2SB1349 - параметры, поиск аналогов, даташиты транзистора

Биполярный транзистор 2SB1349 Даташит. Аналоги

   Наименование производителя: 2SB1349
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.4 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 200 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 200 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 145 °C
   Статический коэффициент передачи тока (hfe): 180
   Корпус транзистора: TO92

Аналог (замена) для 2SB1349

- подбор ⓘ биполярного транзистора по параметрам

2SB1349 Datasheet (PDF)

8.1. Size:39K rohm
2sb1342.pdf pdf_icon

2SB1474 / 2SB1342TransistorsTransistors2SD1933(94S-181-B400)(94L-906-D400)298

8.2. Size:38K rohm
2sb1344.pdf pdf_icon

2SB1344TransistorsTransistors2SD2025(94L-374-B403)(94L-969-D403)299

8.3. Size:58K rohm
2sb1340 1-2.pdf pdf_icon

8.4. Size:38K rohm
2sb1340.pdf pdf_icon

2SB1340TransistorsTransistors2SD1889(96-650-B88)(96-765-D88)288

8.5. Size:53K panasonic
2sb1347.pdf pdf_icon

Power Transistors2SB1347Silicon PNP triple diffusion planar typeFor high power amplificationUnit: mmComplementary to 2SD2029 3.3 0.220.0 0.5 5.0 0.33.0FeaturesSatisfactory foward current transfer ratio hFE vs. collector cur-rent IC characteristicsWide area of safe operation (ASO) 1.5High transition frequency fTOptimum for the output stage of a HiFi audio am

8.6. Size:217K inchange semiconductor
2sb1346.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1346DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SD2027Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency and general purposeamplifier applications.ABSOLUTE MAX

8.7. Size:219K inchange semiconductor
2sb1347.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1347DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -160V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SD2029Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsOptimum for the output stage of a HiFi audio amplifierABSOLUTE MAXIMUM RATING

8.8. Size:215K inchange semiconductor
2sb1342.pdf pdf_icon

isc Silicon PNP Darlington Power Transistor 2SB1342DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -2A)FE CE CComplement to Type 2SD1933Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM

8.9. Size:214K inchange semiconductor
2sb1344.pdf pdf_icon

isc Silicon PNP Darlington Power Transistor 2SB1344DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -2A)FE CE CComplement to Type 2SD2025Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM

8.10. Size:213K inchange semiconductor
2sb1341.pdf pdf_icon

isc Silicon PNP Darlington Power Transistor 2SB1341DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -2A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

8.11. Size:213K inchange semiconductor
2sb1343.pdf pdf_icon

isc Silicon PNP Darlington Power Transistor 2SB1343DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -2A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

8.12. Size:214K inchange semiconductor
2sb1340.pdf pdf_icon

isc Silicon PNP Darlington Power Transistor 2SB1340DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOHigh DC Current Gain-: h = 2000(Min)@ (V = -3V, I = -2A)FE CE CComplement to Type 2SD1889APPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -120 VCB

8.13. Size:218K inchange semiconductor
2sb1345.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1345DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -5ACE(sat) CGood Linearity of hFEComplement to Type 2SD2062With TO-3PN packageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower driver and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

Другие транзисторы... 2SB1341 , 2SB1342 , 2SB1343 , 2SB1344 , 2SB1345 , 2SB1346 , 2SB1347 , 2SB1348 , 13005 , 2SB135 , 2SB1351 , 2SB1352 , 2SB1353 , 2SB1354 , 2SB1355 , 2SB1356 , 2SB1357 .