IXHX40N150V1HV SCR DATASHEET

IXHX40N150V1HV ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (P_GM): 5 W
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum RMS on-state current (I_T(RMS)): 40 A
   Non repetitive surge peak on-state current (I_TSM): 460 A
   Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.8 K/W
   Triggering gate voltage (V_GT): 1.5 V
   Peak on-state voltage drop (V_TM): 1.6 V
   Triggering gate current (I_GT): 35 mA
   Holding current (I_H): 75 mA

Package: TO220B

 

IXHX40N150V1HV Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

IXHX40N150V1HV Datasheet

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Description

Preliminary Technical Information VDM = 1500V 1500V MOS Gated IXHX40N150V1HV Thyristor A w/ Anti-Parallel Diode G K TO-247PLUS-HV Symbol Test Conditions Maximum Ratings VDM TJ = 25°C to 150°C 1500 V VGK Continuous ±30 V G VGK Transient ±40 V K Tab A ITSM TC = 25°C, 1μs 7.6 kA TC = 25°C, 10μs 3.5 kA PD TC = 25°C 695 W G = Gate K = Cathode A = Anode Tab = Anode TJ -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TL Maximum Lead Temperature for Soldering 300 °