2SB405ST Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB405ST
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.72 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 85 °C
Transition Frequency (ft): 0.75 MHz
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO1
2SB405ST Transistor Equivalent Substitute - Cross-Reference Search
2SB405ST Datasheet (PDF)
9.1. Size:203K inchange semiconductor
2sb407.pdf
2sb407.pdf
isc Silicon PNP Power Transistor 2SB407DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -30V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -1.0V(Max.) @I = -6ACE(sat) CWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATI
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
