HSB100-8 Triac DATASHEET

HSB100-8 ELECTRICAL SPECIFICATIONS

   Type: Triac
   Maximum peak gate power (P_GM): 1 W
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum RMS on-state current (I_T(RMS)): 8 A
   Non repetitive surge peak on-state current (I_TSM): 80 A
   Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 200 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 1.6 K/W
   Triggering gate voltage (V_GT): 1.5 V
   Peak on-state voltage drop (V_TM): 1.55 V
   Triggering gate current (I_GT): 25 mA
   Holding current (I_H): 25 mA

Package: TO‑220AB

HSB100-8 Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

HSB100-8 Datasheet

Page #1

Page #2

Description

VDRM = 600 V HSB100-8 IT(RMS) = 0.8A Silicon Controlled Rectifier 3.Anode Symbol FEATURES 2.Gate  Repetitive Peak Off-State Voltage: 600V 1.Cathode  R.M.S On-state Current (IT(RMS)=0.8A)  Average On-state Current (IT(AV)=0.5A)  Low On-State Voltage (1.2VTyp@ITM) 1. K 2. G 3. A 3 2 General Description 1 HSB100-8 PNPN Devices designed for high volume, line-powered consumer applications such as relay and lamp driver, small motor controls, g

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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. HSB100-8 Datasheet