2SB331H Specs and Replacement
Type Designator: 2SB331H
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 20 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Transition Frequency (ft): 0.125 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO36
2SB331H Substitution
- BJT ⓘ Cross-Reference Search
2SB331H datasheet
isc Silicon PNP Power Transistors 2SB337 DESCRIPTION Low Collector Saturation Voltage- V = -0.29V(Typ.) @I = -4A CE(sat) C High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector... See More ⇒
Detailed specifications: 2SB325, 2SB326, 2SB327, 2SB328, 2SB329, 2SB33, 2SB330, 2SB331, TIP42, 2SB332, 2SB332H, 2SB333, 2SB333H, 2SB334, 2SB334H, 2SB335, 2SB336
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