2SB441 Specs and Replacement
Type Designator: 2SB441
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO3
2SB441 Substitution
- BJT ⓘ Cross-Reference Search
2SB441 datasheet
isc Silicon PNP Power Transistor 2SB449 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -50V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -0.7V(Max.) @I = -3A CE(sat) C Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier,switching and DC-DC converters appl... See More ⇒
Detailed specifications: 2SB435Y, 2SB436, 2SB437, 2SB438, 2SB439, 2SB43A, 2SB44, 2SB440, 13009, 2SB442, 2SB442H, 2SB443, 2SB443A, 2SB443B, 2SB444, 2SB444A, 2SB444B
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