isc Silicon PNP Power Transistor 2SB1369DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -180V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -1.0V(Max)@ (I = -0.5A, I = -50mA)CE(sat) C BComplement to Type 2SD2061Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage applications.TV, monitor vertical

MCCTMMicro Commercial Components2SB1366F-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SB1366F-YPhone: (818) 701-4933Fax: (818) 701-4939Features Epoxy meets UL 94 V-0 flammability ratingPNP Silicon Moisure Sensitivity Level 1 Low VCE(SAT):VCE(SAT)=-1.0V(Max.)(IC/IB=-2A/-0.2A)Power Transistors Lead Free Finish/RoHS Compliant (No

MCCTMMicro Commercial Components2SB1366F-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SB1366F-YPhone: (818) 701-4933Fax: (818) 701-4939Features Epoxy meets UL 94 V-0 flammability ratingPNP Silicon Moisure Sensitivity Level 1 Low VCE(SAT):VCE(SAT)=-1.0V(Max.)(IC/IB=-2A/-0.2A)Power Transistors Lead Free Finish/RoHS Compliant (No

Power Transistors2SB1361Silicon PNP triple diffusion planar typeFor high power amplificationUnit: mmComplementary to 2SD205215.0 0.3 5.0 0.2Features11.0 0.2 3.2Satisfactory foward current transfer ratio hFE vs. collector cur-rent IC characteristics 3.2 0.1Wide area of safe operation (ASO)High transition frequency fTFull-pack package which can be installed t

isc Silicon PNP Power Transistor 2SB1367DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOCollector Power Dissipation-: P = 30W@ T = 25C CLow Collector Saturation Voltage-: V = -2.0V(Max)@ (I = -4A, I = -0.4A)CE(sat) C BComplement to Type 2SD2059Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATI

isc Silicon PNP Power Transistor 2SB1361DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SD2052Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

isc Silicon PNP Power Transistor 2SB1362DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SD2053Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

isc Silicon PNP Power Transistor 2SB1366DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOCollector Power Dissipation-: P = 25 W@ T = 25C CLow Collector Saturation Voltage-: V = -1.0V(Max)@ (I = -2A, I = -0.2A)CE(sat) C BComplement to Type 2SD2058Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATI

isc Silicon PNP Power Transistor 2SB1368DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOCollector Power Dissipation-: P = 25W@ T = 25C CLow Collector Saturation Voltage-: V = -1.7V(Max)@ (I = -3A, I = -0.3A)CE(sat) C BComplement to Type 2SD2060Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIO