2SB15 - описание и поиск аналогов

Ordering number EN3715 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1509/2SD2282 High-Current Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters. unit mm 2039A Features [2SB1509/2SD2282] Low collector-to-emitter saturation voltage VCE(sat)= 0.5V max. Wide ASO and highly registant to breakdown. Micaless package

Ordering number EN4667 PNP Epitaxial Planar Silicon Transistors 2SB1527 Compact Motor Driver Applications Features Package Dimensions Low saturation voltage. unit mm Contains a diode between collector and emitter. 2018B Contains a bias resistor between base and emitter. [2SB1527] Large current capacity. Compact package making it easy to realize high- density, sm

DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR 2SB1571 PNP SILICON EPITAXIAL TRANSISTOR PACKAGE DRAWING (Unit mm) FEATURES Low VCE(sat) VCE(sat)1 -0.35 V Complementary to 2SD2402 4.5 0.1 1.6 0.2 1.5 0.1 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage VCBO -50 V Collector to Emitter Voltage VCEO -30 V C E B Emitter to Base Voltage VEBO -6.0 V 0.42 0

DATA SHEET SILICON TRANSISTOR 2SB1578 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SB1578 features high current capacity in small dimension PACKAGE DRAWING (UNIT mm) and is ideal for DC/DC converters and mortor drivers. FEATURES New package with dimensions in between those of small signal and power signal package High curren

2SB1590K Transistors Power Transistor (-15V, -1A) 2SB1590K Features External dimensions (Unit mm) 1) Low saturation voltage, VCE(sat) = -0.3V (Max.) SMT3 at IC / IB = -0.4A / -20mA. 2) IC = -1A 2.9 1.1 0.4 0.8 3) Complements the 2SD2444K. (3) (2) (1) Packaging specification and hFE 0.95 0.95 0.15 Type 2SB1590K 1.9 (1)Emitter SMT3 Package (2)Base Each lead has

2SB1580 / 2SB1316 / 2SB1567 Transistors Power Transistor (-100V , -2A) 2SB1580 / 2SB1316 / 2SB1567 Features External dimensions (Units mm) 1) Darlington connection for high DC current gain. 2SB1580 4.0 2) Built-in resistor between base and emitter. 1.0 2.5 0.5 3) Built-in damper diode. (1) 4) Complements the 2SD2195 / 2SD1980 / 2SD2398. (2) (3) (1) Base(Gate) (2) Collector(Dr

2SB1561 Datasheet Middle Power Transistor (-60V/-2A) lOutline l SOT-89 Parameter Value SC-62 VCEO -60V IC -2A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage, tipically VCE(sat)=-150mV at IC/IB=-1A/-50mA. 2)Collector-emitter voltage=-60V 3)PD=2W (Mounted on a ceramic board (40 40 0.7mm) ). 4)Complementary NPN Types

2SB1565 Transistors Power Transistor (-60V, -3A) 2SB1565 Features External dimensions (Units mm) 1) Low VCE(sat). (Typ.-0.3V at IC/IB = -2/-0.2A) 2) Excellent DC current gain characteristics. 10.0 4.5 3.2 2.8 3) Wide SOA (safe operating area). 1.2 1.3 0.8 0.75 ( ) 2.54 2.54 2.6 (1) Base Gate (1) (2) (3) ( ) (2) Collector Drain (1) (2) (3) (3) Emitter(Source) ROHM TO-

2SB1568 Transistors Transistors 2SD2399 (96-670-B422) (96-825-D422) 300

2SB1566 Transistors Transistors 2SD2395 (94L-459-B350) (94L-1101-D350) 296

2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A Transistors Transistors 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A (96-612-A58) (96-744-C58) 277

Transistor 2SB1537 Silicon PNP epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SD2357 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zin

Transistor 2SB1599 Silicon PNP epitaxial planer type For power amplification Unit mm Complementary to 2SD2457 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 45 zine packing. 0.4 0.08 0.4 0.04 0.5 0.08

Power Transistors 2SB1553 Silicon PNP epitaxial planar type For power amplification Unit mm 5.0 0.1 Features 10.0 0.2 1.0 High foward current transfer ratio hFE 90 Satisfactory linearity of foward current transfer ratio hFE Allowing automatic insertion with radial taping 1.2 0.1 C1.0 2.25 0.2 Absolute Maximum Ratings (TC=25 C) 0.65 0.1 0.35 0.1 1.05 0.1 Param

