2SB33 Specs and Replacement

Type Designator: 2SB33

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Emitter-Base Voltage |Veb|: 2 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 85 °C

Electrical Characteristics

Transition Frequency (ft): 0.4 MHz

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: TO1

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2SB33 datasheet

 0.1. Size:210K  inchange semiconductor

 2sb337.pdf pdf_icon

2SB33

isc Silicon PNP Power Transistors 2SB337 DESCRIPTION Low Collector Saturation Voltage- V = -0.29V(Typ.) @I = -4A CE(sat) C High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector... See More ⇒

Detailed specifications: 2SB322, 2SB323, 2SB324, 2SB325, 2SB326, 2SB327, 2SB328, 2SB329, SS8050, 2SB330, 2SB331, 2SB331H, 2SB332, 2SB332H, 2SB333, 2SB333H, 2SB334

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