CPQ150 Triac DATASHEET

CPQ150 ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (P_GM): 3 W
   Maximum repetitive peak and off-state voltage (V_DRM): 200 V
   Maximum RMS on-state current (I_T(RMS)): 4 A
   Non repetitive surge peak on-state current (I_TSM): 40 A
   Critical rate of rise of off-state voltage (dV/dt): 100 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 60 K/W
   Junction to case thermal resistance (R_TH(j-c)): 7.5 K/W
   Triggering gate voltage (V_GT): 2 V
   Peak on-state voltage drop (V_TM): 2.1 V
   Triggering gate current (I_GT): 25 mA
   Holding current (I_H): 25 mA

Package: TO‑202

 

CPQ150 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

CPQ150 Datasheet

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Description

TM CPQ150 Central Triac Semiconductor Corp. 16 Amp, 600 Volt Triac Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 150 MILS x 150 MILS Die Thickness 8.6 MILS ± 0.6 MILS MT1 Bonding Pad Area 68.9 MILS x 118 MILS Gate Bonding Pad Area 39.4 MILS x 39.4 MILS Top Side Metalization Al - 45,000Å Back Side Metalization Al/Mo/Ni/Ag - 32,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 466 PRINCIPAL DEVICE TYPES CQ220-16B Series BACKSIDE MT2 145 Adams Avenue Hauppauge, NY