All Transistors. 2SB408 Datasheet

 

2SB408 Datasheet and Replacement


   Type Designator: 2SB408
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 85 °C
   Forward Current Transfer Ratio (hFE), MIN: 75
   Noise Figure, dB: -
   Package: TO1
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2SB408 Datasheet (PDF)

 9.1. Size:203K  inchange semiconductor
 2sb407.pdf pdf_icon

2SB408

isc Silicon PNP Power Transistor 2SB407DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -30V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -1.0V(Max.) @I = -6ACE(sat) CWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATI

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SB217 | RT3NDDM | BT2944 | CTP3551 | 2N5811 | BDT91F | 2N3860A

Keywords - 2SB408 transistor datasheet

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