Справочник транзисторов. 2SB160

 

Биполярный транзистор 2SB160 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SB160
   Тип материала: Ge
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.06 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 7 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
   Макcимальный постоянный ток коллектора (Ic): 0.005 A
   Предельная температура PN-перехода (Tj): 65 °C
   Граничная частота коэффициента передачи тока (ft): 0.3 MHz
   Статический коэффициент передачи тока (hfe): 75
   Корпус транзистора: R19

 Аналоги (замена) для 2SB160

 

 

2SB160 Datasheet (PDF)

 0.1. Size:206K  toshiba
2sb1602.pdf

2SB160
2SB160

 0.2. Size:45K  panasonic
2sb1605.pdf

2SB160
2SB160

Power Transistors2SB1605, 2SB1605ASilicon PNP epitaxial planar typeFor low-freauency power amplificationUnit: mmFeatures High forward current transfer ratio hFE which has satisfactory linearity4.6 0.2 Low collector to emitter saturation voltage VCE(sat)9.9 0.3 2.9 0.2 Full-pack package with outstanding insulation, which can be in- 3.2 0.1stalled to the heat sin

 0.3. Size:56K  panasonic
2sb1604.pdf

2SB160
2SB160

Power Transistors2SB1604, 2SB1604ASilicon PNP epitaxial planar typeFor low-voltage switchingUnit: mmFeatures4.6 0.2Low collector to emitter saturation voltage VCE(sat)9.9 0.3 2.9 0.2 3.2 0.1High-speed switchingFull-pack package with outstanding insulation, which can be in-stalled to the heat sink with one screwAbsolute Maximum Ratings (TC=25C)2.6 0.11

 0.4. Size:55K  panasonic
2sb1607.pdf

2SB160
2SB160

Power Transistors2SB1607Silicon PNP epitaxial planar typeFor power switchingUnit: mmComplementary to 2SD24694.6 0.29.9 0.3 2.9 0.2Features 3.2 0.1Low collector to emitter saturation voltage VCE(sat)Satisfactory linearity of foward current transfer ratio hFELarge collector current ICFull-pack package with outstanding insulation, which can be in-2.6 0.1s

 0.5. Size:55K  panasonic
2sb1606.pdf

2SB160
2SB160

Power Transistors2SB1606Silicon PNP epitaxial planar typeFor power switchingUnit: mm4.6 0.29.9 0.3 2.9 0.2Features 3.2 0.1Low collector to emitter saturation voltage VCE(sat)Satisfactory linearity of foward current transfer ratio hFELarge collector current ICFull-pack package with outstanding insulation, which can be in-2.6 0.1stalled to the heat sink wi

 0.6. Size:54K  panasonic
2sb1603.pdf

2SB160
2SB160

Power Transistors2SB1603, 2SB1603ASilicon PNP epitaxial planar typeFor low-voltage switchingUnit: mm4.6 0.2Features9.9 0.3 2.9 0.2Low collector to emitter saturation voltage VCE(sat) 3.2 0.1High-speed switchingFull-pack package with outstanding insulation, which can be in-stalled to the heat sink with one screwAbsolute Maximum Ratings (TC=25C) 2.6 0.11.

 0.7. Size:188K  jmnic
2sb1604 2sb1604a.pdf

2SB160
2SB160

JMnic Product Specification Silicon PNP Power Transistors 2SB1604 2SB1604A DESCRIPTION With TO-220F package Low collector saturation voltage High speed switching APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbolAbsolute maximum ratings (Ta=25) SYMBOL PARAMET

 0.8. Size:215K  inchange semiconductor
2sb1605.pdf

2SB160
2SB160

isc Silicon PNP Power Transistor 2SB1605DESCRIPTIONHigh-speed SwitchingLow Collector to Emitter Saturation Voltage: V = -1.2V(Max.)@I = -3ACE(sat) CFull-pack Package With Outstanding Insulation,Which Can Be Installed to The Heat Sink With One ScrewMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-freauen

 0.9. Size:213K  inchange semiconductor
2sb1604.pdf

2SB160
2SB160

isc Silicon PNP Power Transistor 2SB1604DESCRIPTIONHigh-speed SwitchingLow Collector to Emitter Saturation Voltage: V = -0.6V(Max.)@I = -10ACE(sat) CFull-pack Package With Outstanding Insulation,Which Can Be Installed to The Heat Sink With One ScrewMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-voltag

 0.10. Size:148K  inchange semiconductor
2sb1605 2sb1605a.pdf

2SB160
2SB160

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1605 2SB1605A DESCRIPTION With TO-220F package Low collector saturation voltage Good linearity of hFE APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbolAbsolute maximum ratings (Ta=25

 0.11. Size:149K  inchange semiconductor
2sb1603 2sb1603a.pdf

2SB160
2SB160

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1603 2SB1603A DESCRIPTION With TO-220F package Low collector saturation voltage High speed switching APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbolAbsolute maximum ratings (Ta=25)

 0.12. Size:214K  inchange semiconductor
2sb1607.pdf

2SB160
2SB160

isc Silicon PNP Power Transistor 2SB1607DESCRIPTIONLarge Collector CurrentSatisfactory Linearity of Foward Current Transfer RatioLow Collector to Emitter Saturation Voltage: V = -0.5V(Max.)@I = -5ACE(sat) CFull-pack Package With Outstanding Insulation,Which Can Be Installed to The Heat Sink With One ScrewComplement to Type 2SD2469Minimum Lot-to-Lot variations for

 0.13. Size:215K  inchange semiconductor
2sb1606.pdf

2SB160
2SB160

isc Silicon PNP Power Transistor 2SB1606DESCRIPTIONHigh Collector current IcLow Collector to Emitter Saturation Voltage: V = -0.5V(Max.)@I = -4ACE(sat) CFull-pack Package With Outstanding Insulation,Which Can Be Installed to The Heat Sink With One ScrewMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power

 0.14. Size:215K  inchange semiconductor
2sb1603.pdf

2SB160
2SB160

isc Silicon PNP Power Transistor 2SB1603DESCRIPTIONHigh-speed SwitchingLow Collector to Emitter Saturation Voltage: V = -0.5V(Max.)@I = -2ACE(sat) CFull-pack Package With Outstanding Insulation,Which Can Be Installed to The Heat Sink With One ScrewMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-voltage

 0.15. Size:149K  inchange semiconductor
2sb1604 2sb1604a.pdf

2SB160
2SB160

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1604 2SB1604A DESCRIPTION With TO-220F package Low collector saturation voltage High speed switching APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbolAbsolute maximum ratings (Ta=25)

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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