isc Silicon PNP Darlington Power Transistor 2SB1411DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current Gain-: h = 1500(Min)@ (V = -3V, I = -1A)FE CE CLow Collector Saturation Voltage-: V = -1.5V(Max)@ (I = -1A, I = -2mA)CE(sat) C BMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSH

2SB1386 / 2SB1412 / 2SB1326 Transistors Low frequency transistor (-20V, -5A) 2SB1386 / 2SB1412 / 2SB1326 External dimensions (Unit : mm) Features 1) Low VCE(sat). 2SB1386 2SB1412VCE(sat) = -0.35V (Typ.) 2.3+0.26.50.2-0.14.5+0.2C0.5-0.15.1+0.21.5+0.2 -0.1 0.50.1(IC/IB = -4A / -0.1A) 1.60.1 -0.12) Excellent DC current gain characteristics. 3) Compleme

Power Transistors2SB1414Silicon PNP epitaxial planar typeFor low-frequency driver/high power amplificationUnit: mm7.50.2 4.50.2Complementary to 2SD2134 Features Excellent current IC characteristics of forward current transfer ratio0.650.1 0.850.10.8 C 0.8 C1.00.1hFE vs. collector High transition frequency fT0.70.1 Allowing automatic insertio

Power Transistors2SB1418, 2SB1418ASilicon PNP epitaxial planar type DarlingtonUnit: mmFor power amplificationComplementary to 2SD2138 and 2SD2138A5.0 0.110.0 0.2 1.0Features High foward current transfer ratio hFE 90 High-speed switching Allowing automatic insertion with radial taping 1.2 0.1 C1.02.25 0.20.65 0.1Absolute Maximum Ratings (TC=25C)0.35

Power Transistors2SB1417, 2SB1417ASilicon PNP epitaxial planar typeFor power amplificationComplementary to 2SD2137 and 2SD2137AUnit: mmFeatures High forward current transfer ratio hFE which has satisfactory linearity5.0 0.1 Low collector to emitter saturation voltage VCE(sat)10.0 0.2 1.0 Allowing automatic insertion with radial taping90Absolute Maximum Ratings (T

Power Transistors2SB1416Silicon PNP epitaxial planar typeFor low-frequency power amplificationUnit: mm7.50.2 4.50.2Complementary to 2SD2136 Features High forward current transfer ratio hFE which has satisfactory0.650.1 0.850.10.8 C 0.8 C1.00.1linearity Low collector-emitter saturation voltage VCE(sat)0.70.1 Allowing automatic insertion with

UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) ORDERING INFORMATION Ordering Number Pin Assignment Package Packing

UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) ORDERING INFORMATION Ordering Number Pin Assignment Package Packing

2SB1412(PNP) TO-251/TO-252-2L TransistorTO-2511.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Power amplifier applications MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2LSymbol Parameter Value UnitsVCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -6 V IC Collector Current Continuous -5 A PC Collector Po

2SB1412PNP EPITAXIAL PLANAR TRANSISTORP b Lead(Pb)-Free1.BASE32.COLLECTOR23.EMITTER 1Features:* Excellent DC Current Gain CharacteristicsD-PAK(TO-252)* Low VCE(Sat)Mechanical Data:* Case : Molded Plastic* Weight : 0.925 gramsABSOLUTE MAXIMUM RATINGS(TA=25C)Rating Symbol Value UnitVCBO-30 VCollector to Base VoltageVCEO-20 VCollector to Emitter Voltag

SMD Type TransistorsPNP Transistors2SB1412TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1 Features+0.25.30-0.2 +0.80.50 -0.7 Excellent DC current gain characteristics Low VCE(SAT) VCE(SAT)= -0.35V (Typ)0.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbo

SMD Type TransistorsLow Frequency Transistor2SB1412TO-252Unit: mm+0.15 +0.16.50-0.15 2.30-0.1+0.2 +0.85.30-0.2 0.50-0.7FeaturesLow VCE(sat).PNP silicon transistor.0.127+0.1 max0.80-0.1+0.12.3 0.60-0.11 Base+0.154.60-0.152 Collector3 EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -30 VCollector-emit

SMD Type TransistorsLow Frequency Transistor2SB1412TO-252Unit: mm+0.15 +0.16.50-0.15 2.30-0.1+0.2 +0.85.30-0.2 0.50-0.7FeaturesLow VCE(sat).PNP silicon transistor.0.127+0.1 max0.80-0.1+0.12.3 0.60-0.11 Base+0.154.60-0.152 Collector3 EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -30 VCollector-emit

SMD Type TransistorsLow Frequency Transistor2SB1412TO-252Unit: mm+0.15 +0.16.50-0.15 2.30-0.1+0.2 +0.85.30-0.2 0.50-0.7FeaturesLow VCE(sat).PNP silicon transistor.0.127+0.1 max0.80-0.1+0.12.3 0.60-0.11 Base+0.154.60-0.152 Collector3 EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -30 VCollector-emit

2SB1412(3CA1412) PNP /SILICON PNP TRANSISTOR Purpose: Medium power amplifier applications. :, 2SD2118(3DG2118) Features: Low V ,excellent DC current gain characteristics, complements the 2SD2118(3DG2118). CE(sat)/Absolute maximum ratings(Ta=25)

isc Silicon PNP Power Transistor 2SB1412DESCRIPTIONLow collector-to-emitter saturation voltage: V = -1.0V(Max)@I = -4ACE(sat) CFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collec

isc Silicon PNP Power Transistor 2SB1419DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -160V(Min)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsOptimum for the output stage of a HiFi audio amplifierABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER