2SB442H Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB442H
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 100 °C
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO3
2SB442H Transistor Equivalent Substitute - Cross-Reference Search
2SB442H Datasheet (PDF)
9.1. Size:203K inchange semiconductor
2sb449.pdf
2sb449.pdf
isc Silicon PNP Power Transistor 2SB449DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -50V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -0.7V(Max.) @I = -3ACE(sat) CWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier,switching and DC-DCconverters appl
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