Transistor 2SB1539 Silicon PNP epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SD2359 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zin

Power Transistors 2SB1502 Silicon PNP epitaxial planar type Darlington For power amplification Unit mm 3.3 0.2 20.0 0.5 5.0 0.3 Complementary to 2SD2275 3.0 Features Optimum for 55W HiFi output High foward current transfer ratio hFE 5000 to 30000 1.5 Low collector to emitter saturation voltage VCE(sat)

Transistors 2SB1589 Silicon PNP epitaxial planar type Unit mm For low-frequency output amplification 4.5 0.1 1.6 0.2 1.5 0.1 Features Low collector-emitter saturation voltage VCE(sat) Large collector power dissipation PC 1 23 Mini Power type package, allowing downsizing of the equipment 0.4 0.08 0.5 0.08 0.4 0.04 and automatic insertion through the tape packi

Power Transistors 2SB1531 Silicon PNP epitaxial planar type Darlington For power amplification Unit mm Complementary to 2SD2340 15.0 0.5 4.5 0.2 13.0 0.5 10.5 0.5 2.0 0.1 Features Optimum for 40W HiFi output High foward current transfer ratio hFE 5000 to 30000 3.2 0.1 Low collector to emitter saturation voltage VCE(sat)

Power Transistors 2SB1593 Silicon PNP epitaxial planar type For low-frequency output amplification Unit mm 7.5 0.2 4.5 0.2 Features Low collector-emitter saturation voltage VCE(sat) Allowing automatic insertion with radial taping 0.65 0.1 0.85 0.1 0.8 C 0.8 C 1.0 0.1 0.7 0.1 Absolute Maximum Ratings Ta = 25 C 0.7 0.1 1.15 0.2 1.15 0.2 Parameter Symbol

Transistor 2SB1592 Silicon PNP epitaxial planer type For low-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V +0.15 +0.15 0.45 0.1 0.45 0.1 Collector to e

Transistor 2SB1537 Silicon PNP epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SD2357 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zin

Transistor 2SB1539 Silicon PNP epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SD2359 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zin

Transistor 2SB1589 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. 0.4

Transistor 2SB1599 Silicon PNP epitaxial planer type For power amplification Unit mm Complementary to 2SD2457 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 45 zine packing. 0.4 0.08 0.4 0.04 0.5 0.08

Power Transistors 2SB1548, 2SB1548A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2374 and 2SD2374A Unit mm Features High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) 4.6 0.2 Full-pack package which can be installed to the heat sink with 9.9 0.3 2.9 0.2 one screw Abs

Power Transistors 2SB1574 Silicon PNP epitaxial planar type For low-frequency output amplification Unit mm 6.5 0.1 2.3 0.1 5.3 0.1 4.35 0.1 Features 0.5 0.1 Possible to tsolder radiation fin directly to printed circuit boad Type with universal characteristics High collector-base voltage (Emitter open) VCBO High collector-emitter voltage (Base open) VCEO 1

Power Transistors 2SB1504 Silicon PNP epitaxial planar type darlington Unit mm 7.5 0.2 4.5 0.2 For power switching High forward current transfer ratio hFE High-speed switching 0.65 0.1 0.85 0.1 Allowing automatic insertion with radial taping 0.8 C 0.8 C 1.0 0.1 0.7 0.1 Absolute Maximum Ratings Ta = 25 C 0.7 0.1 1.15 0.2 1.15 0.2 Parameter Symbol Rating

Transistor 2SB1592 Silicon PNP epitaxial planer type For low-frequency amplification Unit mm Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 25 V Emitter to base voltage VEBO 11 V Pea

Power Transistors 2SB1503 Silicon PNP epitaxial planar type Darlington For power amplification Unit mm 3.3 0.2 20.0 0.5 5.0 0.3 Complementary to 2SD2276 3.0 Features Optimum for 110W HiFi output High foward current transfer ratio hFE 5000 to 30000 1.5 Low collector to emitter saturation voltage VCE(sat)

