2SB1273S - описание и поиск аналогов

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1273 DESCRIPTION High Reliability Low Collector Saturation Voltage V = -1.0V(Max)@I = -2A CE(sat) C Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25

Ordering number ENN2246B 2SB1274/2SD1913 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1274/2SD1913 60V/3A Low-Frequency Power Amplifier Applications Applications Package Dimensions General power amplifier. unit mm 2041A [2SB1274/2SD1913] 4.5 10.0 2.8 Features 3.2 Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High br

Power Transistor ( 160V, 1.5A) 2SB1275 / 2SB1236A Features Dimensions (Unit mm) 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. 2SB1275 5.5 1.5 (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 0.9 4) Complements the 2SD1918 / 2SD1857A. C0.5 0.8Min. 1.5 2.5 9.5 (1) Base(Gate) Absolute maximum ratings (Ta =

Transistors Medium power Transistor(*32V,*2A) 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FFeatures FExternal dimensions (Unit mm) 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M. FStructure Epitaxial planar type PNP silicon transistor (96-131-B24) 215 2SB1188

2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A Transistors Transistors 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A (96-612-A58) (96-744-C58) 277

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors 2SB1274 TRANSISTOR (PNP) TO-220-3L FEATURES 1. BASE Wide ASO (Adoption of MBIT Process). 2. COLLECTOR Low Saturation Voltage. 3. EMITTER High Reliability. High Breakdown Voltage. Equivalent Circuit B1274=Device code Solid dot=Green moldinn compound device, if none,th

2SB1274(PNP) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High breakdown voltage. MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector- Base Voltage -60 V VCEO Collector-E

SMD Type Transistors PNP Transistors 2SB1275 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 Features 0.50 -0.7 High voltage VCEO= -160V Suitable for Middle Power Driver Complementary to 2SD1918 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Pa

2SB1274(3CA1274) PNP /SILICON PNP TRANSISTOR Purpose Low frequency power amplifier applications. Features High V ,low saturation voltage, wide ASO. CEO /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V CBO

isc Silicon PNP Power Transistor 2SB1275 DESCRIPTION Suitable for middle power drivers High voltage V =-160V CEO Complementary NPN types 2SD1918 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Motor drivers,LED driver,Power supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Col

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1274 DESCRIPTION With TO-220F package Complement to type 2SD1913 High reliability. High breakdown voltage Low saturation voltage. Wide area of safe operation APPLICATIONS 60V/3A low-frequency power amplifier General power amplifier applications PINNING PIN DESCRIPTION 1 Emitt