MMIX1H60N150V1 SCR Spec

MMIX1H60N150V1 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 1500 V
   Non repetitive surge peak on-state current (I_TSM): 15500 A
   Junction to case thermal resistance (R_TH(j-c)): 0.39 K/W

 

MMIX1H60N150V1 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

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MMIX1H60N150V1 Spec

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Description

Preliminary Technical Information VDM = 1500V 1500V MOS Gated MMIX1H60N150V1 Thyristor A w/ Anti-Parallel Diode A G (Electrically Isolated Tab) G K K Isolated Tab Symbol Test Conditions Maximum Ratings VDM TJ = 25°C to 150°C 1500 V A VGK Continuous ±30 V VGK Transient ±40 V ITSM TC = 25°C, 1μs 32.0 kA K TC = 25°C, 10μs 11.8 kA PD TC = 25°C 446 W G TJ -55 ... +150 °C TJM 150 °C G = Gate K = Cathode Tstg -55 ... +150 °C A = Anode TL Maximum Lead Temperatur