Power Transistors 2SB1554 Silicon PNP epitaxial planar type For power amplification Unit mm 5.0 0.1 Features 10.0 0.2 1.0 High forward current transfer ratio hFE which has satisfactory linearity 90 Allowing automatic insertion with radial taping 1.2 0.1 C1.0 Absolute Maximum Ratings (TC=25 C) 2.25 0.2 0.65 0.1 Parameter Symbol Ratings Unit 0.35 0.1 1.05 0.1 C

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1558 DESCRIPTION With TO-3PI package Complement to type 2SD2387 APPLICATIONS For power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PI) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER COND

JMnic Product Specification Silicon PNP Power Transistors 2SB1548 2SB1548A DESCRIPTION With TO-220F package Complement to type 2SD2374/2374A Low collector saturation voltage High forward current transfer ratio hFE which has satisfactory linearity APPLICATIONS For power amplifications PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-2

JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1559 DESCRIPTION With TO-3PN package Complement to type 2SD2389 APPLICATIONS Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER

JMnic Product Specification Silicon PNP Power Transistors 2SB1548 2SB1548A DESCRIPTION With TO-220F package Complement to type 2SD2374/2374A Low collector saturation voltage High forward current transfer ratio hFE which has satisfactory linearity APPLICATIONS For power amplifications PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-2

JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1560 DESCRIPTION With TO-3PN package Complement to type 2SD2390 APPLICATIONS Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER

JMnic Product Specification Silicon PNP Power Transistors 2SB1508 DESCRIPTION With TO-3PML package Low collector saturation voltage Complement to type 2SD2281 Wide area of safe operation APPLICATIONS For use in relay drivers ,high-speed Inverters,converters PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter

E (70 ) B Darlington 2SB1587 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2438) Application Audio, Series Regulator and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Ratings Unit Unit Symbol Conditions 0.2 0.2 5.5 15.6 VCBO 160 V ICBO VCB

E (70 ) B Darlington 2SB1559 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2389) Application Audio, Series Regulator and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Conditions Ratings Symbol Ratings Unit Unit 0.2 4.8 0.4 15.6 ICBO A VCBO 160

E (70 ) B Darlington 2SB1570 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2401) Application Audio, Series Regulator and General Purpose External Dimensions MT-200 Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Symbol Conditions Ratings Unit Unit 0.2 6.0 0.3 36.4 VCBO 160 ICBO VCB= 160V

E (70 ) B Darlington 2SB1588 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2439) Application Audio, Series Regulator and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 0.2 5.5 15.6 VCBO 160 V ICBO VCB=

E (70 ) B Darlington 2SB1560 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390) Application Audio, Series Regulator and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Ratings Symbol Unit Symbol Conditions Ratings Unit 0.2 4.8 0.4 15.6 VCBO 160 VCB= 160

ST 2SB1561U PNP Silicon Epitaxial Planar Transistor Medium Power Transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 60 V Emitter Base Voltage -VEBO 6 V Collector Current - DC -IC 2 A Collector Current - Pulse 1) -ICP 6 0.5 Total Power Dissipation Ptot W 2 2) Junction Temperature T

Product specification 2SB1561-Q SOT-89 Unit mm +0.1 +0.1 4.50-0.1 1.50-0.1 Features +0.1 1.80-0.1 Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-60V 2 3 Low saturation Voltage typically 1 +0.1 +0.1 +0.1 0.48-0.1 0.53-0.1 0.44-0.1 VCE (SAT)=-0.15Vat IC/IB=-1A/-50mA 1. Base 1. Source 1 Base +0.1 3.00-0.1 2 Collector 2. Collector 2. Drai

SMD Type Transistors PNP Transistors 2SB1590K SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=-1A 1 2 Collector Emitter Voltage VCEO=-15V +0.1 +0.05 0.95 -0.1 0.1 -0.01 Complementary to 2SD2444K +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collecto

SMD Type Transistors PNP Transistors 2SB1599 1.70 0.1 Features Low collector to emitter saturation voltage VCE(sat). Complementary to 2SD2457 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5

SMD Type Transistors PNP Transistors 2SB1561 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-60V Complements the 2SD2391 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -

