Биполярный транзистор 2SB1264 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SB1264
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.6 W
Макcимально допустимое напряжение коллектор-база (Ucb): 250 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 200 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.07 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 50 MHz
Ёмкость коллекторного перехода (Cc): 10(max) pf
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора: SC71
2SB1264 Datasheet (PDF)
2sb1264.pdf
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2sb1260 2sb1181 2sb1241.pdf
Power Transistor (80V, 1A) 2SB1260 / 2SB1181 / 2SB1241 Features Dimensions (Unit : mm) 1) Hight breakdown voltage and high current. 2SB1260 2SB1181BVCEO=80V, IC = 1A 2.3+0.26.50.22) Good hFE linearty. C0.55.1+0.23) Low VCE(sat). 0.50.14.5+0.21.5Complements the 2SD1898 / 2SD1863 / 2SD1733. 1.60.10.650.1 0.75(1) (2) (3)0.90
2sb1260.pdf
Power Transistor (-80V, -1A) 2SB1260 / 2SB1181 Features Dimensions (Unit : mm) 1) Hight breakdown voltage and high current. 2SB1260 2SB1181BVCEO= -80V, IC = -1A 2.3+0.26.50.22) Good hFE linearty. C0.55.1+0.20.50.13) Low VCE(sat). 4.5+0.21.54) Complements the 2SD1898 / 2SD1733. 1.60.10.650.10.75(1) (2) (3)0.90.4+0.10.550.10.40.1 0.5
2sb1260 2sb1181.pdf
2SB1260 / 2SB1181Datasheet PNP -1.0A -80V Middle Power TransistorlOutlineCollector MPT3 CPT3Parameter ValueVCEO-80VBase Collector IC-1.0AEmitter Base Emitter 2SB1260 2SB1181 lFeatures(SC-62) (SC-63) 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD1898 / 2SD17333) Low VCE(sat)VCE(sat)= -0.4V Max. (IC/IB= -500mA/
2sb1260.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. * BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 32SB1260G-x-A
2sb1260.pdf
2SB1260 -1 A, -80 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES 4 High breakdown voltage and high current BVCEO=-80V, IC=-1A 1 Good hFE linearity 23B C A Complements to 2SD1898 E ECPACKAGE INFORMATION B DWeight: 0.05 g (approximately) F G
2sb1261.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors2SB1261 TRANSISTOR (PNP)TO-252-2L FEATURES 1. BASE Low VCE(sat) High DC Current Gain 2. COLLECTOR2133. EMITTER Equivalent Circuit B1261=Device code B 1 2 6 1Solid dot=Green moldinn compound device, XXXXif none,the normal deviceXXXX=CodeMAXIMUM RATINGS (Ta=
2sb1260.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1260 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR Power Transistor High Voltage and Current 3. EMITTER Low Collector-emitter saturation voltage Complements the 2SD1898 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Coll
2sb1261-z.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors TO-251-3L 2SB1261-Z TRANSISTOR (PNP) FEATURES 1. BASE High hFE Low VCE(sat) 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base V
2sb1260.pdf
2SB1 260TRANSISTOR(PNP) SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Power Transistor High Voltage and Current 3. EMITTER Low Collector-emitter saturation voltage Complements the 2SD1898 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V
2sb1261.pdf
2SB1261 Transistor(PNP)1. BASE TO-252-2L 1 2. COLLECTOR 3. EMITTER Features High hFE hFE=100 to 400 Low vCE(sat) vCE(sat) 0.3V Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collect
2sb1261-z.pdf
2SB1261-Z(PNP) TO-251/TO-252-2L TransistorTO-2511. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features High hFE hFE=100 to 400 Low vCE(sat) vCE(sat) 0.3V MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2LSymbol Parameter Value UnitsVCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current -
2sb1260.pdf
2SB1260PNP Plastic-Encapsulate TransistorSOT-89121. BASE32. COLLECTOR3. EMITTERABSOLUTE MAXIMUM RATINGS(Ta=25%C)Rating UnitSymbolValue-80VdcCollector-Emitter VoltageVCEOVdcCollector-Base Voltage -80VCBOEmitter-Base Voltage VEBO -5.0 VdcIAdc(DC)C1.0Collector CurrentI2.0 Adc (Pulse)CPPCCollector Power Dissipation 0.5 WTj , Tstg %CJun
2sb1260.pdf
FM120-M WILLAS2SB1260 THRUSOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offersTRANSISTOR (PNP) better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted applicati
2sb1261.pdf
PNP PNP Epitaxial Silicon Transistor R2SB1261 MAIN CHARACTERISTICS I -3A CV -60V CEOP 2W CAPPLICATIONS Designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES hFE=-100-400
2sb1261.pdf
2SB1261 Rev.E May.-2016 DATA SHEET / Descriptions TO-252 PNP Silicon PNP transistor in a TO-252 Plastic Package. / Features hFE Excellent hFE linearity, low VCE(sat), high PC. / Applications Audio f
2sb1261l.pdf
2SB1261L(BR3CA1261QF) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126F PNP Silicon PNP transistor in a TO-126F Plastic Package. / Features hFE Excellent hFE linearity, low VCE(sat), high PC. / Applications
2sb1260.pdf
SMD Type TransistorsPNP Transistors2SB12601.70 0.1 Features Hight breakdown voltage and high current. Low collector-emitter saturation voltage VCE(sat) Good hFE linearty.0.42 0.10.46 0.1 Complementary to 2SD18981.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Colle
2sb1266.pdf
SMD Type TransistorsPNP Transistors2SB1266TO-252Unit: mm+0.156.50-0.15+0.1 Features 2.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Suitable for sets whose height is restricted Complementary to 2SD19020.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Un
2sb1260-r.pdf
SMD Type TransistorsPower Transistor2SB1260FeaturesHigh breakdown voltage and highcurrent.BVCEO=-80V, IC=-1AGood hFE linearity.Low VCE(sat).Epitaxial planar typePNP silicon transistorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -80 VCollector-emitter voltage VCEO -80 VEmitter-base voltage VEBO -5 VCollector current IC -1 A
2sb1261-z.pdf
SMD Type TransistorsPNP Transistors2SB1261-ZTO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features High hFE hFE = 100 to 400 Low VCE(sat) VCE(sat) 0.3 V0.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Coll
2sb1260-q.pdf
SMD Type TransistorsPower Transistor2SB1260FeaturesHigh breakdown voltage and highcurrent.BVCEO=-80V, IC=-1AGood hFE linearity.Low VCE(sat).Epitaxial planar typePNP silicon transistorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -80 VCollector-emitter voltage VCEO -80 VEmitter-base voltage VEBO -5 VCollector current IC -1 A
2sb1260-p.pdf
SMD Type TransistorsPower Transistor2SB1260FeaturesHigh breakdown voltage and highcurrent.BVCEO=-80V, IC=-1AGood hFE linearity.Low VCE(sat).Epitaxial planar typePNP silicon transistorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -80 VCollector-emitter voltage VCEO -80 VEmitter-base voltage VEBO -5 VCollector current IC -1 A
2sb1261-m 2sb1261-l 2sb1261-k.pdf
2SB1261Silicon PNP Power TransistorsDESCRIPTIONLow Collector Saturation VoltageHigh Power Dissipation-: P = 10W(Max)@T =25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio amplifier and switching,especially in hybrid integrated circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
2sb1260.pdf
Plastic-Encapsulate TransistorsFEATURES2SB1260(PNP) High breakdown voltage and high current. BVCEO=-80V,IC=-1A Good hFEVLinearity. Low VCE(sat). Complements the 2SD1898.Marking: ZLMaximum Ratings (Ta=25 unless otherwise noted)1. BASEParameter Symbol Value Unit2. COLLECTO SOT-89Collector-Base Voltage VCBO -80 V3. EMITTERCollector-Emitter Voltage VCEO -80 V
2sb1261-k.pdf
isc Silicon NPN Power Transistors 2SB1261-KDESCRIPTIONLow Collector Saturation VoltageHigh Power Dissipation-: P = 10W(Max)@T =25C CComplement to Type 2SD1899-KMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio amplifier and switching,especially in hybrid integrated circuits.ABSOLUTE MAXIMUM
Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050