All Transistors. 2SB332 Datasheet

 

2SB332 Datasheet and Replacement


   Type Designator: 2SB332
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 40 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 100 °C
   Transition Frequency (ft): 0.125 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO36
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2SB332 Datasheet (PDF)

 9.1. Size:210K  inchange semiconductor
 2sb337.pdf pdf_icon

2SB332

isc Silicon PNP Power Transistors 2SB337DESCRIPTIONLow Collector Saturation Voltage-: V = -0.29V(Typ.) @I = -4ACE(sat) CHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: SDTC114EET1G | 850BT | 2N822 | 2SC1480 | 2N342B | NPS2713 | QM5HG-24

Keywords - 2SB332 transistor datasheet

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