2SB437 Specs and Replacement
Type Designator: 2SB437
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.12 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.12 A
Max. Operating Junction Temperature (Tj): 85 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO1
2SB437 Substitution
- BJT ⓘ Cross-Reference Search
2SB437 datasheet
2SB435 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SD235 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -40 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25 PC 25 W Junc... See More ⇒
isc Silicon PNP Power Transistor 2SB434 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -50V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -1.2V(Max.) @I = -3A CE(sat) C Complement to Type 2SD234 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE ... See More ⇒
isc Silicon PNP Power Transistor 2SB435 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -50V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -1.0V(Max.) @I = -1A CE(sat) C Complement to Type 2SD235 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE ... See More ⇒
Detailed specifications: 2SB434R, 2SB434Y, 2SB435, 2SB435G, 2SB435O, 2SB435R, 2SB435Y, 2SB436, 13007, 2SB438, 2SB439, 2SB43A, 2SB44, 2SB440, 2SB441, 2SB442, 2SB442H
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