SKT1200-18E SCR Spec

SKT1200-18E ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 800 V
   Maximum average on-state current (I_T(AVR)): 130 A
   Maximum RMS on-state current (I_T(RMS)): 220 A
   Non repetitive surge peak on-state current (I_TSM): 3500 A
   Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..130 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.16 K/W
   Triggering gate voltage (V_GT): 3 V
   Peak on-state voltage drop (V_TM): 2.25 V
   Triggering gate current (I_GT): 200 mA
   Holding current (I_H): 150 mA

Package: TO‑209AB

 

SKT1200-18E Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

SKT1200-18E Spec

Page #1

Page #2

Description

SKT 1200/18 E Absolute Maximum Ratings Symbol Conditions Values Unit Chip IT(AV) Tc =85°C 1200 A sinus 180° Tc =100°C 840 A ITSM Tj =25°C 30000 A 10 ms Tj =125°C 25500 A i2t Tj =25°C 4500000 A²s 10 ms Tj =125°C 3251250 A²s VRSM 1800 V Capsule Thyristor VRRM 1800 V VDRM 1800 V (di/dt)cr Tj = 125 °C 125 A/µs (dv/dt)cr Tj = 125 °C 1000 V/µs Line Thyristor Tj -40 ... +125 °C SKT 1200/18 E Module Tstg -40 ... +130 °C Features Characteristics • Hermetic