JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1626 DESCRIPTION With TO-220F package Complement to type 2SD2495 APPLICATIONS For audio,series regulator and general purpose applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CON

E(70)BDarlington 2SB1626Equivalent circuit CSilicon PNP Epitaxial Planar Transistor (Complement to type 2SD2495)Application : Audio, Series Regulator and General PurposeExternal Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SB1626 Symbol Conditions 2SB1626 UnitUnit0.24.20.210.1VCBO 110 ICBO VCB=

INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistor 2SB1626DESCRIPTIONHigh DC Current GainLow-Collector Saturation VoltageComplement to Type 2SD2495Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio,series regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM

DATA SHEETSILICON TRANSISTOR2SB1628PNP SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHINGThe 2SB1628 features high current capacity in small dimension PACKAGE DRAWING (UNIT: mm)and is ideal for DC/DC converters and mortor drivers.FEATURES High current capacitance Low collector saturation voltageQUALITY GRADES StandardPlease re

Power Transistors2SB1623Silicon PNP epitaxial planar typeFor power amplificationUnit: mm4.60.29.90.32.90.2 Features 3.20.1 High forward current transfer ratio hFE Satisfactory linearity of forward current transfer ratio hFE Dielectric breakdown voltage of the package: > 5 kV1.40.22.60.11.60.2 Absolute Maximum Ratings Ta = 25C0.8

Power Transistors2SB1623ASilicon PNP epitaxial planar typeFor power amplificationUnit: mm4.60.29.90.32.90.2 Features 3.20.1 High forward current transfer ratio hFE Satisfactory linearity of forward current transfer ratio hFE Dielectric breakdown voltage of the package: > 5 kV Absolute Maximum Ratings Ta = 25C1.40.22.60.11.60.2Pa

Power Transistors2SB1629Silicon PNP epitaxial planar typeFor power amplificationUnit: mm4.6 0.29.9 0.3 2.9 0.2Features 3.2 0.1High foward current transfer ratio hFESatisfactory linearity of foward current transfer ratio hFEFull-pack package with outstanding insulation, which can be in-stalled to the heat sink with one screw2.6 0.11.2 0.151.45 0.15

JMnic Product SpecificationSilicon PNP Darlington Power Transistors 2SB1625 DESCRIPTION With TO-3PML package Complement to type 2SD2494 APPLICATIONS Audio ,regulator and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterMaximum absolute ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO

E(70)BDarlington 2SB1625Equivalent circuitCSilicon PNP Epitaxial Planar Transistor (Complement to type 2SD2494)Application : Audio, Series Regulator and General PurposeExternal Dimensions FM100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SB1625 Symbol Conditions 2SB1625 UnitUnit0.20.2 5.515.6VCBO 110 ICBO VCB=

E(70)BDarlington 2SB1624Equivalent circuitCSilicon PNP Epitaxial Planar Transistor (Complement to type 2SD2493)Application : Audio, Series Regulator and General Purpose(Ta=25C) External Dimensions MT-100(TO3P) Absolute maximum ratings Electrical Characteristics (Ta=25C)Symbol 2SB1624 Symbol Conditions 2SB1624Unit Unit0.24.80.415.6VCBO 110 ICBO VCB=

SMD Type TransistorsPNP Transistors2SB16281.70 0.1 Features High current capacitance Low collector saturation voltage0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO -16 V Emitter - Base Voltage VEBO -6 Collector Current - C

isc Silicon PNP Darlington Power Transistor 2SB1625DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -110V(Min)(BR)CEOLow-Collector Saturation Voltage-: V = -2.5V(Max.)@I = -5ACE(sat) CComplement to Type 2SD2494Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio,series regulator and general pur

INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistor 2SB1624DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -110V(Min)(BR)CEOLow-Collector Saturation Voltage-: V = -2.5V(Max.)@I = -5ACE(sat) CComplement to Type 2SD2493Minimum Lot-to-Lot variations for robust deviceperformance and reliable operatioAPPLICATIONSDesigned for audio,series re