hFE hFE = 100 to 400 Low VCE(sat) VCE(sat) 0.3 V0.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Coll

 8.27. Size:50K  kexin
2sb1260-q.pdf

2SB1264

SMD Type TransistorsPower Transistor2SB1260FeaturesHigh breakdown voltage and highcurrent.BVCEO=-80V, IC=-1AGood hFE linearity.Low VCE(sat).Epitaxial planar typePNP silicon transistorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -80 VCollector-emitter voltage VCEO -80 VEmitter-base voltage VEBO -5 VCollector current IC -1 A

 8.28. Size:50K  kexin
2sb1260-p.pdf

2SB1264

SMD Type TransistorsPower Transistor2SB1260FeaturesHigh breakdown voltage and highcurrent.BVCEO=-80V, IC=-1AGood hFE linearity.Low VCE(sat).Epitaxial planar typePNP silicon transistorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -80 VCollector-emitter voltage VCEO -80 VEmitter-base voltage VEBO -5 VCollector current IC -1 A

 8.29. Size:969K  slkor
2sb1261-m 2sb1261-l 2sb1261-k.pdf

2SB1264
2SB1264

2SB1261Silicon PNP Power TransistorsDESCRIPTIONLow Collector Saturation VoltageHigh Power Dissipation-: P = 10W(Max)@T =25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio amplifier and switching,especially in hybrid integrated circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

 8.30. Size:174K  cn hottech
2sb1260.pdf

2SB1264
2SB1264

Plastic-Encapsulate TransistorsFEATURES2SB1260(PNP) High breakdown voltage and high current. BVCEO=-80V,IC=-1A Good hFEVLinearity. Low VCE(sat). Complements the 2SD1898.Marking: ZLMaximum Ratings (Ta=25 unless otherwise noted)1. BASEParameter Symbol Value Unit2. COLLECTO SOT-89Collector-Base Voltage VCBO -80 V3. EMITTERCollector-Emitter Voltage VCEO -80 V

 8.31. Size:211K  inchange semiconductor
2sb1261-k.pdf

2SB1264
2SB1264

isc Silicon NPN Power Transistors 2SB1261-KDESCRIPTIONLow Collector Saturation VoltageHigh Power Dissipation-: P = 10W(Max)@T =25C CComplement to Type 2SD1899-KMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio amplifier and switching,especially in hybrid integrated circuits.ABSOLUTE MAXIMUM

Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
Back to Top