All Transistors. 2SB337 Datasheet

 

2SB337 Datasheet and Replacement


   Type Designator: 2SB337
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 12 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 1 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 90 °C
   Transition Frequency (ft): 0.125 MHz
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO3
 

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2SB337 Datasheet (PDF)

 ..1. Size:210K  inchange semiconductor
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2SB337

isc Silicon PNP Power Transistors 2SB337DESCRIPTIONLow Collector Saturation Voltage-: V = -0.29V(Typ.) @I = -4ACE(sat) CHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector

Datasheet: 2SB332 , 2SB332H , 2SB333 , 2SB333H , 2SB334 , 2SB334H , 2SB335 , 2SB336 , BC556 , 2SB337H , 2SB338 , 2SB338H , 2SB339 , 2SB339H , 2SB34 , 2SB340 , 2SB340H .

History: D7ST4517 | BCW65B | NKT221 | 2SB355A | BD618 | KT898B-1 | NSP601

Keywords - 2SB337 transistor datasheet

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