All Transistors. 2SB338H Datasheet

 

2SB338H Datasheet and Replacement


   Type Designator: 2SB338H
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 12 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 90 °C
   Transition Frequency (ft): 0.125 MHz
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO3
 

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2SB338H Datasheet (PDF)

 9.1. Size:210K  inchange semiconductor
 2sb337.pdf pdf_icon

2SB338H

isc Silicon PNP Power Transistors 2SB337DESCRIPTIONLow Collector Saturation Voltage-: V = -0.29V(Typ.) @I = -4ACE(sat) CHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: AC540 | D880 | NSBC114YPDXV6T5G | FXT2907R | BDV49

Keywords - 2SB338H transistor datasheet

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