2SB430 Specs and Replacement
Type Designator: 2SB430
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 85 °C
Electrical Characteristics
Transition Frequency (ft): 0.1 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO36
2SB430 Substitution
- BJT ⓘ Cross-Reference Search
2SB430 datasheet
2SB435 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SD235 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -40 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25 PC 25 W Junc... See More ⇒
isc Silicon PNP Power Transistor 2SB434 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -50V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -1.2V(Max.) @I = -3A CE(sat) C Complement to Type 2SD234 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE ... See More ⇒
isc Silicon PNP Power Transistor 2SB435 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -50V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -1.0V(Max.) @I = -1A CE(sat) C Complement to Type 2SD235 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE ... See More ⇒
Detailed specifications: 2SB426A, 2SB426B, 2SB426R, 2SB426Y, 2SB427, 2SB428, 2SB429, 2SB43, BD139, 2SB431, 2SB432, 2SB433, 2SB433F, 2SB434, 2SB434G, 2SB434O, 2SB434R
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