MMJX1H40N150 Spec

MMJX1H40N150 ELECTRICAL SPECIFICATIONS

 

   Maximum repetitive peak and off-state voltage (V_DRM): 1600 V
   Maximum average on-state current (I_T(AVR)): 100 A
   Junction to case thermal resistance (R_TH(j-c)): 0.3 K/W
   Peak on-state voltage drop (V_TM): 1.62 V

 

MMJX1H40N150 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

MMJX1H40N150 Spec

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Description

Preliminary Technical Information VDM = 1500V 1500V MOS Gated MMJX1H40N150 Thyristor A A G (Electrically Isolated Tab) K G K Isolated Tab Symbol Test Conditions Maximum Ratings A VDM TJ = 25°C to 150°C 1500 V VGK Continuous ±30 V VGK Transient ±40 V K ITSM TC = 25°C, 1μs 15.5 kA TC = 25°C, 10μs 6.4 kA G PD TC = 25°C 320 W TJ -55 ... +150 °C TJM 150 °C G = Gate K = Cathode A = Anode Tstg -55 ... +150 °C TL Maximum Lead Temperature for Soldering 300 °C T