BT169EW SCR DATASHEET

BT169EW ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 500 V
   Maximum average on-state current (I_T(AVR)): 0.63 A
   Maximum RMS on-state current (I_T(RMS)): 1 A
   Non repetitive surge peak on-state current (I_TSM): 8 A
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..110 °C
   Triggering gate voltage (V_GT): 0.8 V
   Peak on-state voltage drop (V_TM): 1.5 V
   Triggering gate current (I_GT): 0.12 mA
   Holding current (I_H): 5 mA

Package: SOT‑223

 

BT169EW Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

BT169EW Datasheet

Page #1

Page #2

Description

isc Thyristors BT169EW DESCRIPTION ·With SOT-223 packaging ·High surge capability ·Glass passivated junctions and center gate fire for greater parameter uniformity and stability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER MIN UNIT V Repetitive peak off-state voltage 500 V DRM V Repetitive peak off-state voltage 500 V RRM I Average on-state cu