Справочник транзисторов. 2SB1409SD

 

Биполярный транзистор 2SB1409SD - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SB1409SD
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 18 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 180 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 160 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
   Макcимальный постоянный ток коллектора (Ic): 1.5 A
   Предельная температура PN-перехода (Tj): 175 °C
   Граничная частота коэффициента передачи тока (ft): 120 MHz
   Статический коэффициент передачи тока (hfe): 100
   Корпус транзистора: DPAK

 Аналоги (замена) для 2SB1409SD

 

 

2SB1409SD Datasheet (PDF)

 7.1. Size:46K  hitachi
2sb1409.pdf

2SB1409SD
2SB1409SD

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 8.1. Size:70K  sanyo
2sb1406.pdf

2SB1409SD
2SB1409SD

Ordering number:EN3470PNP Epitaxial Planar Silicon Darlington Transistor2SB1406Driver ApplicationsApplications Package Dimensions Relay drivers, hammer drivers, lamp drivers, motorunit:mmdrivers.2064[2SB1406]Features Darlington connection. High DC current gain. Large current capacity.E : EmitterC : CollectorB : BaseSANYO : NMPSpecificationsAbsol

 8.2. Size:73K  sanyo
2sb1405.pdf

2SB1409SD
2SB1409SD

Ordering number:EN3236PNP Epitaxial Planar Silicon Transistor2SB1405General Driver ApplicationsFeatures Package Dimensions Darlington connection.unit:mm High DC current gain.2064 Large current capacity, wide ASO.[2SB1405]E : EmitterC : CollectorB : BaseSANYO : NMPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Ratings Un

 8.3. Size:42K  hitachi
2sb1407.pdf

2SB1409SD
2SB1409SD

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 8.4. Size:29K  hitachi
2sb1401.pdf

2SB1409SD
2SB1409SD

2SB1401Silicon PNP Triple DiffusedADE-208-875 (Z)1st. EditionSep. 2000ApplicationLow frequency power amplifierOutlineTO-220FM211. Base2. Collector3. Emitter12 55 k3(Typ)32SB1401Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 300 VCollector to emitter voltage VCEO 300 VEmitter to base voltage VE

 8.5. Size:35K  hitachi
2sb1400.pdf

2SB1409SD
2SB1409SD

2SB1400Silicon PNP EpitaxialApplicationLow frequency power amplifierOutlineTO-220FM211. Base2. Collector3. Emitter12 1 k 400 3(Typ) (Typ)32SB1400Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 7 VCollector current IC

 8.6. Size:875K  kexin
2sb1407s.pdf

2SB1409SD
2SB1409SD

SMD Type TransistorsPNP Transistors2SB1407STO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1 Features+0.25.30-0.2 +0.80.50 -0.7 Low frequency power amplifier Complementary to 2SD21210.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collecto

 8.7. Size:214K  inchange semiconductor
2sb1404.pdf

2SB1409SD
2SB1409SD

isc Silicon PNP Darlington Power Transistor 2SB1404DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -1.5A)FE CE CMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25

 8.8. Size:214K  inchange semiconductor
2sb1402.pdf

2SB1409SD
2SB1409SD

isc Silicon PNP Darlington Power Transistor 2SB1402DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -1.5A)FE CE CMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25

 8.9. Size:211K  inchange semiconductor
2sb1400.pdf

2SB1409SD
2SB1409SD

isc Silicon PNP Darlington Power Transistor 2SB1400DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -120V(Min)CEO(SUS)High DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -3A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25

 8.10. Size:211K  inchange semiconductor
2sb1403.pdf

2SB1409SD
2SB1409SD

isc Silicon PNP Darlington Power Transistor 2SB1403DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -120V(Min)CEO(SUS)High DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -3A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25

Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
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