Биполярный транзистор 2SB1366 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SB1366
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 175 °C
Граничная частота коэффициента передачи тока (ft): 4.5 MHz
Статический коэффициент передачи тока (hfe): 120
Корпус транзистора: TO220
2SB1366 Datasheet (PDF)
2n3904 2n3906 2n5401 2n5551 2sa1271 2sa1273 2sa1275 2sa1276 2sa1366 2sa1657 2sa1658 2sb1366 2sb988 2sc3190 2sc3191 2sc3192.pdf
2sb1366.pdf
isc Silicon PNP Power Transistor 2SB1366DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOCollector Power Dissipation-: P = 25 W@ T = 25C CLow Collector Saturation Voltage-: V = -1.0V(Max)@ (I = -2A, I = -0.2A)CE(sat) C BComplement to Type 2SD2058Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATI
2sb1366f-o.pdf
MCCTMMicro Commercial Components2SB1366F-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SB1366F-YPhone: (818) 701-4933Fax: (818) 701-4939Features Epoxy meets UL 94 V-0 flammability ratingPNP Silicon Moisure Sensitivity Level 1 Low VCE(SAT):VCE(SAT)=-1.0V(Max.)(IC/IB=-2A/-0.2A)Power Transistors Lead Free Finish/RoHS Compliant (No
2sb1366f-y.pdf
MCCTMMicro Commercial Components2SB1366F-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SB1366F-YPhone: (818) 701-4933Fax: (818) 701-4939Features Epoxy meets UL 94 V-0 flammability ratingPNP Silicon Moisure Sensitivity Level 1 Low VCE(SAT):VCE(SAT)=-1.0V(Max.)(IC/IB=-2A/-0.2A)Power Transistors Lead Free Finish/RoHS Compliant (No
2sb1361.pdf
Power Transistors2SB1361Silicon PNP triple diffusion planar typeFor high power amplificationUnit: mmComplementary to 2SD205215.0 0.3 5.0 0.2Features11.0 0.2 3.2Satisfactory foward current transfer ratio hFE vs. collector cur-rent IC characteristics 3.2 0.1Wide area of safe operation (ASO)High transition frequency fTFull-pack package which can be installed t
2sb1367.pdf
isc Silicon PNP Power Transistor 2SB1367DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOCollector Power Dissipation-: P = 30W@ T = 25C CLow Collector Saturation Voltage-: V = -2.0V(Max)@ (I = -4A, I = -0.4A)CE(sat) C BComplement to Type 2SD2059Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATI
2sb1361.pdf
isc Silicon PNP Power Transistor 2SB1361DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SD2052Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
2sb1369.pdf
isc Silicon PNP Power Transistor 2SB1369DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -180V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -1.0V(Max)@ (I = -0.5A, I = -50mA)CE(sat) C BComplement to Type 2SD2061Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage applications.TV, monitor vertical
2sb1362.pdf
isc Silicon PNP Power Transistor 2SB1362DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SD2053Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
2sb1368.pdf
isc Silicon PNP Power Transistor 2SB1368DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOCollector Power Dissipation-: P = 25W@ T = 25C CLow Collector Saturation Voltage-: V = -1.7V(Max)@ (I = -3A, I = -0.3A)CE(sat) C BComplement to Type 2SD2060Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIO
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050