2SB405ST Specs and Replacement
Type Designator: 2SB405ST
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.72 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 85 °C
Electrical Characteristics
Transition Frequency (ft): 0.75 MHz
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO1
2SB405ST Substitution
- BJT ⓘ Cross-Reference Search
2SB405ST datasheet
isc Silicon PNP Power Transistor 2SB407 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -30V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -1.0V(Max.) @I = -6A CE(sat) C Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATI... See More ⇒
Detailed specifications: 2SB40, 2SB400, 2SB401, 2SB402, 2SB403, 2SB404, 2SB405, 2SB405K, D209L, 2SB406, 2SB407, 2SB408, 2SB409, 2SB41, 2SB410, 2SB410AF, 2SB410S
Keywords - 2SB405ST pdf specs
2SB405ST cross reference
2SB405ST equivalent finder
2SB405ST pdf lookup
2SB405ST substitution
2SB405ST replacement
