Биполярный транзистор 2SB1570 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SB1570
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 150 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 150 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 12 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 55 MHz
Статический коэффициент передачи тока (hfe): 10000
Корпус транзистора: MT-200
2SB1570 Datasheet (PDF)
2sb1570.pdf
E(70)BDarlington 2SB1570Equivalent circuitCSilicon PNP Epitaxial Planar Transistor (Complement to type 2SD2401)Application : Audio, Series Regulator and General PurposeExternal Dimensions MT-200 Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Symbol Conditions Ratings UnitUnit0.26.00.336.4VCBO 160 ICBO VCB=160V
2sb1570.pdf
isc Silicon PNP Darlington Power Transistor 2SB1570DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -150V(Min)(BR)CEOLow-Collector Saturation Voltage-: V = -2.5V(Max.)@I = -7ACE(sat) CComplement to Type 2SD2401Minimum Lot-to-Lot variations for robust deviceperformance and reliable operatioAPPLICATIONSDesigned for audio,series regulator and general purp
2sb1571.pdf
DATA SHEETPNP SILICON EPITAXIAL TRANSISTOR2SB1571PNP SILICON EPITAXIAL TRANSISTORPACKAGE DRAWING (Unit: mm)FEATURES Low VCE(sat): VCE(sat)1 -0.35 V Complementary to 2SD24024.50.11.60.21.50.1ABSOLUTE MAXIMUM RATINGS (TA = 25C)Collector to Base Voltage VCBO -50 VCollector to Emitter Voltage VCEO -30 VCE BEmitter to Base Voltage VEBO -6.0 V0.42 0
2sb1578.pdf
DATA SHEETSILICON TRANSISTOR2SB1578PNP SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHINGThe 2SB1578 features high current capacity in small dimension PACKAGE DRAWING (UNIT: mm)and is ideal for DC/DC converters and mortor drivers.FEATURES New package with dimensions in between those of small signaland power signal package High curren
2sb1574.pdf
Power Transistors2SB1574Silicon PNP epitaxial planar typeFor low-frequency output amplificationUnit: mm6.50.12.30.15.30.14.350.1 Features 0.50.1 Possible to tsolder radiation fin directly to printed circuit boad Type with universal characteristics High collector-base voltage (Emitter open) VCBO High collector-emitter voltage (Base open) VCEO1
2sb1571.pdf
SMD Type TransistorsPNP Transistors2SB15711.70 0.1 Features Low collector-emitter saturation voltage Complementary to 2SD24020.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -30 V Emitter - Base Voltage VEBO -6 Collector Cur
2sb1572.pdf
SMD Type TransistorsPNP Transistors2SB15721.70 0.1 Features Low collector-emitter saturation voltage Complementary to 2SD24030.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage VCEO -60 V Emitter - Base Voltage VEBO -6 Collector Cur
2sb1574.pdf
SMD Type TransistorsPNP Transistors2SB1574TO-252Unit: mm+0.156.50-0.15+0.1 Features 2.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Collector breakdown voltage: VCBO/VCEO = 50V Collector current: IC = 2A For low-frequency output amplification0.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Ma
2sb1578.pdf
SMD Type TransistorsPNP Transistors2SB1578SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-5A Collector Emitter Voltage VCEO=-60V Complementary to 2SD24250.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO
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