2SB403 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB403
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.24 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 32 V
Maximum Emitter-Base Voltage |Veb|: 20 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 85 °C
Transition Frequency (ft): 0.35 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO5
2SB403 Transistor Equivalent Substitute - Cross-Reference Search
2SB403 Datasheet (PDF)
9.1. Size:203K inchange semiconductor
2sb407.pdf
2sb407.pdf
isc Silicon PNP Power Transistor 2SB407DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -30V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -1.0V(Max.) @I = -6ACE(sat) CWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATI
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
