2SB442H Specs and Replacement

Type Designator: 2SB442H

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 160 V

Maximum Emitter-Base Voltage |Veb|: 1 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 100 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO3

 2SB442H Substitution

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2SB442H datasheet

 9.1. Size:203K  inchange semiconductor

 2sb449.pdf pdf_icon

2SB442H

isc Silicon PNP Power Transistor 2SB449 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -50V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -0.7V(Max.) @I = -3A CE(sat) C Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier,switching and DC-DC converters appl... See More ⇒

Detailed specifications: 2SB437, 2SB438, 2SB439, 2SB43A, 2SB44, 2SB440, 2SB441, 2SB442, A1941, 2SB443, 2SB443A, 2SB443B, 2SB444, 2SB444A, 2SB444B, 2SB444H, 2SB445

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