Биполярный транзистор 2SB1308Q - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SB1308Q
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 200 °C
Граничная частота коэффициента передачи тока (ft): 120 MHz
Статический коэффициент передачи тока (hfe): 120
Корпус транзистора: SOT89
2SB1308Q Datasheet (PDF)
2sb1308 2sd1963.pdf
2SB1308TransistorsTransistors2SD1963(94S-166-B204)(94S-342-D204)290Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference o
2sb1308.pdf
2SB1 308TRANSISTOR SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Power Transistor Excellent DC current Gain 3. EMITTER Low Collector-emitter Saturation Voltage MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -6 V IC Collector Current -3 A PC C
2sb1308.pdf
FM120-M WILLASTHRU2SB1308 SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPa c kage outlineFeaturesTRANSISTOR (PNP) esign, excellent power dissipation offers Batch process dSOT-89 better reverse leakage current and thermal resistance.FEATURES SOD-123H Low p Powe
2sb1308-r.pdf
SMD Type TransistorsPower Transistor2SB1308FeaturesLow saturation voltage, typicallyVCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A.Excellent DC current gain characteristics.Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -30 VCollector-emitter voltage VCEO -20 VEmitter-base voltage VEBO -6 VCollector current IC -3 ACollector
2sb1308-q.pdf
SMD Type TransistorsPower Transistor2SB1308FeaturesLow saturation voltage, typicallyVCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A.Excellent DC current gain characteristics.Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -30 VCollector-emitter voltage VCEO -20 VEmitter-base voltage VEBO -6 VCollector current IC -3 ACollector
2sb1308.pdf
SMD Type TransistorsPNP Transistors2SB13081.70 0.1 Features Power Transistor Excellent DC current Gain Low Collector-emitter Saturation Voltage0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltage
2sb1308-p.pdf
SMD Type TransistorsPower Transistor2SB1308FeaturesLow saturation voltage, typicallyVCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A.Excellent DC current gain characteristics.Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -30 VCollector-emitter voltage VCEO -20 VEmitter-base voltage VEBO -6 VCollector current IC -3 ACollector
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
