2SB439 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB439
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 75 °C
Transition Frequency (ft): 0.8 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO1
2SB439 Transistor Equivalent Substitute - Cross-Reference Search
2SB439 Datasheet (PDF)
2sb435.pdf
2SB435 PNP EPITAXIAL SILICON TRANSISTORLOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SD235ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -40 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25 PC 25 W Junc
2sb434.pdf
isc Silicon PNP Power Transistor 2SB434DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -50V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -1.2V(Max.) @I = -3ACE(sat) CComplement to Type 2SD234Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE
2sb435.pdf
isc Silicon PNP Power Transistor 2SB435DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -50V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -1.0V(Max.) @I = -1ACE(sat) CComplement to Type 2SD235Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
