2SB371M Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SB371M

Material of Transistor: Ge

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.165 W

Maximum Collector-Base Voltage |Vcb|: 32 V

Maximum Collector-Emitter Voltage |Vce|: 24 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 75 °C

Transition Frequency (ft): 0.8 MHz

Forward Current Transfer Ratio (hFE), MIN: 125

Noise Figure, dB: -

Package: TO1

2SB371M Datasheet (PDF)

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