Silicon Power Transistors2SB1721PNP 2SB1721 IC OAFA

2SB1733 Transistors General purpose amplification (-30V, -1A) 2SB1733 Dimensions (Unit : mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) : max. -350mV at Ic = -500mA / IB = -25mA ROHM :TUMT3 Abbreviated symbol : EW (1) Base(2) Emitter(3) Collector Packaging specification

2SB1714 Transistors -2A / -30V Bipolar transistor 2SB1714 Applications Dimensions (Unit : mm) Low frequency amplification, driver MPT3 Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE( sat) -370mV, at IC = -1.5A, IB = -75mA) (1)Base(2)Collector Structure (3)Emitter Abbreviated symbol : XYPNP epitaxial planar silicon tra

2SB1707 Transistors Low frequency amplifier 2SB1707 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3Driver 1.0MAX2.90.85 0.70.4( )3 Features 1) A collector current is large. (4A) ( ) ( )2) VCE(sat) -250mV 1 20.95 0.950.16At IC = -2A / IB = -40mA 1.9(1) Base(2) EmitterEach lead has same dimensions(3) Collector

2SB1709 Transistors Genera purpose amplification(-12V, -1.5A) 2SB1709 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3Driver 1.0MAX2.90.850.4 0.7(3) Features 1) A collector current is large. 2) Collector saturation voltage is low. (1) (2)0.95 0.95VCE(sat) -200mV 0.161.9(1) Baseat IC = -500mA / IB = -25mA (2) Emitter Ea

2SB1731 Transistors Low frequency amplifier 2SB1731 Dimensions (Unit : mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) VCE(sat) -370mV at IC =-1A / IB =-50mA ROHM : TUMT3 Abbreviated symbol : FL (1)Base(2)Emitter(3)Collector Packaging specifications Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Un

2SB1713 Transistors -3A / -12V Bipolar transistor 2SB1713 Applications Dimensions (Unit : mm) Low frequency amplification, driver MPT3 Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (Typ. = -250mV, at IC = -1.5A, IB = -30mA) (1)Base(2)Collector Structure (3)Emitter Abbreviated symbol : XWPNP epitaxial planar silicon transistor

2SB1705 Transistors Low frequency amplifier 2SB1705 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3Driver 1.0MAX2.90.85 0.70.4(3) Features 1) A collector current is large. ( ) ( )1 22) VCE(sat) -250mV 0.95 0.950.16At IC=-1.5A / IB=-30mA 1.9(1) Base(2) EmitterEach lead has same dimensions(3) Collector Equival

2SB1706 Transistors Low frequency amplifier 2SB1706 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3Driver 1.0MAX2.90.850.4 0.7(3) Features 1) A collector current is large. ( ) ( )1 22) VCE(sat) -370mV 0.95 0.950.16 At lc= -1.5A / lB= -75mA 1.9(1) Base(2) EmitterEach lead has same dimensions(3) Collector Absolu

2SB1708DatasheetGeneral purpose amplification(-30V,-3A)lOutlinel SOT-346T Parameter Value SC-96 VCEO-30VIC-3ATSMT3lFeatures lInner circuitl l1) Collector current is large.(3A)2) VCE(sat) -250mVat IC= -1.5A / IB= -30mA.lApplicationlLOW FREQUENCY AMPLIFIERlPackaging specificationslPackage Taping Reel si

2SB1730 Transistors General purpose amplification(-12V, -2A) 2SB1730 Applications Dimensions (Unit : mm) Low frequency amplifier Deiver Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) -180mV at IC= -1A / IB= -50mA ROHM : TUMT3 Abbreviated symbol : FV (1) Base Packaging specifications (2) Emitter(3) CollectorPackag

2SB1732 Transistors Genera purpose amplification(-12V, -1.5A) 2SB1732 Dimensions (Unit : mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) -200mV ROHM : TUMT3 Abbreviated symbol : EV (1)Baseat IC = -500mA / IB = -25mA (2)Emitter (3)Collector Packaging specifications

2SB1710 Transistors General purpose amplification (-30V, -1A) 2SB1710 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3Driver 1.0MAX2.90.85 0.70.4( )3 Features 1) A collector current is large. 2) Collector saturation voltage is low. ( ) ( )1 20.95 0.95VCE(sat) -350mV 0.161.9(1) Base at Ic = -500mA / IB = -25mA (2) E

Transistors2SB1734Silicon PNP epitaxial planar typeFor general amplificationUnit: mmComplementary to 2SD27060.40+0.100.050.16+0.100.063 Features High forward current transfer ratio hFE Mini type package, allowing downsizing of the equipment and1 2automatic insertion through the tape packing.(0.95) (0.95)1.90.1 Absolute Maximum Ratings Ta =

Transistors2SB1722JSilicon PNP epitaxial planar typeUnit: mm1.60+0.050.030.12+0.030.01For high breakdown voltage low-frequency amplification1.000.0531 2 Features0.270.02 High collector-emitter voltage (Base open) VCEO(0.50)(0.50) SS-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing5