All Transistors. SCR. BT169EW Datasheet

 

BT169EW SCR DATASHEET

BT169EW ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 500 V
   Maximum average on-state current (IT(AVR)): 0.63 A
   Maximum RMS on-state current (IT(RMS)): 1 A
   Non repetitive surge peak on-state current (ITSM): 8 A
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..110 °C
   Triggering gate voltage (VGT): 0.8 V
   Peak on-state voltage drop (VTM): 1.5 V
   Triggering gate current (IGT): 0.12 mA
   Holding current (IH): 5 mA

Package: SOT‑223

 

BT169EW Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

BT169EW Datasheet

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BT169EW
 datasheet

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BT169EW
 datasheet #2

Description

isc Thyristors BT169EW DESCRIPTION ·With SOT-223 packaging ·High surge capability ·Glass passivated junctions and center gate fire for greater parameter uniformity and stability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER MIN UNIT V Repetitive peak off-state voltage 500 V DRM V Repetitive peak off-state voltage 500 V RRM I Average on-state cu

 
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