2SB1389 - описание и поиск аналогов

2SB1389 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base ID 2. Collector 3. Emitter 1 4.5 k 500 2 3 (Typ) (Typ) 3 2SB1389 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7 V Collector cur

JMnic Product Specification Silicon PNP Power Transistors 2SB1389 DESCRIPTION With TO-220Fa package High DC current gain Low saturation voltage DARLINGTON APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(Ta=25 )

isc Silicon PNP Darlington Power Transistor 2SB1389 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@ (V = -3V, I = -2A) FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25

Transistors Low Frequency Transistor (*20V,*5A) 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436 FFeatures FExternal dimensions (Units mm) 1) Low VCE(sat). VCE(sat) = *0.35V (Typ.) (IC / IB = *4A / *0.1A) 2) Excellent DC current gain charac- teristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166. FStructure Epitaxial planar type PNP silicon transistor (96-141-B204) 211 Tra

2SB1386 / 2SB1412 / 2SB1326 Transistors Low frequency transistor (-20V, -5A) 2SB1386 / 2SB1412 / 2SB1326 External dimensions (Unit mm) Features 1) Low VCE(sat). 2SB1386 2SB1412 VCE(sat) = -0.35V (Typ.) 2.3+0.2 6.5 0.2 -0.1 4.5+0.2 C0.5 -0.1 5.1+0.2 1.5+0.2 -0.1 0.5 0.1 (IC/IB = -4A / -0.1A) 1.6 0.1 -0.1 2) Excellent DC current gain characteristics. 3) Compleme

UNISONIC TECHNOLOGIES CO., LTD 2SB1386 PNP SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) ORDERING INFORMATION Pin Assignment Order Number Package Packing 1 2 3 2SB1386G-x-AB3-R SOT-89 B C E Tape Reel Note Pin Assignment B Base C Collector E Emit

2SB1386 -5A, -30V PNP Silicon Low Frequency Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES Low VCE(sat) 4 Excellent DC current gain characteristics Complements the 2SD2098 1 2 3 A E C CLASSIFICATION OF hFE Product-Rank 2SB1386-P 2SB1386-Q 2SB1386-R B D Range 82 180 120 270 180 39

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1386 TRANSISTOR (PNP) SOT-89-3L FEATURES Low collector saturation voltage 1. BASE Execllent current-to-gain characteristics 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value Unit VCBO -30 V Collector-Base Voltage VCEO Col

JMnic Product Specification Silicon PNP Power Transistors 2SB1381 DESCRIPTION With TO-220F package Complement to type 2SD2079 Low collector saturation voltage High DC current gain APPLICATIONS High power switching applications Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol

E (2k ) (80 ) B Darlington 2SB1383 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2083) Application Chopper Regulator, DC Motor Driver and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Conditions Ratings Unit Unit Symbol 0.2 4.8 0.4 15.6 0

E (2k ) (80 ) B Darlington 2SB1382 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2082) Application Chopper Regulator, DC Motor Driver and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Symbol Conditions Ratings Unit Unit 0.2 0.2 5.5 15.6 0.

2SB1 38 6 TRANSISTOR(PNP) FEATURES Low collector saturation voltage, Execllent current-to-gain characteristics MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO -30 V Collector-Base Voltage VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -5 A PC Collector Power Dissipation 0.5 W TJ J

2SB1386 SOT-89 Transistor(PNP) 1. BASE SOT-89 1 2. COLLECTOR 4.6 B 4.4 2 1.6 1.8 1.4 1.4 3. EMITTER 3 2.6 4.25 2.4 3.75 Features 0.8 MIN Low collector saturation voltage, 0.53 0.40 0.48 0.44 2x) 0.13 B 0.35 Execllent current-to-gain characteristics 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters

2SB1386 PNP EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features SOT-89 * Excellent DC Current Gain Characteristics * Low VCE(Sat) Mechanical Data * Case Molded Plastic ABSOLUTE MAXIMUM RATINGS(TA=25 C) Rating Symbol Value Unit VCBO -30 V Collector to Base Voltage VCEO -20 V Collector to Emitter Voltage V VEBO -6 Collector to

FM120-M WILLAS 2SB1386THRU SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process d TRANSISTOR (PNP) eesign, excellent power dissipation offers better reverse l akage current and thermal resistance. SOD-123H SOT-89 Low p FEATURES mirofile surf

ST 2SB1386U PNP Silicon Epitaxial Planar Transistor Low frequency transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 30 V Collector Emitter Voltage -VCEO 20 V Emitter Base Voltage -VEBO 6 V Collector Current - DC -IC 5 A Collector Current - Pulse 1) -ICP 10 0.5 PC W Collector Power Dissipation 2 2) Junction Tempera

SMD Type Transistors Low Frequency Transistor 2SB1386 Features Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) Excellent DC current gain Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -6 V Collector current IC -5

SMD Type Transistors Low Frequency Transistor 2SB1386 Features Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) Excellent DC current gain Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -6 V Collector current IC -5

SMD Type Transistors PNP Transistors 2SB1386 Features 1.70 0.1 Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) Excellent DC current gain Epitaxial planar type 0.42 0.1 0.46 0.1 PNP silicon transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -20 V E

SMD Type Transistors Low Frequency Transistor 2SB1386 Features Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) Excellent DC current gain Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -6 V Collector current IC -5

CHENMKO ENTERPRISE CO.,LTD 2SB1386PGP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 Amperes APPLICATION * Power driver and Strobe Flash . FEATURE * Small flat package. (DPAK) DPAK * Low saturation voltage VCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A) * High saturation current capability. .094 (2.38) .086 (2.19) .022 (0.55) .018 (0.45) MARKING * hFE Classification P

CHENMKO ENTERPRISE CO.,LTD 2SB1386GP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 Amperes APPLICATION * Power driver and Strobe Flash . FEATURE * Small flat package. (SC-62/SOT-89) SC-62/SOT-89 * Low saturation voltage VCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A) * PC= 2.0W (mounted on ceramic substrate). * High saturation current capability. 4.6MAX. 1.6MAX. 1.7MAX.

isc Silicon PNP Darlington Power Transistor 2SB1383 DESCRIPTION High DC Current Gain h = 2000(Min.)@ I = -12A, V = -4V FE C CE High Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Complement to Type 2SD2083 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for driver of solenoid, motor and general purp

isc Silicon PNP Darlington Power Transistor 2SB1382 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO High DC Current Gain- h = 2000( Min.) @(I = -8A, V = -4V) FE C CE Low Collector Saturation Voltage- V = -1.5V(Max)@ (I = -8A, I = -16mA) CE(sat) C B Complement to Type 2SD2082 Minimum Lot-to-Lot variations for robust device performance and reli

isc Silicon PNP Darlington Power Transistor 2SB1381 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain- h = 1500(Min)@ (V = -3V, I = -2.5A) FE CE C Low Collector Saturation Voltage- V = -1.5V(Max)@ (I = -2.5A, I = -5mA) CE(sat) C B Complement to Type 2SD2079 Minimum Lot-to-Lot variations for robust device performance and rel