SMD Type Transistors PNP Transistors 2SB1539 1.70 0.1 Features Low collector to emitter saturation voltage Large collector power dissipation PC. Complementary to 2SD2359 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO -20 V

SMD Type Transistors PNP Transistors 2SB1589 1.70 0.1 Features Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. For low-frequency output amplification 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -10 Collector - Emit

SMD Type Transistors PNP Transistors 2SB1527 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Large current capatance 1 2 Low collector-emitter saturation voltage +0.1 0.95-0.1 0.1+0.05 -0.01 Contains a bias resisror between base and emitter +0.1 1.9-0.1 Collector 1.Base Base 2.Emitter RBE 3.collector Emitter Absolute Maximum Ratings Ta = 2

SMD Type Transistors PNP Transistors 2SB1571 1.70 0.1 Features Low collector-emitter saturation voltage Complementary to 2SD2402 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -30 V Emitter - Base Voltage VEBO -6 Collector Cur

SMD Type Transistors PNP Transistors 2SB1527 SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 3 Features Large current capatance Low collector-emitter saturation voltage 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 Contains a bias resisror between base and emitter Collector +0.1 1.9-0.2 Base 1. Base 2. Emitter RBE 3. Collector Emitter Absolute Maximum Rati

SMD Type Transistors PNP Transistors 2SB1572 1.70 0.1 Features Low collector-emitter saturation voltage Complementary to 2SD2403 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage VCEO -60 V Emitter - Base Voltage VEBO -6 Collector Cur

SMD Type Transistors PNP Transistors 2SB1537 1.70 0.1 Features Low collector to emitter saturation voltage Large collector power dissipation PC. Complementary to 2SD2357 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -10 Collector - Emitter Voltage VCEO -10 V

SMD Type Transistors PNP Transistors 2SB1574 TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Collector breakdown voltage VCBO/VCEO = 50V Collector current IC = 2A For low-frequency output amplification 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Ma

SMD Type Transistors PNP Transistors 2SB1580 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-100V Complements the 2SD2195 C 0.42 0.1 0.46 0.1 1.Base B 2.Collector 3.Emitter R1 R2 E R1 3.5k R2 300 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO

SMD Type Transistors PNP Transistors 2SB1578 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-5A Collector Emitter Voltage VCEO=-60V Complementary to 2SD2425 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO

isc Silicon PNP Power Transistor 2SB1569 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Complement to Type 2SD2400 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -120

isc Silicon PNP Power Transistor 2SB1530 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min.) (BR)CEO Complement to Type 2SD2337 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier color TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

isc Silicon PNP Darlington Power Transistor 2SB1558 DESCRIPTION High DC Current Gain- h = 5000(Min)@I = -7A FE C Low-Collector Saturation Voltage- V = -2.5V(Max.)@I = -7A CE(sat) C Complement to Type 2SD2387 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATING

isc Silicon PNP Power Transistor 2SB1562 DESCRIPTION High DC Current Gain- h = 300 1000@ (V = -5V , I = -0.5A) FE CE C Low Saturation Voltage- V = -0.5V(TYP)@ (I = -2A, I = -20mA) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

isc Silicon PNP Darlington Power Transistor 2SB1502 DESCRIPTION High DC Current Gain- h = 5000(Min)@I = -4A FE C Low-Collector Saturation Voltage- V = -2.5V(Max.)@I = -4A CE(sat) C Complement to Type 2SD2275 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications Optimum for 55W HiFi o

isc Silicon PNP Power Transistor 2SB1565 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Collector Power Dissipation- P = 25 W@ T = 25 C C Low Collector Saturation Voltage Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifications. ABSOLUTE M

isc Silicon PNP Darlington Power Transistor 2SB1531 DESCRIPTION High DC Current Gain- h = 5000(Min)@I = -5A FE C Low-Collector Saturation Voltage- V = -2.5V(Max.)@I = -5A CE(sat) C Complement to Type 2SD2340 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS

isc Silicon PNP Power Transistor 2SB1507 DESCRIPTION Low Collector Saturation Voltage V = -0.4(V)(Max)@I = -4A CE(sat) C Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SD2280 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers,high-speed inverters,converters. ABSOLUTE MAXIMUM

isc Silicon PNP Darlington Power Transistor 2SB1568 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@ (V = -3V, I = -2A) FE CE C Complement to Type 2SD2399 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM

isc Silicon PNP Power Transistor 2SB1548A DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Collector Power Dissipation- P = 25 W@ T = 25 C C Low Collector Saturation Voltage Complement to Type 2SD2374A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifications. ABSOLUTE

isc Silicon PNP Darlington Power Transistor 2SB1587 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = -6A, V =- 4V) FE C CE Low Collector Saturation Voltage- V = -2.5V(Max)@ (I = -6A, I = -6mA) CE(sat) C B Complement to Type 2SD2438 Minimum Lot-to-Lot variations for robust device performance and relia

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB1559 DESCRIPTION High DC Current Gain- h = 5000(Min)@I = -6A FE C Low-Collector Saturation Voltage- V = -2.5V(Max.)@I = -6A CE(sat) C Complement to Type 2SD2389 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio, series regulator and ge

isc Silicon PNP Darlington Power Transistor 2SB1570 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO Low-Collector Saturation Voltage- V = -2.5V(Max.)@I = -7A CE(sat) C Complement to Type 2SD2401 Minimum Lot-to-Lot variations for robust device performance and reliable operatio APPLICATIONS Designed for audio,series regulator and general purp

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1548 2SB1548A DESCRIPTION With TO-220F package Complement to type 2SD2374/2374A Low collector saturation voltage High forward current transfer ratio hFE which has satisfactory linearity APPLICATIONS For power amplifications PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplif

isc Silicon PNP Power Transistor 2SB1548 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Collector Power Dissipation- P = 25 W@ T = 25 C C Low Collector Saturation Voltage Complement to Type 2SD2374 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifications. ABSOLUTE MA

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1509 DESCRIPTION Low Collector Saturation Voltage VCE(sat)= -0.5(V)(Max)@IC= -8A Good Linearity of hFE Wide Area of Safe Operation Complement to Type 2SD2282 APPLICATIONS Designed for relay drivers,high-speed inverters,converters. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARA

isc Silicon PNP Darlington Power Transistor 2SB1588 DESCRIPTION High DC Current Gain- h = 5000(Min)@I = -7A FE C Low-Collector Saturation Voltage- V = -2.5V(Max.)@I = -7A CE(sat) C Complement to Type 2SD2439 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio, series regulator and general purpose applicati

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1550 DESCRIPTION With TO-220C package High DC current gain DARLINGTON APPLICATIONS For medium speed and power switching applications PINNING PIN DESCRIPTION 1 Base Collector; connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE

isc Silicon PNP Darlington Power Transistor 2SB1560 DESCRIPTION High DC Current Gain- h = 5000(Min)@I = -7A FE C Low-Collector Saturation Voltage- V = -2.5V(Max.)@I = -7A CE(sat) C Complement to Type 2SD2390 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio, series regulator and general purpose applicati

isc Silicon PNP Power Transistor 2SB1566 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V(Min) (BR)CEO Low Collector Saturation Voltage- V = -1.0V(Max)@ (I = -2A, I = -0.2A) CE(sat) C B Wide Area of Safe Operation Complement to Type 2SD2395 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amp

isc Silicon PNP Darlington Power Transistor 2SB1503 DESCRIPTION High DC Current Gain- h = 5000(Min)@I = -7A FE C Low-Collector Saturation Voltage- V = -2.5V(Max.)@I = -7A CE(sat) C Complement to Type 2SD2276 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications Optimum for 110W HiFi

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1551 DESCRIPTION With TO-220Fa package High DC current gain DARLINGTON APPLICATIONS For medium speed and power switching applications PINNING PIN DESCRIPTION 1 Base Collector; connected to 2 mounting base Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum

isc Silicon PNP Darlington Power Transistor 2SB1567 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain Built-in resistor between base and emitter Complement to Type 2SD2398 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power switching applications. ABSOLUTE MAX

isc Silicon PNP Power Transistor 2SB1508 DESCRIPTION Low Collector Saturation Voltage V = -0.5(V)(Max)@I = -6A CE(sat) C Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SD2281 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers,high-speed inverters,converters. ABSOLUTE MAXIMUM