Справочник транзисторов. 2SB1338

 

Биполярный транзистор 2SB1338 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SB1338
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 30 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 150 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 150 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
   Макcимальный постоянный ток коллектора (Ic): 2 A
   Предельная температура PN-перехода (Tj): 175 °C
   Статический коэффициент передачи тока (hfe): 120
   Корпус транзистора: TO220

 Аналоги (замена) для 2SB1338

 

 

2SB1338 Datasheet (PDF)

 8.1. Size:57K  rohm
2sb1335 1-2.pdf

2SB1338
2SB1338

 8.2. Size:38K  rohm
2sb1335.pdf

2SB1338

2SB1335TransistorsTransistors2SD1855(94L-356-B14)(94L-878-D14)279

 8.3. Size:110K  rohm
2sb1334.pdf

2SB1338
2SB1338

 8.4. Size:211K  inchange semiconductor
2sb1339.pdf

2SB1338
2SB1338

isc Silicon PNP Darlington Power Transistor 2SB1339DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOHigh DC Current Gain-: h =1000(Min)@ (V = -3V, I = -2A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAXIMUM RATINGS(T =25

 8.5. Size:89K  inchange semiconductor
2sb1334a.pdf

2SB1338
2SB1338

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1334A DESCRIPTION With TO-220 package Wide area of safe operation Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2mounting base Fig.1 simplified outline (TO-220)

 8.6. Size:218K  inchange semiconductor
2sb1335.pdf

2SB1338
2SB1338

isc Silicon PNP Power Transistor 2SB1335DESCRIPTIONHigh Collector Current:: I = -4ACLow Collector Saturation Voltage: V = -1.5V(Max)@I = -3ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1855Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE

 8.7. Size:217K  inchange semiconductor
2sb1334.pdf

2SB1338
2SB1338

isc Silicon PNP Power Transistor 2SB1334DESCRIPTIONHigh Collector Current:: I = -4ACLow Collector Saturation Voltage: V = -1.5V(Max)@I = -3ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1778Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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