Биполярный транзистор 2SB1295 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SB1295
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 15 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 15 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.8 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 300 MHz
Ёмкость коллекторного перехода (Cc): 15 pf
Статический коэффициент передачи тока (hfe): 135
Корпус транзистора: TO236
2SB1295 Datasheet (PDF)
2sb1295.pdf
SMD Type TransistorsPNP Transistors2SB1295SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Large current capacity. Low collector to emitter saturation voltage.1 2 Complimentary to 2SD1935.+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - B
2sb1294.pdf
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2sb1297 e.pdf
Transistor2SB1297Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SD19375.0 0.2 4.0 0.2FeaturesExtremely satisfactory linearity of the forward current transferratio hFE.High transition frequency fT.Makes up a complementary pair with 2SD1937, which is opti-0.7 0.1mum for the pre-driver stage of a 40 to 60W output amp
2sb1297.pdf
Transistor2SB1297Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SD19375.0 0.2 4.0 0.2FeaturesExtremely satisfactory linearity of the forward current transferratio hFE.High transition frequency fT.Makes up a complementary pair with 2SD1937, which is opti-0.7 0.1mum for the pre-driver stage of a 40 to 60W output amp
2sb1299.pdf
Power Transistors2SB1299Silicon PNP epitaxial planar typeFor power amplificationUnit: mmComplementary to 2SD127310.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesHigh foward current transfer ratio hFE 3.1 0.1Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0.1Absolute
2sb1293.pdf
isc Silicon PNP Power Transistor 2SB1293DESCRIPTIONHigh Collector Current:: I = -5ACLow Collector Saturation Voltage: V = -1.0V(Max)@I = -3ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1896Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE
2sb1292.pdf
isc Silicon PNP Power Transistor 2SB1292DESCRIPTIONHigh Collector Current:: I = -5ACLow Collector Saturation Voltage: V = -1.5V(Max)@I = -3ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1832Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE
2sb1290.pdf
isc Silicon PNP Power Transistor 2SB1290DESCRIPTIONHigh Collector Current:: I = -7ACLow Collector Saturation Voltage: V = -1.0V(Max)@I = -4ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1833Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE
2sb1294.pdf
isc Silicon PNP Power Transistor 2SB1294DESCRIPTIONHigh Collector Current:: I = -5ACLow Collector Saturation Voltage: V = -1.0V(Max)@I = -3ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1897Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE
2sb1291.pdf
isc Silicon PNP Power Transistor 2SB1291DESCRIPTIONHigh Collector Current: I = -5ACLow Collector Saturation Voltage: V = -1.5V(Max)@I = -3ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1720Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050